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6 nti Conductive ib leeg siv lead ua SiC ntawm polycrystalline SiC composite substrate Txoj kab uas hla 150 hli P hom N hom

6 nti Conductive ib leeg siv lead ua SiC rau ntawm polycrystalline SiC composite substrate Txoj kab uas hla 150 hli P hom N hom Featured Duab
  • 6 nti Conductive ib leeg siv lead ua SiC ntawm polycrystalline SiC composite substrate Txoj kab uas hla 150 hli P hom N hom
  • 6 nti Conductive ib leeg siv lead ua SiC ntawm polycrystalline SiC composite substrate Txoj kab uas hla 150 hli P hom N hom

Kev Piav Qhia Luv:

Lub 6-nti conductive monocrystalline SiC ntawm polycrystalline SiC composite substrate sawv cev rau ib qho tshiab silicon carbide (SiC) cov khoom siv daws teeb meem tsim rau cov khoom siv hluav taws xob muaj zog, kub siab, thiab zaus siab. Lub substrate no muaj ib txheej SiC ib leeg-crystalline uas txuas nrog lub hauv paus polycrystalline SiC los ntawm cov txheej txheem tshwj xeeb, sib txuas cov khoom siv hluav taws xob zoo dua ntawm monocrystalline SiC nrog cov txiaj ntsig zoo ntawm polycrystalline SiC.
Piv rau cov khoom siv SiC uas muaj monocrystalline tag nrho, 6-nti conductive monocrystalline SiC ntawm polycrystalline SiC composite substrate tswj tau qhov muaj zog ntawm electron thiab tiv taus hluav taws xob siab thaum txo cov nqi tsim khoom. Nws qhov loj 6-nti (150 hli) wafer ua kom muaj kev sib raug zoo nrog cov kab tsim khoom semiconductor uas twb muaj lawm, ua rau muaj kev tsim khoom loj. Tsis tas li ntawd, tus qauv tsim conductive tso cai rau kev siv ncaj qha hauv kev tsim khoom siv hluav taws xob (piv txwv li, MOSFETs, diodes), tshem tawm qhov xav tau cov txheej txheem doping ntxiv thiab ua kom yooj yim rau cov txheej txheem tsim khoom.


Cov yam ntxwv

Cov kev tsis sib xws

Loj:

6 nti

Txoj kab uas hla:

150 hli

Qhov tuab:

400-500 μm

Cov Txheej Txheem Zaj Duab Xis Monocrystalline SiC

Hom ntau yam:

4H-SiC los yog 6H-SiC

Kev Ntsuas Doping:

1 × 10¹⁴ - 1 × 10¹⁸ cm⁻³

Qhov tuab:

5-20 μm

Daim Ntawv Tsis kam:

10-1000 Ω/sq

Kev txav mus los ntawm cov hluav taws xob:

800-1200 cm²/Vs

Kev txav mus los ntawm qhov:

100-300 cm²/Vs

Cov Txheej Txheem Txheej Txheem Polycrystalline SiC Buffer

Qhov tuab:

50-300 μm

Kev Ua Kub:

150-300 W/m·K

Cov Txheej Txheem Monocrystalline SiC Substrate

Hom ntau yam:

4H-SiC los yog 6H-SiC

Kev Ntsuas Doping:

1 × 10¹⁴ - 1 × 10¹⁸ cm⁻³

Qhov tuab:

300-500 μm

Qhov Loj ntawm Cov Nplej:

> 1 hli

Qhov Roughness ntawm Qhov Chaw:

< 0.3 hli RMS

Cov Khoom Siv Kho Tshuab & Hluav Taws Xob

Qhov nyuaj:

9-10 Mohs

Lub zog nias:

3-4 GPa

Lub zog tensile:

0.3-0.5 GPa

Lub zog ntawm thaj chaw tawg:

> 2 MV/cm2

Tag Nrho Cov Koob Tshuaj Tiv Thaiv:

> 10 Mrad

Kev Tiv Thaiv Ib Qho Kev Tshwm Sim:

> 100 MeV·cm²/mg

Kev Ua Kub:

150-380 W/m·K

Kev Ua Haujlwm Kub Ntau:

-55 txog 600 ° C

 

Cov Yam Ntxwv Tseem Ceeb

Lub 6-nti conductive monocrystalline SiC ntawm polycrystalline SiC composite substrate muab qhov sib npaug tshwj xeeb ntawm cov qauv khoom siv thiab kev ua tau zoo, ua rau nws tsim nyog rau cov chaw ua haujlwm xav tau:

1. Kev Siv Nyiaj Zoo: Lub hauv paus polycrystalline SiC txo cov nqi ntau piv rau cov puv-monocrystalline SiC, thaum lub monocrystalline SiC txheej ua kom muaj kev ua tau zoo, zoo tagnrho rau cov ntawv thov uas tsis tshua muaj nqi.

2. Cov Khoom Siv Hluav Taws Xob Zoo Tshaj Plaws: Cov txheej txheem SiC monocrystalline qhia txog kev txav mus los siab (> 500 cm² / V · s) thiab qhov tsis zoo tsawg, txhawb nqa kev ua haujlwm ntawm cov khoom siv zaus siab thiab lub zog siab.

3. Kev Ruaj Ntseg Kub Siab: SiC qhov kev tiv taus kub siab (> 600 ° C) ua kom cov khoom sib xyaw ua ke ruaj khov nyob rau hauv cov xwm txheej hnyav, ua rau nws tsim nyog rau cov tsheb fais fab thiab cov ntawv thov kev lag luam.

4.6-nti Txheem Wafer Loj: Piv rau cov khoom siv SiC 4-nti ib txwm muaj, hom ntawv 6-nti ua rau cov khoom siv chip ntau dua 30%, txo cov nqi khoom siv ib chav.

5. Tsim Kev Coj Ua: Cov khaubncaws sab nraud povtseg N-hom lossis P-hom uas tau muab doped ua ntej txo cov kauj ruam ion implantation hauv kev tsim khoom siv, txhim kho kev ua haujlwm zoo thiab cov txiaj ntsig.

6. Kev Tswj Xyuas Kub Zoo Tshaj Plaws: Lub hauv paus polycrystalline SiC lub thermal conductivity (~ 120 W / m · K) ze rau monocrystalline SiC, daws tau cov teeb meem cua sov hauv cov khoom siv hluav taws xob siab.

Cov yam ntxwv no tso lub 6-nti conductive monocrystalline SiC rau ntawm polycrystalline SiC composite substrate ua qhov kev daws teeb meem sib tw rau kev lag luam xws li lub zog rov ua dua tshiab, kev thauj mus los ntawm tsheb ciav hlau, thiab aerospace.

Cov Ntawv Thov Tseem Ceeb

Lub 6-nti conductive monocrystalline SiC ntawm polycrystalline SiC composite substrate tau raug xa mus rau ntau qhov chaw muaj neeg xav tau ntau:
1. Cov Tsheb Fais Fab: Siv rau hauv cov hluav taws xob siab SiC MOSFETs thiab diodes los txhim kho kev ua haujlwm ntawm inverter thiab txuas ntxiv ntau yam roj teeb (piv txwv li, Tesla, BYD qauv).

2. Kev Tsav Tsheb Hauv Kev Lag Luam: Ua kom muaj cov modules fais fab kub thiab hloov pauv zaus, txo kev siv hluav taws xob hauv cov tshuab hnyav thiab cov turbines cua.

3. Photovoltaic Inverters: Cov khoom siv SiC txhim kho kev hloov pauv hnub ci (> 99%), thaum cov khoom sib xyaw ua ke txo cov nqi ntawm lub kaw lus.

4. Kev Thauj Mus Los Ntawm Tsheb Ciav Hlau: Siv rau hauv cov khoom siv hloov pauv rau kev tsheb ciav hlau ceev thiab cov kab ke hauv av, muab kev tiv thaiv hluav taws xob siab (> 1700V) thiab cov qauv me me.

5.Aerospace: Zoo tagnrho rau cov tshuab fais fab satellite thiab cov cav dav hlau tswj circuits, muaj peev xwm tiv taus qhov kub thiab txias heev.

Hauv kev tsim khoom siv, 6-nti conductive monocrystalline SiC ntawm polycrystalline SiC composite substrate yog sib xws nrog cov txheej txheem SiC txheem (piv txwv li, lithography, etching), tsis tas yuav muaj kev nqis peev ntxiv.

XKH Cov Kev Pabcuam

XKH muab kev txhawb nqa rau 6-nti conductive monocrystalline SiC ntawm polycrystalline SiC composite substrate, suav nrog R&D mus rau kev tsim khoom loj:

1. Kev Kho Kom Haum: Kho tau qhov tuab ntawm cov txheej monocrystalline (5–100 μm), qhov concentration ntawm doping (1e15–1e19 cm⁻³), thiab qhov kev taw qhia ntawm cov siv lead ua (4H/6H-SiC) kom tau raws li ntau yam kev xav tau ntawm cov khoom siv.

2. Kev Ua Wafer: Kev muab khoom ntau ntawm 6-nti substrates nrog backside thinning thiab metallization kev pabcuam rau kev sib koom ua ke-thiab-ua si.

3. Kev Txheeb Xyuas Txuj Ci: suav nrog kev tshuaj xyuas XRD crystallinity, kev sim Hall effect, thiab kev ntsuas kev tiv thaiv thermal kom ua tiav cov khoom siv sai dua.

4. Kev Tsim Qauv Sai: Cov qauv 2- txog 4-nti (tib txoj kev) rau cov tsev kawm tshawb fawb kom ua kom cov voj voog kev loj hlob sai dua.

5. Kev Tshawb Fawb Txog Kev Ua Tsis Tau Zoo & Kev Txhim Kho: Cov kev daws teeb meem ntawm cov khoom siv rau kev ua cov teeb meem (piv txwv li, cov teeb meem ntawm cov txheej epitaxial).

Peb lub hom phiaj yog tsim kom muaj 6-nti conductive monocrystalline SiC ntawm polycrystalline SiC composite substrate ua qhov kev daws teeb meem zoo tshaj plaws rau SiC fais fab electronics, muab kev txhawb nqa kawg-rau-kawg los ntawm prototyping mus rau qhov ntau lawm.

Xaus lus

Lub 6-nti conductive monocrystalline SiC ntawm polycrystalline SiC composite substrate ua tiav qhov sib npaug ntawm kev ua tau zoo thiab tus nqi los ntawm nws cov qauv mono/polycrystalline hybrid tshiab. Thaum cov tsheb fais fab loj hlob thiab Kev Lag Luam 4.0 nce qib, lub substrate no muab lub hauv paus khoom siv txhim khu kev qha rau cov khoom siv hluav taws xob tiam tom ntej. XKH txais tos kev koom tes los tshawb nrhiav ntxiv txog lub peev xwm ntawm SiC thev naus laus zis.

6 nti ib leeg siv lead ua SiC ntawm polycrystalline SiC composite substrate 2
6 nti ib leeg siv lead ua SiC ntawm polycrystalline SiC composite substrate 3
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