6 Nti Conductive SiC Composite Substrate 4H Txoj Kab uas hla 150 hli Ra≤0.2nm Warp≤35μm

Kev Piav Qhia Luv:

Tsav los ntawm kev lag luam semiconductor nrhiav kev ua tau zoo dua thiab tus nqi qis dua, 6-nti conductive SiC composite substrate tau tshwm sim. Los ntawm cov thev naus laus zis tshiab ntawm cov khoom siv sib xyaw, 6-nti wafer no ua tiav 85% ntawm kev ua tau zoo ntawm 8-nti wafers ib txwm muaj thaum tus nqi tsuas yog 60% ntau dua. Cov khoom siv hluav taws xob hauv kev siv txhua hnub xws li chaw nres tsheb fais fab tshiab, 5G chaw nres tsheb fais fab modules, thiab txawm tias cov tsav tsheb hloov pauv zaus hauv cov khoom siv hauv tsev zoo tshaj plaws tej zaum yuav twb siv cov substrates ntawm hom no. Peb cov thev naus laus zis ntau txheej epitaxial loj hlob patented ua rau atomic-level flat composite interfaces ntawm SiC bases, nrog interface state density qis dua 1 × 10¹¹ / cm²·eV - ib qho specification uas tau mus txog qib thoob ntiaj teb.


Cov yam ntxwv

Cov kev tsis sib xws

Cov khoom

Kev tsim khoomqib

Dummyqib

Txoj kab uas hla

6-8 nti

6-8 nti

Qhov tuab

350/500 ± 25.0 μm

350/500 ± 25.0 μm

Polytype

4H

4H

Kev tiv taus

0.015-0.025 ohm·cm

0.015-0.025 ohm·cm

TTV

≤5 μm

≤20 μm

Ua kom nkhaus

≤35 μm

≤55 μm

Pem hauv ntej (Si-ntsej muag) roughness

Ra≤0.2 nm (5μm × 5μm)

Ra≤0.2 nm (5μm × 5μm)

Cov Nta Tseem Ceeb

1. Qhov Zoo ntawm Tus Nqi: Peb lub 6-nti conductive SiC composite substrate siv cov thev naus laus zis "graded buffer layer" uas ua kom cov khoom siv zoo dua los txo cov nqi raw khoom los ntawm 38% thaum tswj kev ua haujlwm hluav taws xob zoo heev. Kev ntsuas tiag tiag qhia tau tias 650V MOSFET cov khoom siv substrate no ua tiav 42% txo tus nqi ib cheeb tsam piv rau cov kev daws teeb meem ib txwm muaj, uas yog qhov tseem ceeb rau kev txhawb nqa kev siv SiC hauv cov khoom siv hluav taws xob.
2. Cov Khoom Siv Zoo Tshaj Plaws: Los ntawm cov txheej txheem tswj kev siv nitrogen doping, peb cov khoom siv SiC sib xyaw ua ke 6-nti ua tau zoo heev ntawm 0.012-0.022Ω·cm, nrog rau kev hloov pauv tswj tau hauv ± 5%. Qhov tseem ceeb, peb tswj kev sib npaug ntawm kev tiv taus txawm tias nyob hauv thaj tsam ntug 5 hli ntawm lub wafer, daws qhov teeb meem ntug ntev hauv kev lag luam.
3. Kev Ua Haujlwm Kub: Ib lub module 1200V/50A uas tsim los ntawm kev siv peb lub substrate qhia tsuas yog 45 ℃ qhov kub ntawm qhov sib txuas nce siab tshaj qhov kub ntawm ib puag ncig thaum ua haujlwm puv ntoob - qis dua 65 ℃ dua li cov khoom siv silicon sib piv. Qhov no tau ua tiav los ntawm peb cov qauv "3D thermal channel" uas txhim kho kev ua haujlwm kub ntawm sab nraud mus rau 380W/m·K thiab kev ua haujlwm kub ntawm ntsug mus rau 290W/m·K.
4. Kev Sib Haum Xeeb ntawm Cov Txheej Txheem: Rau cov qauv tshwj xeeb ntawm 6-nti conductive SiC composite substrates, peb tau tsim cov txheej txheem stealth laser dicing sib phim uas ua tiav 200mm / s txiav ceev thaum tswj cov ntug chipping hauv qab 0.3μm. Tsis tas li ntawd, peb muab cov kev xaiv substrate pre-nickel-plated uas ua rau muaj kev sib txuas ncaj qha, txuag cov neeg siv khoom ob kauj ruam txheej txheem.

Cov Ntawv Thov Tseem Ceeb

Cov Khoom Siv Smart Grid Tseem Ceeb:

Hauv cov kab ke xa hluav taws xob ultra-high voltage direct current (UHVDC) uas ua haujlwm ntawm ± 800kV, IGCT cov khoom siv siv peb cov khoom siv sib xyaw ua ke 6-nti conductive SiC qhia txog kev ua tau zoo heev. Cov khoom siv no ua tiav 55% txo qis kev poob ntawm kev hloov pauv thaum lub sijhawm hloov pauv, thaum ua kom tag nrho cov txheej txheem ua haujlwm tau zoo dua 99.2%. Cov khoom siv thermal conductivity zoo dua (380W / m·K) ua rau cov qauv hloov pauv me me uas txo cov chaw hloov pauv los ntawm 25% piv rau cov kev daws teeb meem silicon ib txwm muaj.

Cov Tsheb Fais Fab Tshiab:

Lub tshuab tsav uas siv peb cov khoom siv SiC sib xyaw ua ke 6-nti ua rau muaj zog inverter uas tsis tau muaj dua li ntawm 45kW/L - qhov kev txhim kho 60% piv rau lawv cov qauv tsim 400V silicon yav dhau los. Qhov zoo tshaj plaws, lub tshuab tswj tau 98% kev ua haujlwm thoob plaws tag nrho qhov kub thiab txias ntawm -40 ℃ txog +175 ℃, daws cov teeb meem kev ua haujlwm hauv huab cua txias uas tau ua rau muaj kev siv EV hauv thaj chaw sab qaum teb. Kev sim tiag tiag qhia tau tias muaj kev nce 7.5% ntawm lub caij ntuj no rau cov tsheb uas muaj cov thev naus laus zis no.

Cov Tsav Tsheb Hloov Pauv Zaus Hauv Kev Lag Luam:

Kev siv peb cov substrates hauv cov khoom siv fais fab ntse (IPMs) rau cov tshuab servo kev lag luam yog hloov pauv kev tsim khoom automation. Hauv CNC machining chaw, cov modules no xa 40% sai dua lub cev muaj zog teb (txo lub sijhawm nrawm los ntawm 50ms mus rau 30ms) thaum txiav cov suab nrov electromagnetic los ntawm 15dB mus rau 65dB (A).

Cov Khoom Siv Hluav Taws Xob Rau Cov Neeg Siv Khoom:

Kev hloov pauv ntawm cov khoom siv hluav taws xob rau cov neeg siv khoom txuas ntxiv mus nrog peb cov khoom siv ua rau cov khoom siv them ceev 65W GaN tiam tom ntej. Cov khoom siv hluav taws xob me me no ua tiav 30% txo qhov ntim (mus txog 45cm³) thaum tswj hwm tag nrho cov zis hluav taws xob, ua tsaug rau cov yam ntxwv hloov pauv zoo dua ntawm cov qauv tsim SiC. Kev thaij duab thermal qhia txog qhov kub siab tshaj plaws ntawm tsuas yog 68 ° C thaum lub sijhawm ua haujlwm tas mus li - txias dua 22 ° C dua li cov qauv tsim ib txwm muaj - txhim kho lub neej khoom thiab kev nyab xeeb.

XKH Kev Pabcuam Kho Kom Haum

XKH muab kev txhawb nqa kev hloov kho kom haum rau 6-nti conductive SiC composite substrates:

Kev Kho Kom Haum Thickness: Cov kev xaiv suav nrog 200μm, 300μm, thiab 350μm cov lus qhia
2. Kev Tswj Xyuas Resistivity: Kho tau qhov n-hom doping concentration ntawm 1 × 10¹⁸ txog 5 × 10¹⁸ cm⁻³

3. Kev Taw Qhia Siv Crystal: Kev txhawb nqa rau ntau yam kev taw qhia suav nrog (0001) tawm-axis 4 ° lossis 8 °

4. Kev Pab Kuaj: Ua tiav cov ntawv qhia txog kev xeem wafer-level parameter

 

Peb lub sijhawm ua haujlwm tam sim no los ntawm kev tsim qauv mus rau kev tsim khoom loj tuaj yeem luv li 8 lub lis piam. Rau cov neeg siv khoom tseem ceeb, peb muab cov kev pabcuam tsim cov txheej txheem tshwj xeeb kom ntseeg tau tias phim cov khoom siv uas xav tau.

6-nti conductive SiC composite substrate 4
6-nti conductive SiC composite substrate 5
6-nti conductive SiC composite substrate 6

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