6 nti GaN-Hauv-Sapphire
150 hli 6 nti GaN ntawm Silicon/Sapphire/SiC Epi-txheej wafer Gallium nitride epitaxial wafer
Lub 6-nti sapphire substrate wafer yog cov khoom siv semiconductor zoo uas muaj cov khaubncaws sab nraud povtseg ntawm gallium nitride (GaN) uas loj hlob ntawm sapphire substrate. Cov khoom siv no muaj cov khoom siv hluav taws xob zoo heev thiab zoo tagnrho rau kev tsim cov khoom siv semiconductor muaj zog thiab zaus siab.
Txoj Kev Tsim Khoom: Cov txheej txheem tsim khoom suav nrog kev cog cov khaubncaws sab nraud povtseg GaN rau ntawm cov khoom siv sapphire siv cov txheej txheem siab heev xws li cov hlau-organic chemical vapor deposition (MOCVD) lossis molecular beam epitaxy (MBE). Cov txheej txheem deposition yog ua tiav raws li cov xwm txheej tswj hwm kom ntseeg tau tias cov khoom siv crystal zoo thiab cov yeeb yaj kiab sib xws.
Daim ntawv thov 6-nti GaN-On-Sapphire: 6-nti sapphire substrate chips yog siv dav hauv kev sib txuas lus microwave, radar systems, wireless technology thiab optoelectronics.
Qee cov ntawv thov uas siv ntau suav nrog
1. Rf lub zog amplifier
2. Kev lag luam teeb pom kev zoo LED
3. Cov khoom siv sib txuas lus wireless network
4. Cov khoom siv hluav taws xob hauv qhov chaw kub siab
5. Cov khoom siv hluav taws xob Optoelectronic
Cov lus qhia txog khoom
- Loj: Lub substrate txoj kab uas hla yog 6 nti (kwv yees li 150 hli).
- Qhov zoo ntawm qhov chaw: Qhov chaw tau raug txhuam kom zoo kom muab qhov zoo ntawm daim iav.
- Thickness: Lub thickness ntawm GaN txheej tuaj yeem hloov kho raws li qhov xav tau tshwj xeeb.
- Ntim: Cov khoom siv hauv qab no tau ntim nrog cov khoom tiv thaiv hluav taws xob kom tiv thaiv kev puas tsuaj thaum thauj mus los.
- Cov npoo ntawm qhov chaw: Cov khoom siv hauv qab no muaj cov npoo tshwj xeeb uas pab txhawb kev sib phim thiab kev ua haujlwm thaum lub sijhawm npaj khoom siv.
- Lwm cov kev ntsuas: Cov kev ntsuas tshwj xeeb xws li thinness, resistivity thiab doping concentration tuaj yeem hloov kho raws li cov neeg siv khoom xav tau.
Nrog lawv cov khoom siv zoo tshaj plaws thiab ntau yam kev siv, 6-nti sapphire substrate wafers yog qhov kev xaiv txhim khu kev qha rau kev tsim cov khoom siv semiconductor ua tau zoo hauv ntau yam lag luam.
| Cov khoom siv hauv qab | 6” 1 hli <111> p-hom Si | 6” 1 hli <111> p-hom Si |
| Epi ThickAvg | ~5um | ~7um |
| Epi ThickUnif | <2% | <2% |
| Hneev | +/-45um | +/-45um |
| Kev tawg | <5 hli | <5 hli |
| Vertical BV | >1000V | >1400V |
| HEMT Al% | 25-35% | 25-35% |
| HEMT Qhov Nruab Nrab | 20-30nm | 20-30nm |
| Insitu SiN Cap | 5-60nm | 5-60nm |
| 2DEG conc. | ~1013cm-2 | ~1013cm-2 |
| Kev txav mus los | ~2000cm2/Vs (<2%) | ~2000cm2/Vs (<2%) |
| Rsh | <330ohm/sq (<2%) | <330ohm/sq (<2%) |
Daim duab qhia ntxaws ntxaws
