12 Nti SiC substrate Txoj kab uas hla 300 hli Thickness 750μm 4H-N Hom tuaj yeem hloov kho

12 Nti SiC substrate Txoj kab uas hla 300mm Thickness 750μm 4H-N Hom tuaj yeem hloov kho tau Featured Duab

Kev Piav Qhia Luv:

Thaum lub sijhawm tseem ceeb hauv kev lag luam semiconductor hloov mus rau cov kev daws teeb meem zoo dua thiab me me, qhov tshwm sim ntawm 12-nti SiC substrate (12-nti silicon carbide substrate) tau hloov pauv qhov chaw tseem ceeb. Piv rau cov lus qhia ib txwm muaj 6-nti thiab 8-nti, qhov zoo ntawm qhov loj ntawm 12-nti substrate ua rau muaj ntau cov chips tsim tawm ib wafer ntau dua plaub npaug. Tsis tas li ntawd, tus nqi ib chav ntawm 12-nti SiC substrate raug txo los ntawm 35-40% piv rau cov substrates 8-nti ib txwm muaj, uas yog qhov tseem ceeb rau kev siv dav dav ntawm cov khoom kawg.
Los ntawm kev siv peb cov thev naus laus zis loj hlob ntawm kev thauj mus los ntawm cov pa, peb tau ua tiav kev tswj hwm kev sib cais ntawm cov khoom siv 12-nti uas ua tau zoo tshaj plaws hauv kev lag luam, muab lub hauv paus khoom siv zoo tshaj plaws rau kev tsim khoom siv tom ntej. Qhov kev nce qib no yog qhov tseem ceeb tshwj xeeb thaum muaj kev tsis txaus ntawm cov chips thoob ntiaj teb tam sim no.

Cov khoom siv fais fab tseem ceeb hauv kev siv txhua hnub—xws li EV chaw them ceev thiab 5G chaw nres tsheb—tab tom siv cov khoom loj no ntau zuj zus. Tshwj xeeb tshaj yog nyob rau hauv qhov kub siab, hluav taws xob ntau, thiab lwm yam chaw ua haujlwm hnyav, 12-nti SiC substrate qhia tau tias muaj kev ruaj khov zoo dua piv rau cov khoom siv silicon.

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Cov yam ntxwv

Cov kev tsis sib xws

12 nti Silicon Carbide (SiC) Cov Khoom Siv Substrate
Qib		ZeroMPD Kev Tsim Khoom Qib (Qib Z)	Kev Tsim Khoom Txheem Qib (Qib P)		Qib Dummy (Qib D)
Txoj kab uas hla		3 0 0 hli ~ 1305 hli
Qhov tuab	4H-N	750μm ± 15 μm	750μm ± 25 μm
	4H-SI	750μm ± 15 μm	750μm ± 25 μm
Kev Taw Qhia Wafer		Tawm ntawm txoj kab: 4.0° mus rau <1120 >±0.5° rau 4H-N, Ntawm txoj kab: <0001>±0.5° rau 4H-SI
Qhov Ceev ntawm Micropipe	4H-N	≤0.4cm-2	≤4cm-2		≤25cm-2
	4H-SI	≤5cm-2	≤10cm-2		≤25cm-2
Kev tiv taus	4H-N	0.015~0.024 Ω·cm			0.015~0.028 Ω·cm
	4H-SI	≥1E10 Ω·cm			≥1E5 Ω·cm
Kev Taw Qhia Tiaj Tus Thawj Coj		{10-10} ±5.0°
Qhov Ntev Tiaj Tus Thawj	4H-N	Tsis muaj
	4H-SI	Qhov Notch
Kev Tshem Tawm Ntug		3 hli
LTV/TTV/Hneev nti /Warp		≤5μm / ≤15μm / ≤35μm / ≤55μm			≤ 5μm / ≤15μm / ≤35 □ μm / ≤55 □ μm
Kev ntxhib		Polish Ra≤1 nm
		CMP Ra≤0.2 nm			Ra≤0.5 nm
Cov Ntxaij Ntug Los Ntawm Lub Teeb Ci Siab Hex Phaj Los Ntawm Lub Teeb Ci Siab Cov Cheeb Tsam Polytype Los Ntawm Lub Teeb Ci Siab Cov pa roj carbon uas pom tau Cov khawb ntawm cov nplaim silicon los ntawm lub teeb ci ntsa iab		Tsis muaj dab tsi Thaj chaw sib sau ua ke ≤0.05% Tsis muaj dab tsi Thaj chaw sib sau ua ke ≤0.05% Tsis muaj dab tsi			Qhov ntev tag nrho ≤ 20 hli, ib qho ntev ≤ 2 hli Thaj chaw sib sau ua ke ≤0.1% Thaj chaw sib sau ua ke ≤ 3% Thaj chaw sib sau ua ke ≤3% Tag nrho ntev ≤1 × wafer txoj kab uas hla
Ntug Chips Los Ntawm Lub Teeb Ci Siab		Tsis pub ≥0.2 hli dav thiab tob			7 tso cai, ≤1 hli txhua
(TSD) Kev sib txhuam ntawm cov ntsia hlau		≤500 cm-2		Tsis muaj
(BPD) Kev puas tsuaj ntawm lub hauv paus		≤1000 cm-2		Tsis muaj
Kev Ua Rau Silicon Nto Los Ntawm Lub Teeb Ci Siab		Tsis muaj dab tsi
Ntim Khoom		Multi-wafer Cassette Los Yog Ib Lub Thawv Wafer
Cov Lus Cim:
1 Cov kev txwv tsis zoo siv rau tag nrho cov wafer nto tshwj tsis yog thaj chaw tsis suav nrog ntug. 2 Cov khawb yuav tsum tau kuaj xyuas rau ntawm Si lub ntsej muag xwb. 3 Cov ntaub ntawv dislocation tsuas yog los ntawm KOH etched wafers.

Cov Nta Tseem Ceeb

1. Peev Xwm Tsim Khoom thiab Qhov Zoo ntawm Tus Nqi: Kev tsim khoom ntau ntawm 12-nti SiC substrate (12-nti silicon carbide substrate) yog lub sijhawm tshiab hauv kev tsim khoom semiconductor. Tus naj npawb ntawm cov chips tau los ntawm ib lub wafer ncav cuag 2.25 npaug ntawm 8-nti substrates, ncaj qha tsav tsheb dhia hauv kev ua haujlwm zoo. Cov lus tawm tswv yim ntawm cov neeg siv khoom qhia tias kev siv 12-nti substrates tau txo lawv cov nqi tsim khoom ntawm lub zog module los ntawm 28%, tsim kom muaj kev sib tw zoo hauv kev ua lag luam sib tw hnyav.
2. Cov Khoom Siv Zoo Tshaj Plaws: Lub 12-nti SiC substrate tau txais txhua qhov zoo ntawm cov khoom siv silicon carbide - nws cov thermal conductivity yog 3 npaug ntawm silicon, thaum nws lub zog tawg mus txog 10 npaug ntawm silicon. Cov yam ntxwv no ua rau cov khoom siv raws li 12-nti substrates ua haujlwm ruaj khov hauv qhov chaw kub siab tshaj 200 ° C, ua rau lawv tsim nyog rau cov ntawv thov xav tau xws li tsheb fais fab.
3. Kev Siv Tshuab Kho Qhov Chaw: Peb tau tsim ib txoj kev tshiab los siv tshuaj lom neeg kho tshuab (CMP) tshwj xeeb rau 12-nti SiC substrates, ua tiav qhov tiaj tiaj ntawm qhov chaw atomic (Ra<0.15nm). Qhov kev tshawb pom no daws tau qhov teeb meem thoob ntiaj teb ntawm kev kho qhov chaw ntawm silicon carbide wafer loj, tshem tawm cov teeb meem rau kev loj hlob zoo ntawm epitaxial.
4. Kev Ua Haujlwm Tswj Kub: Hauv kev siv tiag tiag, 12-nti SiC substrates qhia tau tias muaj peev xwm ua kom sov zoo kawg nkaus. Cov ntaub ntawv sim qhia tau tias nyob rau hauv tib lub zog ceev, cov khoom siv siv 12-nti substrates ua haujlwm ntawm qhov kub 40-50 ° C qis dua li cov khoom siv silicon, ua rau lub neej ua haujlwm ntawm cov khoom siv ntev dua.

Cov Ntawv Thov Tseem Ceeb

1. Lub Tsheb Muaj Zog Tshiab: Lub 12-nti SiC substrate (12-nti silicon carbide substrate) tab tom hloov pauv lub zog ntawm lub tsheb fais fab. Txij li cov chargers onboard (OBC) mus rau cov inverters tsav tsheb tseem ceeb thiab cov txheej txheem tswj roj teeb, kev txhim kho kev ua haujlwm uas 12-nti substrates coj los ua rau lub tsheb khiav tau ntau dua 5-8%. Cov ntawv ceeb toom los ntawm lub tuam txhab tsim tsheb loj qhia tias kev siv peb cov 12-nti substrates txo qhov poob zog hauv lawv lub kaw lus them ceev ceev los ntawm 62%.
2. Kev Siv Hluav Taws Xob Rov Ua Dua Tshiab: Hauv cov chaw tsim hluav taws xob photovoltaic, cov inverters raws li 12-nti SiC substrates tsis yog tsuas yog muaj cov yam ntxwv me me xwb tab sis kuj ua tiav kev hloov pauv zoo tshaj 99%. Tshwj xeeb tshaj yog nyob rau hauv cov xwm txheej tsim hluav taws xob faib tawm, qhov kev ua haujlwm siab no txhais tau tias kev txuag txhua xyoo ntawm ntau pua txhiab yuan hauv kev poob hluav taws xob rau cov neeg ua haujlwm.
3. Kev Siv Tshuab Hauv Kev Lag Luam: Cov hloov pauv zaus siv 12-nti substrates qhia tau tias muaj kev ua tau zoo heev hauv cov neeg hlau lag luam, cov cuab yeej tshuab CNC, thiab lwm yam khoom siv. Lawv cov yam ntxwv hloov pauv zaus siab txhim kho qhov ceev ntawm lub cev muaj zog los ntawm 30% thaum txo cov kev cuam tshuam electromagnetic rau ib feem peb ntawm cov kev daws teeb meem ib txwm muaj.
4. Kev Tsim Kho Tshiab rau Cov Khoom Siv Hluav Taws Xob: Cov thev naus laus zis them ceev rau xov tooj ntse tiam tom ntej tau pib siv cov khoom siv SiC 12-nti. Nws tau kwv yees tias cov khoom them ceev tshaj 65W yuav hloov mus rau cov kev daws teeb meem silicon carbide, nrog rau cov khoom siv 12-nti tawm los ua qhov kev xaiv zoo tshaj plaws rau kev ua haujlwm pheej yig.

XKH Cov Kev Pabcuam Tshwj Xeeb rau 12-nti SiC Substrate

Yuav kom ua tau raws li cov kev cai tshwj xeeb rau 12-nti SiC substrates (12-nti silicon carbide substrates), XKH muab kev pabcuam txhawb nqa tag nrho:
1. Kev Kho Kom Tuab:
Peb muab cov khoom siv 12-nti hauv ntau yam tuab xws li 725μm kom tau raws li cov kev xav tau ntawm daim ntawv thov sib txawv.
2. Kev ntsuas tshuaj doping:
Peb lub chaw tsim khoom txhawb nqa ntau hom kev ua hluav taws xob suav nrog n-hom thiab p-hom substrates, nrog rau kev tswj hwm qhov tsis kam ntawm 0.01-0.02Ω·cm.
3. Kev Pab Cuam Xeem:
Nrog cov khoom siv kuaj wafer tiav, peb muab cov ntawv qhia kev tshuaj xyuas tag nrho.
XKH nkag siab tias txhua tus neeg siv khoom muaj cov kev xav tau tshwj xeeb rau 12-nti SiC substrates. Yog li ntawd, peb muab cov qauv kev koom tes ua lag luam uas yooj ywm los muab cov kev daws teeb meem sib tw tshaj plaws, txawm tias rau:
· Cov qauv R&D
· Kev yuav khoom ntau lawm
Peb cov kev pabcuam tshwj xeeb ua kom peb tuaj yeem ua tau raws li koj cov kev xav tau tshwj xeeb thiab kev tsim khoom rau 12-nti SiC substrates.