8 nti SiC silicon carbide wafer 4H-N hom 0.5 hli qib tsim khoom tshawb fawb qib kev cai polished substrate

8 nti SiC silicon carbide wafer 4H-N hom 0.5 hli ntau lawm qib kev tshawb fawb qib kev cai polished substrate Featured Duab

Kev Piav Qhia Luv:

Silicon carbide (SiC), tseem hu ua silicon carbide, yog ib qho semiconductor uas muaj silicon thiab carbon nrog cov tshuaj lom neeg SiC. SiC siv rau hauv cov khoom siv hluav taws xob semiconductor uas ua haujlwm ntawm qhov kub siab lossis siab siab, lossis ob qho tib si. SiC kuj yog ib qho ntawm cov khoom tseem ceeb ntawm LED, nws yog ib qho substrate rau kev loj hlob ntawm GaN cov khoom siv, thiab nws kuj tseem siv tau ua lub dab dej kub rau cov LEDs muaj zog siab.
8-nti silicon carbide substrate yog ib feem tseem ceeb ntawm tiam thib peb ntawm cov ntaub ntawv semiconductor, uas muaj cov yam ntxwv ntawm lub zog tawg siab, kev ua kom sov siab, kev hloov pauv hluav taws xob siab, thiab lwm yam, thiab nws tsim nyog rau kev ua cov khoom siv hluav taws xob kub siab, hluav taws xob siab, thiab hluav taws xob siab. Nws cov teb tseem ceeb suav nrog tsheb fais fab, kev thauj mus los ntawm tsheb ciav hlau, kev xa hluav taws xob siab thiab kev hloov pauv, photovoltaics, 5G kev sib txuas lus, kev khaws cia hluav taws xob, aerospace, thiab AI core computing power data center.

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Cov yam ntxwv

Cov yam ntxwv tseem ceeb ntawm 8-nti silicon carbide substrate 4H-N hom suav nrog:

1. Qhov ceev ntawm Microtubule: ≤ 0.1/cm² lossis qis dua, xws li qhov ceev ntawm microtubule raug txo qis kom tsawg dua 0.05/cm² hauv qee yam khoom.
2. Piv txwv ntawm cov khoom siv lead ua: 4H-SiC cov khoom siv lead ua piv txwv ncav cuag 100%.
3. Kev Tiv Thaiv: 0.014~0.028 Ω·cm, lossis ruaj khov dua ntawm 0.015-0.025 Ω·cm.
4. Qhov roughness ntawm qhov chaw: CMP Si Face Ra≤0.12nm.
5. Thickness: Feem ntau 500.0 ± 25μm lossis 350.0 ± 25μm.
6. Lub kaum sab xis ntawm lub kaum sab xis: 25 ± 5° lossis 30 ± 5° rau A1/A2 nyob ntawm seb tuab npaum li cas.
7. Tag nrho qhov ceev ntawm qhov tawg: ≤3000 / cm².
8. Kev sib kis ntawm cov hlau nto: ≤1E + 11 atoms / cm².
9. Khoov thiab warpage: ≤ 20μm thiab ≤2μm, feem.
Cov yam ntxwv no ua rau 8-nti silicon carbide substrates muaj txiaj ntsig zoo rau kev siv hauv kev tsim cov khoom siv hluav taws xob kub, zaus siab, thiab lub zog siab.

8 nti silicon carbide wafer muaj ntau daim ntawv thov.

1. Cov khoom siv fais fab: SiC wafers siv dav hauv kev tsim cov khoom siv hluav taws xob xws li fais fab MOSFETs (hlau-oxide-semiconductor field-effect transistors), Schottky diodes, thiab cov modules sib koom ua ke fais fab. Vim yog qhov thermal conductivity siab, high breakdown voltage, thiab high electron mobility ntawm SiC, cov khoom siv no tuaj yeem ua tiav kev hloov pauv fais fab zoo, ua haujlwm siab hauv qhov kub thiab txias, high-voltage, thiab high-frequency ib puag ncig.

2. Cov khoom siv Optoelectronic: SiC wafers ua lub luag haujlwm tseem ceeb hauv cov khoom siv optoelectronic, siv los tsim cov photodetectors, laser diodes, ultraviolet sources, thiab lwm yam. Silicon carbide cov khoom siv optical thiab electronic zoo dua ua rau nws yog cov khoom siv xaiv, tshwj xeeb tshaj yog hauv cov ntawv thov uas xav tau qhov kub siab, zaus siab, thiab qib fais fab siab.

3. Cov Khoom Siv Xov Tooj Cua Zaus (RF): SiC chips kuj tseem siv los tsim cov khoom siv RF xws li RF lub zog amplifiers, cov hloov pauv zaus siab, RF sensors, thiab ntau ntxiv. SiC qhov kev ruaj khov thermal siab, cov yam ntxwv zaus siab, thiab kev poob qis ua rau nws zoo tagnrho rau cov ntawv thov RF xws li kev sib txuas lus wireless thiab radar systems.

4. Cov khoom siv hluav taws xob kub-siab: Vim lawv qhov kev ruaj khov thermal siab thiab qhov kub thiab txias elasticity, SiC wafers yog siv los tsim cov khoom siv hluav taws xob tsim los ua haujlwm hauv qhov chaw kub-siab, suav nrog cov khoom siv hluav taws xob kub-siab, sensors, thiab controllers.

Cov kev siv tseem ceeb ntawm 8-nti silicon carbide substrate 4H-N hom suav nrog kev tsim cov khoom siv hluav taws xob kub, zaus siab, thiab lub zog siab, tshwj xeeb tshaj yog nyob rau hauv cov teb ntawm cov khoom siv hluav taws xob hauv tsheb, lub zog hnub ci, lub zog cua tsim hluav taws xob, lub tshuab hluav taws xob, cov servers, cov khoom siv hauv tsev, thiab cov tsheb hluav taws xob. Tsis tas li ntawd, cov khoom siv xws li SiC MOSFETs thiab Schottky diodes tau ua pov thawj zoo heev hauv kev hloov zaus, kev sim luv luv, thiab kev siv inverter, tsav lawv siv hauv cov khoom siv hluav taws xob.

XKH tuaj yeem hloov kho nrog ntau qhov tuab sib txawv raws li cov neeg siv khoom xav tau. Muaj ntau hom kev kho kom zoo nkauj thiab kev txhuam kom du. Muaj ntau hom kev doping (xws li nitrogen doping). XKH tuaj yeem muab kev txhawb nqa kev txawj ntse thiab kev sab laj kom ntseeg tau tias cov neeg siv khoom tuaj yeem daws teeb meem hauv kev siv. Lub substrate silicon carbide 8-nti muaj qhov zoo tseem ceeb hauv kev txo nqi thiab muaj peev xwm ntau dua, uas tuaj yeem txo tus nqi ntawm cov khoom siv li ntawm 50% piv rau lub substrate 6-nti. Tsis tas li ntawd, qhov tuab ntxiv ntawm lub substrate 8-nti pab txo qhov sib txawv ntawm geometric thiab ntug warping thaum lub sijhawm machining, yog li txhim kho cov txiaj ntsig.