4H-semi HPSI 2 nti SiC substrate wafer Kev Tsim Khoom Dummy Research qib

Silicon carbide substrate feem ntau muab faib ua hom conductive thiab semi-insulating, conductive silicon carbide substrate rau n-hom substrate feem ntau yog siv rau epitaxial GaN-based LED thiab lwm yam khoom siv optoelectronic, SiC-based fais fab hluav taws xob, thiab lwm yam, thiab semi-insulating SiC silicon carbide substrate feem ntau yog siv rau epitaxial manufacture ntawm GaN high-power radio frequency devices. Tsis tas li ntawd, high-purity semi-insulation HPSI thiab SI semi-insulation txawv, high-purity semi-insulation carrier concentration ntawm 3.5 * 1013 ~ 8 * 1015 / cm3, nrog rau kev txav mus los ntawm electron siab; semi-insulation yog cov ntaub ntawv tiv taus siab, resistivity siab heev, feem ntau siv rau microwave device substrates, tsis-conductive.

Semi-insulating Silicon Carbide substrate ntawv SiC wafer

Cov qauv siv lead ua SiC txiav txim siab nws lub cev, piv rau Si thiab GaAs, SiC muaj cov khoom siv lub cev; qhov dav txwv tsis pub siv yog loj, ze li 3 npaug ntawm Si, kom ntseeg tau tias lub cuab yeej ua haujlwm ntawm qhov kub siab nyob rau hauv kev ntseeg siab mus sij hawm ntev; lub zog tawg teb siab, yog 10 npaug ntawm Si, kom ntseeg tau tias lub cuab yeej voltage muaj peev xwm, txhim kho lub cuab yeej voltage; saturation electron rate loj, yog 2 npaug ntawm Si, kom nce lub cuab yeej zaus thiab lub zog ceev; thermal conductivity siab, ntau dua Si, thermal conductivity siab, thermal conductivity siab, thermal conductivity siab, thermal conductivity siab, ntau dua Si, thermal conductivity siab, thermal conductivity siab. High thermal conductivity, ntau dua 3 npaug ntawm Si, ua rau lub cuab yeej dissipation muaj peev xwm thiab ua kom lub cuab yeej me me.