4H-SiC Epitaxial Wafers rau Ultra-High Voltage MOSFETs (100–500 μm, 6 nti)

Kev Piav Qhia Luv:

Kev loj hlob sai ntawm cov tsheb fais fab, cov ntse grids, cov tshuab hluav taws xob rov ua dua tshiab, thiab cov khoom siv hluav taws xob siab tau tsim kom muaj kev xav tau ceev rau cov khoom siv semiconductor uas muaj peev xwm tswj tau cov hluav taws xob siab dua, cov hluav taws xob ntau dua, thiab kev ua haujlwm zoo dua. Ntawm cov semiconductors dav dav bandgap,silicon carbide (SiC)sawv tawm rau nws qhov dav bandgap, siab thermal conductivity, thiab superior critical electric field strength.

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Cov yam ntxwv

Daim duab qhia ntxaws ntxaws

Txheej Txheem Cej Luam Khoom

Peb li4H-SiC epitaxial wafersyog tsim tshwj xeeb rauCov ntawv thov MOSFET ultra-high voltageNrog cov khaubncaws sab nraud povtseg epitaxial xws li100 μm txog 500 μm on Cov khoom siv 6-nti (150 hli), cov wafers no xa cov cheeb tsam drift ntev uas xav tau rau kV-chav kawm li thaum tswj hwm qhov zoo ntawm crystal thiab scalability. Cov thickness txheem suav nrog 100 μm, 200 μm, thiab 300 μm, nrog rau kev hloov kho tau.

Epitaxial Txheej Thickness

Cov txheej epitaxial ua lub luag haujlwm tseem ceeb hauv kev txiav txim siab MOSFET kev ua tau zoo, tshwj xeeb tshaj yog qhov sib npaug ntawmlub zog hluav taws xob tawgthiabon-resistance.

100–200 μm: Zoo rau cov MOSFETs hluav taws xob nruab nrab mus rau siab, muab kev sib npaug zoo heev ntawm kev ua haujlwm zoo thiab lub zog thaiv.
200–500 μm: Haum rau cov khoom siv hluav taws xob siab heev (10 kV+), ua rau thaj chaw ntev ntev rau cov yam ntxwv tawg.

Thoob plaws tag nrho cov ntau yam,Kev sib npaug ntawm cov tuab yog tswj tau hauv ± 2%, xyuas kom meej tias muaj kev sib xws los ntawm wafer mus rau wafer thiab batch mus rau batch. Qhov kev ywj pheej no tso cai rau cov neeg tsim qauv kho kom zoo dua qhov kev ua tau zoo ntawm cov cuab yeej rau lawv cov chav kawm voltage thaum tswj hwm qhov rov ua dua hauv kev tsim khoom loj.

Cov Txheej Txheem Tsim Khoom

Peb cov wafers yog tsim los ntawm kev sivCov txheej txheem tshiab CVD (Chemical Vapor Deposition) epitaxy, uas ua rau muaj kev tswj hwm qhov tuab, doping, thiab qhov zoo ntawm crystalline, txawm tias rau cov khaubncaws sab nraud povtseg tuab heev.

CVD Epitaxy- Cov pa roj uas muaj cov khoom huv si thiab cov xwm txheej zoo tshaj plaws ua kom cov nplaim du thiab cov qhov tsis zoo tsawg.
Kev Loj Hlob Tuab Txheej- Cov txheej txheem ua zaub mov tshwj xeeb tso cai rau epitaxial tuab txog li500 μmnrog kev sib npaug zoo heev.
Kev Tswj Xyuas Doping- Kev ntsuas qhov sib txawv ntawm1 × 10¹⁴ – 1 × 10¹⁶ cm⁻³, nrog kev sib npaug zoo dua ± 5%.
Kev Npaj Nto- Cov Wafers raug kev txom nyemKev txhuam CMPthiab kev tshuaj xyuas nruj, xyuas kom meej tias muaj kev sib raug zoo nrog cov txheej txheem siab heev xws li lub rooj vag oxidation, photolithography, thiab metallization.

Cov Txiaj Ntsig Tseem Ceeb

Muaj Peev Xwm Hluav Taws Xob Siab Tshaj Plaws– Cov khaubncaws sab nraud povtseg epitaxial tuab (100–500 μm) txhawb nqa cov qauv tsim MOSFET kV-chav kawm.
Zoo kawg nkaus Crystal- Qhov tsis tshua muaj dislocation thiab basal plane defect densities ua kom ntseeg tau thiab txo qis qhov xau.
6-Nti Cov Khoom Siv Loj- Kev txhawb nqa rau kev tsim khoom ntau, txo tus nqi rau ib lub cuab yeej, thiab kev sib raug zoo ntawm fab.
Cov Khoom Siv Thermal Zoo Tshaj Plaws- Kev ua haujlwm thermal conductivity siab thiab bandgap dav ua rau kev ua haujlwm zoo ntawm lub zog siab thiab kub.
Cov Kev Cai Hloov Kho Tau- Thickness, doping, orientation, thiab surface finish tuaj yeem ua raws li qhov xav tau tshwj xeeb.

Cov Lus Qhia Tshwj Xeeb

Cov Qauv	Cov Lus Qhia Tshwj Xeeb
Hom Kev Ua Hluav Taws Xob	N-hom (Nitrogen-doped)
Kev tiv taus	Txhua yam
Lub kaum sab xis tawm ntawm-axis	4° ± 0.5° (mus rau [11-20])
Kev Taw Qhia Crystal	(0001) Si-ntsej muag
Qhov tuab	200–300 μm (kho tau 100–500 μm)
Qhov Chaw Tiav	Pem Hauv Ntej: CMP txhuam (npaj txhij rau epi) Tom Qab: lapped lossis txhuam
TTV	≤ 10 μm
Hneev/Ntiv tes	≤ 20 μm

Cov Cheeb Tsam Thov

4H-SiC epitaxial wafers yog qhov zoo tshaj plaws rauMOSFETs nyob rau hauv cov kab ke ultra-high voltage, suav nrog:

Cov inverters traction tsheb fais fab & cov modules them hluav taws xob siab
Cov khoom siv xa xov thiab faib khoom ntawm lub grid ntse
Cov inverters zog rov ua dua tshiab (hnub ci, cua, cia khoom)
Cov khoom siv hluav taws xob loj thiab cov tshuab hloov pauv

Cov Lus Nug Feem Ntau

Q1: Hom kev coj ua hluav taws xob yog dab tsi?
A1: N-hom, doped nrog nitrogen - tus qauv kev lag luam rau MOSFETs thiab lwm yam khoom siv fais fab.

Q2: Muaj cov epitaxial thicknesses twg?
A2: 100–500 μm, nrog rau cov kev xaiv txheem ntawm 100 μm, 200 μm, thiab 300 μm. Kev cai tuab muaj nyob rau ntawm qhov kev thov.

Q3: Lub wafer orientation thiab lub kaum sab xis tawm yog dab tsi?
A3: (0001) Si-ntsej muag, nrog 4° ± 0.5° tawm-axis mus rau qhov kev taw qhia [11-20].

Txog Peb

XKH muaj kev txawj ntse hauv kev tsim khoom, kev tsim khoom, thiab kev muag khoom ntawm cov iav kho qhov muag tshwj xeeb thiab cov khoom siv siv lead ua tshiab. Peb cov khoom siv rau cov khoom siv hluav taws xob kho qhov muag, cov khoom siv hluav taws xob rau cov neeg siv khoom, thiab cov tub rog. Peb muab cov khoom siv kho qhov muag Sapphire, cov ntaub thaiv lub xov tooj ntawm tes, Ceramics, LT, Silicon Carbide SIC, Quartz, thiab semiconductor crystal wafers. Nrog kev txawj ntse thiab cov cuab yeej siv tshiab, peb ua tau zoo hauv kev ua cov khoom tsis yog tus qauv, lub hom phiaj yog ua lub tuam txhab ua khoom siv hluav taws xob kho qhov muag zoo tshaj plaws.