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12-Nti 4H-SiC wafer rau AR tsom iav

12-Nti 4H-SiC wafer rau AR tsom iav Featured Duab
  • 12-Nti 4H-SiC wafer rau AR tsom iav
  • 12-Nti 4H-SiC wafer rau AR tsom iav
  • 12-Nti 4H-SiC wafer rau AR tsom iav
  • 12-Nti 4H-SiC wafer rau AR tsom iav
  • 12-Nti 4H-SiC wafer rau AR tsom iav

Kev Piav Qhia Luv:

Lub12-nti conductive 4H-SiC (silicon carbide) substrateyog ib lub wafer semiconductor loj heev uas tsim los rau tiam tom ntejhigh-voltage, high-power, high-frequency, thiab high-temperaturekev tsim khoom siv hluav taws xob. Siv cov txiaj ntsig zoo ntawm SiC—xws lilub zog hluav taws xob tseem ceeb heev, qhov ceev ntawm cov electron drift siab heev, kev ua tau zoo ntawm cov cua sov, thiabkev ruaj khov tshuaj zoo heev—cov substrate no tau muab tso ua cov khoom siv tseem ceeb rau cov platforms fais fab siab heev thiab cov ntawv thov wafer loj tshiab.


Cov yam ntxwv

Daim duab qhia ntxaws ntxaws

12-Nti 4H-SiC wafer
12-Nti 4H-SiC wafer

Txheej txheem cej luam

Lub12-nti conductive 4H-SiC (silicon carbide) substrateyog ib lub wafer semiconductor loj heev uas tsim los rau tiam tom ntejhigh-voltage, high-power, high-frequency, thiab high-temperaturekev tsim khoom siv hluav taws xob. Siv cov txiaj ntsig zoo ntawm SiC—xws lilub zog hluav taws xob tseem ceeb heev, qhov ceev ntawm cov electron drift siab heev, kev ua tau zoo ntawm cov cua sov, thiabkev ruaj khov tshuaj zoo heev—cov substrate no tau muab tso ua cov khoom siv tseem ceeb rau cov platforms fais fab siab heev thiab cov ntawv thov wafer loj tshiab.

Txhawm rau daws cov kev xav tau thoob plaws hauv kev lag luam rautxo nqi thiab txhim kho kev tsim khoom, kev hloov pauv los ntawm cov ntsiab lus tseem ceeb6–8 nti SiC to SiC 12-ntiCov substrates tau lees paub dav dav tias yog txoj hauv kev tseem ceeb. Lub wafer 12-nti muab thaj chaw siv tau loj dua li cov hom ntawv me dua, ua rau muaj cov zis tuag ntau dua ib lub wafer, kev siv wafer zoo dua, thiab txo qhov sib piv ntawm ntug poob - yog li txhawb nqa kev tsim khoom tag nrho kev txhim kho tus nqi tsim khoom thoob plaws hauv cov khoom xa tuaj.

Kev Loj Hlob Crystal thiab Wafer Fabrication Route

 

Lub substrate 12-nti conductive 4H-SiC no yog tsim los ntawm kev ua tiav cov txheej txheem saw hlau.kev nthuav dav ntawm noob, kev loj hlob ntawm ib lub siv lead ua ke, kev ua kom nyias nyias, thiab kev txhuam kom du, ua raws li cov qauv kev tsim khoom semiconductor:

 

  • Kev nthuav dav noob los ntawm Physical Vapor Transport (PVT):
    Ib lub 12-nti4H-SiC noob siv lead uatau txais los ntawm kev nthuav dav txoj kab uas hla siv txoj kev PVT, ua rau muaj kev loj hlob ntawm 12-nti conductive 4H-SiC boules.

  • Kev loj hlob ntawm cov khoom siv hluav taws xob 4H-SiC ib leeg siv lead ua ke:
    Ua tau zoon⁺ 4H-SiCkev loj hlob ntawm ib qho siv lead ua ke yog ua tiav los ntawm kev qhia nitrogen rau hauv qhov chaw loj hlob kom muab kev tswj hwm tus neeg pub dawb doping.

  • Kev tsim cov wafer (kev ua cov txheej txheem semiconductor txheem):
    Tom qab boule shaping, wafers yog tsim los ntawmkev txiav laser, ua raws liKev ua kom nyias nyias, kev txhuam kom du (suav nrog kev ua tiav CMP), thiab kev ntxuav.
    Lub thickness ntawm lub substrate resulting yog560 μm.

 

Txoj kev sib koom ua ke no yog tsim los txhawb kev loj hlob ruaj khov ntawm txoj kab uas hla loj heev thaum tswj hwm kev ncaj ncees ntawm crystallographic thiab cov khoom hluav taws xob sib xws.

 

sic wafer 9

 

Yuav kom paub tseeb tias muaj kev ntsuam xyuas zoo, lub substrate no tau siv cov cuab yeej ua ke ntawm cov qauv, kho qhov muag, hluav taws xob, thiab tshuaj xyuas qhov tsis zoo:

 

  • Raman spectroscopy (kev kos duab cheeb tsam):kev txheeb xyuas ntawm polytype uniformity hla lub wafer

  • Kev siv tshuab tsom iav uas ua haujlwm tau tag nrho (wafer mapping):kev tshawb pom thiab kev soj ntsuam txog cov micropipes

  • Kev ntsuas tsis sib cuag resistivity (wafer mapping):kev faib tawm resistivity hla ntau qhov chaw ntsuas

  • Kev pom kev zoo ntawm X-ray diffraction (HRXRD):kev ntsuam xyuas qhov zoo ntawm crystalline los ntawm kev ntsuas rocking curve

  • Kev tshuaj xyuas qhov tawg (tom qab xaiv cov etching):kev ntsuam xyuas qhov ceev thiab morphology ntawm qhov dislocation (nrog rau kev tsom mus rau qhov screw dislocations)

 

sic wafer 10

Cov Txiaj Ntsig Tseem Ceeb ntawm Kev Ua Tau Zoo (Tus Neeg Sawv Cev)

Cov txiaj ntsig ntawm kev piav qhia qhia tau hais tias lub substrate 12-nti conductive 4H-SiC qhia tau tias cov khoom siv zoo heev thoob plaws cov yam ntxwv tseem ceeb:

(1) Kev huv thiab kev sib npaug ntawm Polytype

  • Daim ntawv qhia txog thaj chaw Raman qhia100% 4H-SiC polytype kev pab them nqihla lub substrate.

  • Tsis muaj kev suav nrog lwm cov polytypes (piv txwv li, 6H lossis 15R) raug kuaj pom, qhia tias kev tswj hwm polytype zoo heev ntawm qhov ntsuas 12-nti.

(2) Qhov ceev ntawm cov kav dej me me (MPD)

  • Wafer-scale microscopy mapping qhia txog ib qhoQhov ceev ntawm cov kav dej me me < 0.01 cm⁻², qhia txog kev tswj hwm zoo ntawm pawg khoom siv no uas txwv tsis pub muaj qhov tsis zoo.

(3) Kev tiv taus hluav taws xob thiab kev sib npaug

  • Kev ntsuas tsis sib cuag (361-point ntsuas) qhia tau hais tias:

    • Qhov ntau yam tsis kam:20.5–23.6 mΩ·cm

    • Qhov nruab nrab tsis kam:22.8 mΩ·cm

    • Kev tsis sib xws:< 2%
      Cov txiaj ntsig no qhia tau tias muaj kev sib xyaw ua ke ntawm cov dopant zoo thiab kev sib npaug ntawm cov hluav taws xob wafer zoo.

(4) Qhov zoo ntawm cov khoom siv lead ua (HRXRD)

  • Kev ntsuas kab nkhaus HRXRD ntawm qhov chaw(004) kev xav txog, coj ntawmtsib lub ntsiab lusraws li qhov kev taw qhia ntawm lub wafer txoj kab uas hla, qhia:

    • Ib lub ncov, ze li ntawm qhov sib npaug tsis muaj ntau lub ncov, qhia tias tsis muaj cov yam ntxwv ciam teb ntawm lub kaum sab xis qis.

    • Qhov nruab nrab ntawm FWHM:20.8 arcsec (″), qhia txog qhov zoo ntawm crystalline.

(5) Qhov ceev ntawm cov ntsia hlau tawg (TSD)

  • Tom qab xaiv etching thiab automated scanning, covqhov ceev ntawm qhov ntsia hlau dislocationyog ntsuas ntawm2 cm⁻², qhia txog TSD qis ntawm qhov ntsuas 12-nti.

Xaus lus los ntawm cov txiaj ntsig saum toj no:
Lub substrate qhia tau hais tiaszoo heev 4H polytype purity, ultra-low micropipe ceev, ruaj khov thiab sib xws qis resistivity, muaj zog crystalline zoo, thiab qis screw dislocation ceev, txhawb nqa nws qhov kev tsim khoom siv siab heev.

Tus nqi khoom thiab qhov zoo

  • Ua kom muaj kev hloov pauv ntawm 12-nti SiC kev tsim khoom
    Muab lub platform substrate zoo uas phim nrog txoj kev lag luam rau kev tsim khoom wafer 12-nti SiC.

  • Qhov tsis zoo uas tsis zoo rau kev txhim kho cov khoom siv thiab kev ntseeg tau
    Qhov ceev ntawm cov kav dej me me thiab qhov ceev ntawm cov ntsia hlau tsis sib haum pab txo cov txheej txheem poob qis thiab cov txheej txheem parametric.

  • Kev sib npaug zoo heev ntawm hluav taws xob rau kev ruaj khov ntawm cov txheej txheem
    Kev faib tawm ntawm cov khoom siv resistivity nruj txhawb kev txhim kho wafer-rau-wafer thiab hauv-wafer device sib xws.

  • Cov khoom siv crystalline zoo txhawb nqa epitaxy thiab cov khoom siv ua tiav
    Cov txiaj ntsig HRXRD thiab qhov tsis muaj cov cim ciam teb qis qis qhia txog cov khoom siv zoo rau kev loj hlob epitaxial thiab kev tsim khoom siv.

 

Cov Ntawv Thov

Lub substrate 12-nti conductive 4H-SiC siv tau rau:

  • Cov khoom siv hluav taws xob SiC:MOSFETs, Schottky barrier diodes (SBD), thiab cov qauv zoo sib xws

  • Cov tsheb fais fab:cov inverters traction tseem ceeb, cov chargers onboard (OBC), thiab cov hloov DC-DC

  • Lub zog rov ua dua tshiab & lub zog hluav taws xob:cov photovoltaic inverters, cov tshuab khaws cia hluav taws xob, thiab cov modules ntse grid

  • Kev lag luam hluav taws xob:cov khoom siv fais fab ua haujlwm siab, cov tsav tsheb, thiab cov hloov pauv hluav taws xob siab

  • Cov kev xav tau ntawm cov wafer loj hauv cheeb tsam tshiab:Kev ntim khoom siab heev thiab lwm yam xwm txheej tsim khoom semiconductor sib xws 12-nti

 

Cov Lus Nug Feem Ntau - 12-Nti Conductive 4H-SiC Substrate

Q1. Cov khoom no yog hom SiC substrate twg?

A:
Cov khoom no yog ib qho12-nti conductive (n⁺-hom) 4H-SiC ib leeg-siv lead ua substrate, loj hlob los ntawm Physical Vapor Transport (PVT) txoj kev thiab ua tiav siv cov txheej txheem semiconductor wafering txheem.

Q2. Vim li cas 4H-SiC thiaj raug xaiv ua polytype?

A:
4H-SiC muaj kev sib xyaw ua ke zoo tshaj plaws ntawmmuaj kev txav mus los ntawm cov hluav taws xob siab, bandgap dav, thaj chaw tawg siab, thiab kev ua kom sov tau zoontawm cov polytypes SiC uas muaj feem cuam tshuam rau kev lag luam. Nws yog cov polytype tseem ceeb uas siv raucov khoom siv SiC uas muaj zog thiab muaj zog heev, xws li MOSFETs thiab Schottky diodes.

Q3. Cov txiaj ntsig ntawm kev hloov ntawm 8-nti mus rau 12-nti SiC substrates yog dab tsi?

A:
Lub wafer SiC 12-nti muab:

  • Tseem ceeb heevthaj chaw loj dua uas siv tau

  • Cov zis tuag ntau dua ib lub wafer

  • Qhov piv ntawm kev poob ntug qis dua

  • Kev sib raug zoo dua nrogCov kab tsim khoom semiconductor 12-nti siab heev

Cov yam no pab ncaj qha rautus nqi qis dua rau ib lub cuab yeejthiab kev tsim khoom ntau dua.

Txog Peb

XKH muaj kev txawj ntse hauv kev tsim khoom, kev tsim khoom, thiab kev muag khoom ntawm cov iav kho qhov muag tshwj xeeb thiab cov khoom siv siv lead ua tshiab. Peb cov khoom siv rau cov khoom siv hluav taws xob kho qhov muag, cov khoom siv hluav taws xob rau cov neeg siv khoom, thiab cov tub rog. Peb muab cov khoom siv kho qhov muag Sapphire, cov ntaub thaiv lub xov tooj ntawm tes, Ceramics, LT, Silicon Carbide SIC, Quartz, thiab semiconductor crystal wafers. Nrog kev txawj ntse thiab cov cuab yeej siv tshiab, peb ua tau zoo hauv kev ua cov khoom tsis yog tus qauv, lub hom phiaj yog ua lub tuam txhab ua khoom siv hluav taws xob kho qhov muag zoo tshaj plaws.

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