6 Nti 4H SEMI Hom SiC composite substrate Thickness 500μm TTV≤5μm MOS qib

Kev Piav Qhia Luv:

Nrog rau kev nce qib sai ntawm 5G kev sib txuas lus thiab radar thev naus laus zis, 6-nti semi-insulating SiC composite substrate tau dhau los ua cov khoom siv tseem ceeb rau kev tsim cov khoom siv zaus siab. Piv rau cov khoom siv GaAs ib txwm muaj, cov khoom siv no tswj tau qhov tsis kam siab (> 10⁸ Ω·cm) thaum txhim kho kev ua kom sov los ntawm ntau dua 5x, daws tau cov teeb meem kev sib cais cua sov hauv cov khoom siv millimeter-wave. Cov amplifiers fais fab hauv cov khoom siv niaj hnub xws li 5G smartphones thiab cov chaw sib txuas lus satellite yuav tsim los ntawm cov khoom siv no. Siv peb cov thev naus laus zis "buffer layer doping compensation", peb tau txo qhov ceev ntawm micropipe kom qis dua 0.5 / cm² thiab ua tiav qhov poob microwave qis heev ntawm 0.05 dB / hli.

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Cov yam ntxwv

Cov kev tsis sib xws

Cov khoom	Cov Lus Qhia Tshwj Xeeb	Cov khoom	Cov Lus Qhia Tshwj Xeeb
Txoj kab uas hla	150 ± 0.2 hli	Pem hauv ntej (Si-ntsej muag) roughness	Ra≤0.2 nm (5μm × 5μm)
Polytype	4H	Ntug Cib, Khawb, Tawg (tshuaj xyuas pom)	Tsis muaj dab tsi
Kev tiv taus	≥1E8 Ω·cm	TTV	≤5 μm
Hloov txheej tuab	≥0.4 μm	Ua kom nkhaus	≤35 μm
Tsis muaj dab tsi (2mm> D> 0.5mm)	≤5 ib daim / Wafer	Qhov tuab	500 ± 25 μm

Cov Nta Tseem Ceeb

1. Kev Ua Haujlwm Zoo Tshaj Plaws
Lub 6-nti semi-insulating SiC composite substrate siv cov txheej dielectric tsim qib, ua kom ntseeg tau tias dielectric qhov hloov pauv ntawm <2% hauv Ka-band (26.5-40 GHz) thiab txhim kho theem sib xws los ntawm 40%. 15% nce hauv kev ua haujlwm zoo thiab 20% qis dua kev siv hluav taws xob hauv T / R modules siv cov substrate no.

2. Kev Tswj Xyuas Kub Kub Zoo Tshaj Plaws
Ib qho qauv sib xyaw ua ke "thermal chỉnh" tshwj xeeb ua rau muaj kev ua haujlwm thermal ntawm 400 W/m·K. Hauv 28 GHz 5G chaw nres tsheb PA modules, qhov kub ntawm qhov sib txuas tsuas yog nce 28°C tom qab 24 teev ntawm kev ua haujlwm tas mus li—qis dua 50°C dua li cov kev daws teeb meem ib txwm muaj.

3. Kev Zoo Tshaj Plaws Wafer
Los ntawm txoj kev siv Physical Vapor Transport (PVT) uas zoo tshaj plaws, peb ua tiav qhov ceev ntawm qhov sib txawv <500/cm² thiab Total Thickness Variation (TTV) <3 μm.
4. Kev Ua Khoom Siv Tau Zoo
Peb cov txheej txheem laser annealing tshwj xeeb tsim rau 6-nti semi-insulating SiC composite substrate txo qhov ceev ntawm qhov chaw los ntawm ob qho kev txiav txim ntawm qhov loj me ua ntej epitaxy.

Cov Ntawv Thov Tseem Ceeb

1. Cov Cheebtsam Tseem Ceeb ntawm Chaw Nres Tsheb 5G
Hauv cov antenna arrays loj heev MIMO, GaN HEMT cov khoom siv ntawm 6-nti semi-insulating SiC composite substrates ua tiav 200W tso zis hluav taws xob thiab >65% kev ua haujlwm zoo. Kev sim hauv thaj teb ntawm 3.5 GHz qhia tau tias muaj kev nce 30% ntawm qhov kev pab them nqi.

2. Cov Txheej Txheem Sib Txuas Lus Los Ntawm Satellite
Cov tshuab xa xov tooj cua Low-Earth orbit (LEO) siv cov substrate no qhia txog 8 dB siab dua EIRP hauv Q-band (40 GHz) thaum txo qhov hnyav los ntawm 40%. SpaceX Starlink terminals tau txais yuav nws rau kev tsim khoom loj.

3. Cov Txheej Txheem Radar Tub Rog
Cov phased-array radar T/R modules ntawm lub substrate no ua tiav 6-18 GHz bandwidth thiab suab nrov tsawg li 1.2 dB, nthuav dav qhov kev kuaj pom los ntawm 50 km hauv cov kab ke radar ceeb toom ntxov.

4. Tsheb Millimeter-Wave Radar
79 GHz automotive radar chips siv cov substrate no txhim kho qhov kev daws teeb meem angular rau 0.5 °, ua tau raws li L4 autonomous tsav tsheb xav tau.

Peb muab kev pabcuam daws teeb meem rau 6-nti semi-insulating SiC composite substrates. Hais txog kev hloov kho cov khoom siv, peb txhawb nqa kev tswj hwm qhov tseeb ntawm resistivity hauv qhov ntau ntawm 10⁶-10¹⁰ Ω·cm. Tshwj xeeb tshaj yog rau cov ntawv thov tub rog, peb tuaj yeem muab kev xaiv ultra-high resistance ntawm >10⁹ Ω·cm. Nws muaj peb qhov tuab ntawm 200μm, 350μm thiab 500μm tib lub sijhawm, nrog rau kev kam rau siab tswj hwm nruj me ntsis hauv ± 10μm, ua tau raws li cov kev xav tau sib txawv los ntawm cov khoom siv zaus siab mus rau cov ntawv thov muaj zog siab.

Hais txog cov txheej txheem kho qhov chaw, peb muab ob txoj kev daws teeb meem tshaj lij: Kev Siv Tshuaj Kho Mob (CMP) tuaj yeem ua tiav qhov tiaj tiaj ntawm qhov chaw atomic nrog Ra <0.15nm, ua tau raws li qhov xav tau ntawm kev loj hlob epitaxial; Cov thev naus laus zis kho qhov chaw epitaxial rau kev xav tau sai sai tuaj yeem muab cov chaw du nrog Sq <0.3nm thiab cov oxide thickness seem <1nm, ua kom yooj yim rau cov txheej txheem ua ntej ntawm tus neeg siv khoom kawg.

XKH muab cov kev daws teeb meem tshwj xeeb rau 6-nti semi-insulating SiC composite substrates

1. Kev Kho Kom Haum Rau Cov Khoom Siv
Peb muab kev kho qhov tsis kam kom raug hauv qhov ntau ntawm 10⁶-10¹⁰ Ω·cm, nrog rau cov kev xaiv tshwj xeeb ultra-high resistivity >10⁹ Ω·cm muaj rau kev siv tub rog / aerospace.

2. Cov Lus Qhia Txog Qhov Thickness
Peb txoj kev xaiv tuab txheem:

· 200μm (zoo rau cov khoom siv zaus siab)

· 350μm (tus qauv qhia)

· 500μm (tsim los rau cov ntawv thov muaj zog siab)
· Txhua hom kev hloov pauv tswj tau qhov tuab nruj ntawm ± 10μm.

3. Cov Txuj Ci Kho Nto

Kev Siv Tshuaj Txhuam Txhuam (CMP): Ua tiav qhov tiaj tiaj ntawm qhov chaw atomic nrog Ra <0.15nm, ua tau raws li qhov yuav tsum tau ua kom loj hlob ntawm epitaxial rau RF thiab cov khoom siv fais fab.

4. Kev Ua Haujlwm Nto Epi-Npaj

· Muab cov nplaim du heev nrog Sq <0.3nm roughness

Tswj cov tuab ntawm cov oxide hauv paus kom <1nm

· Tshem tawm txog li 3 kauj ruam ua ntej ntawm cov chaw rau cov neeg siv khoom