4H-SiC Epitaxial Wafers rau Ultra-High Voltage MOSFETs (100-500 μm, 6 nti)

Lus piav qhia luv luv:

Kev loj hlob sai ntawm cov tsheb hluav taws xob, cov phiajcim ntse, cov tshuab hluav taws xob tauj dua tshiab, thiab cov cuab yeej siv hluav taws xob muaj zog tau tsim kom muaj kev xav tau ceev rau cov khoom siv hluav taws xob uas muaj peev xwm tuav cov hluav taws xob ntau dua, muaj zog dua, thiab ua haujlwm zoo dua. Ntawm qhov dav bandgap semiconductors,silicon carbide (SiC)stands rau nws dav bandgap, siab thermal conductivity, thiab superior tseem ceeb hluav taws xob teb zog.

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Product Overview

Peb4H-SiC epitaxial wafersyog engineered tshwj xeeb rauUltra-high voltage MOSFET daim ntawv thov. Nrog epitaxial txheej los ntawm100 μm rau 500 μm on 6-nti (150 mm) substrates, cov wafers xa cov cheeb tsam txuas ntxiv uas yuav tsum tau muaj rau kV-chav kawm cov khoom siv thaum tswj hwm qhov tshwj xeeb siv lead ua zoo thiab scalability. Standard thicknesses muaj xws li 100 μm, 200 μm, thiab 300 μm, nrog customization muaj.

Epitaxial Txheej Thickness

Cov txheej epitaxial plays lub luag haujlwm txiav txim siab MOSFET kev ua tau zoo, tshwj xeeb tshaj yog qhov sib npaug ntawmtawg voltagethiabntawm-tiv taus.

100-200 hli: Optimized rau nruab nrab-rau-siab voltage MOSFETs, muab ib tug zoo heev tshuav nyiaj li cas ntawm conduction efficiency thiab thaiv lub zog.
200-500 hli: Haum rau cov khoom siv hluav taws xob ultra-high voltage (10 kV +), ua rau thaj tsam drift ntev rau cov yam ntxwv ua kom muaj zog.

Nyob rau hauv tag nrho cov ntau yam,thickness uniformity yog tswj nyob rau hauv ± 2%, kom ntseeg tau qhov sib xws ntawm wafer mus rau wafer thiab batch rau batch. Qhov kev hloov pauv no tso cai rau cov neeg tsim qauv tsim kho cov cuab yeej ua tau zoo rau lawv cov hom phiaj voltage chav kawm thaum tswj kev rov tsim dua hauv kev tsim khoom loj.

Kev tsim khoom

Peb cov wafers yog fabricated sivLub xeev-of-the-art CVD (Chemical Vapor Deposition) epitaxy, uas ua rau muaj kev tswj xyuas meej ntawm cov tuab, doping, thiab crystalline zoo, txawm tias cov txheej tuab heev.

CVD Epitaxy- High-purity gases thiab optimized tej yam kev mob xyuas kom meej qhov chaw du thiab tsawg defect ntom.
Thick Layer Loj hlob- Cov txheej txheem txheej txheem ua zaub mov tso cai rau epitaxial thickness mus txog500 mnrog zoo heev uniformity.
Doping Control- Adjustable concentration ntawm1 × 10¹⁴ - 1 × 10¹⁶ cm⁻³, nrog uniformity zoo dua ± 5%.
Kev npaj nto- Cov wafers raugCMP polishingthiab kev soj ntsuam nruj, ua kom muaj kev sib raug zoo nrog cov txheej txheem siab heev xws li rooj vag oxidation, photolithography, thiab metallization.

Qhov Zoo Tshaj Plaws

Ultra-High Voltage Muaj peev xwm- Thick epitaxial txheej (100-500 μm) txhawb kV-chav kawm MOSFET tsim.
Exceptional Crystal Quality- Tsawg dislocation thiab basal dav hlau tsis xws luag kom ntseeg tau tias muaj kev cia siab thiab txo qis.
6-Inch Loj Substrates- Kev them nyiaj yug rau cov khoom ntim siab, txo tus nqi ntawm ib lub cuab yeej, thiab fab kev sib raug zoo.
Superior Thermal Properties- High thermal conductivity thiab dav bandgap pab kom ua haujlwm tau zoo ntawm lub zog siab thiab kub.
Customizable Parameters- Thickness, doping, orientation, thiab nto tiav tuaj yeem ua raws li cov kev xav tau tshwj xeeb.

Hom Specifications

Parameter	Specification
Hom conductivity	N-hom (Nitrogen-doped)
Kev tiv thaiv	Ib qho
Off-Axis Lub kaum sab xis	4 ° ± 0.5 ° (mus rau [11-20])
Crystal Orientation	(0001) Sib
Thickness	200-300 μm (customizable 100-500 μm)
Nto tiav	Pem hauv ntej: CMP polished (epi-npaj) Rov qab: lapped los yog polished
TTV	≤ 10 μm
Bow/Warp	≤ 20 hli

Cov cheeb tsam thov

4H-SiC epitaxial wafers yog qhov tsim nyog rauMOSFETs nyob rau hauv ultra-high voltage systems, suav nrog:

Hluav taws xob tsheb traction inverters & high-voltage charging modules
Ntse daim phiaj kis tau tus mob & cov khoom siv faib khoom
Lub zog tauj dua tshiab inverters (hnub ci, cua, cia)
High-power industrial khoom siv & switching systems

FAQ

Q1: Dab tsi yog hom conductivity?
A1: N-hom, doped nrog nitrogen - tus qauv kev lag luam rau MOSFETs thiab lwm yam khoom siv fais fab.

Q2: Dab tsi epitaxial thicknesses muaj?
A2: 100-500 μm, nrog cov qauv kev xaiv ntawm 100 μm, 200 μm, thiab 300 μm. Kev cai thicknesses muaj nyob rau ntawm kev thov.

Q3: Dab tsi yog qhov wafer orientation thiab off-axis kaum?
A3: (0001) Si-face, nrog 4 ° ± 0.5 ° tawm-axis mus rau [11-20] kev taw qhia.

Txog Peb

XKH tshwj xeeb hauv kev tsim cov thev naus laus zis, tsim khoom, thiab muag cov iav tshwj xeeb kho qhov muag thiab cov ntaub ntawv siv lead ua tshiab. Peb cov khoom siv kho qhov muag khoom siv hluav taws xob, khoom siv hluav taws xob, thiab tub rog. Peb muab Sapphire optical Cheebtsam, xov tooj ntawm tes lens npog, Ceramics, LT, Silicon Carbide SIC, Quartz, thiab semiconductor siv lead ua wafers. Nrog cov kws tshaj lij thiab cov cuab yeej siv niaj hnub, peb ua tau zoo hauv kev ua cov khoom lag luam uas tsis yog tus qauv, aiming los ua ib qho khoom siv optoelectronic high-tech enterprise.