4 nti SiC Epi wafer rau MOS lossis SBD

Epitaxy hais txog kev loj hlob ntawm ib txheej ntawm cov khoom siv siv lead ua zoo dua rau ntawm qhov chaw ntawm silicon carbide substrate. Ntawm lawv, kev loj hlob ntawm gallium nitride epitaxial txheej ntawm ib semi-insulating silicon carbide substrate hu ua heterogeneous epitaxy; kev loj hlob ntawm silicon carbide epitaxial txheej ntawm qhov chaw ntawm ib qho conductive silicon carbide substrate hu ua homogeneous epitaxy.

Epitaxial yog raws li cov qauv tsim ntawm cov cuab yeej tsim ntawm kev loj hlob ntawm cov txheej txheem tseem ceeb, feem ntau txiav txim siab qhov kev ua tau zoo ntawm lub nti thiab lub cuab yeej, tus nqi ntawm 23%. Cov txheej txheem tseem ceeb ntawm SiC zaj duab xis nyias epitaxy ntawm theem no suav nrog: tshuaj lom neeg vapor deposition (CVD), molecular beam epitaxy (MBE), kua theem epitaxy (LPE), thiab pulsed laser deposition thiab sublimation (PLD).

Epitaxy yog ib qho kev sib txuas tseem ceeb heev hauv tag nrho kev lag luam. Los ntawm kev loj hlob GaN epitaxial txheej ntawm semi-insulating silicon carbide substrates, GaN epitaxial wafers raws li silicon carbide raug tsim tawm, uas tuaj yeem ua ntxiv rau hauv GaN RF cov khoom siv xws li high electron mobility transistors (HEMTs);

Los ntawm kev loj hlob ntawm silicon carbide epitaxial txheej ntawm cov khoom siv hluav taws xob kom tau txais silicon carbide epitaxial wafer, thiab hauv epitaxial txheej ntawm kev tsim khoom ntawm Schottky diodes, kub-oxygen ib nrab-field effect transistors, insulated gate bipolar transistors thiab lwm yam khoom siv fais fab, yog li qhov zoo ntawm epitaxial ntawm kev ua tau zoo ntawm lub cuab yeej muaj kev cuam tshuam loj heev rau kev txhim kho kev lag luam kuj tseem ua lub luag haujlwm tseem ceeb heev.