8 nti 200 hli Silicon Carbide SiC Wafers 4H-N hom Qib ntau lawm 500um tuab

Kev Piav Qhia Luv:

Shanghai Xinkehui Tech. Co., Ltd muab cov kev xaiv zoo tshaj plaws thiab tus nqi rau cov silicon carbide wafers zoo thiab cov substrates txog li 8 nti txoj kab uas hla nrog N- thiab semi-insulating hom. Cov tuam txhab me thiab loj semiconductor khoom siv thiab cov chaw tshawb fawb thoob ntiaj teb siv thiab vam khom peb cov silicone carbide wafers.

Xa email rau peb

Cov yam ntxwv

Cov Lus Qhia Txog SiC 200mm 8inch

Loj: 8 nti;

Txoj kab uas hla: 200mm ± 0.2;

Tuab: 500um ± 25;

Kev Taw Qhia Nto: 4 mus rau [11-20] ± 0.5 °;

Kev taw qhia ntawm qhov tsis sib xws: [1-100] ± 1 °;

Qhov tob ntawm qhov tsis sib xws: 1 ± 0.25 hli;

Cov kav dej me me: <1cm2;

Phaj Hex: Tsis muaj leej twg tso cai;

Kev tiv taus: 0.015 ~ 0.028Ω;

EPD: <8000cm2;

TED: <6000cm2

BPD: <2000cm2

TSD: <1000cm2

SF: cheeb tsam <1%

TTV≤15um;

Warp≤40um;

Hneev ≤ 25um;

Cov cheeb tsam Poly: ≤5%;

Kos: <5 thiab Cumulative Length < 1 Wafer Txoj kab uas hla;

Cov Chips / Indents: Tsis muaj kev tso cai D> 0.5mm Dav thiab Qhov tob;

Cov kab nrib pleb: Tsis muaj;

Xim: Tsis muaj

Wafer ntug: Chamfer;

Qhov chaw tiav: Ob Sab Polish, Si Face CMP;

Ntim: Multi-wafer Cassette Los yog Ib Lub Thawv Wafer;

Cov teeb meem tam sim no hauv kev npaj ntawm 200 hli 4H-SiC siv lead ua lub ntsiab

1) Kev npaj cov khoom siv zoo 200 hli 4H-SiC noob siv lead ua;

2) Qhov kub thiab txias loj tsis sib xws thiab kev tswj cov txheej txheem nucleation;

3) Kev thauj mus los zoo thiab kev hloov pauv ntawm cov khoom siv roj hauv cov kab ke loj hlob ntawm cov siv lead ua;

4) Crystal tawg thiab qhov tsis zoo tshwm sim los ntawm kev kub ntxhov loj heev.

Yuav kom kov yeej cov teeb meem no thiab tau txais cov kev daws teeb meem zoo 200 hli SiC wafers tau muab tso rau hauv qab no:

Hais txog kev npaj siv lead ua noob 200 hli, qhov kub thiab txias tsim nyog, thiab kev sib dhos nthuav dav tau kawm thiab tsim los coj mus rau hauv tus account qhov zoo ntawm siv lead ua thiab qhov loj me nthuav dav; Pib nrog 150 hli SiC se:d siv lead ua, ua cov noob siv lead ua iteration kom maj mam nthuav SiC crystalsize kom txog thaum nws mus txog 200 hli; Los ntawm ntau qhov kev loj hlob ntawm siv lead ua thiab cov txheej txheem, maj mam ua kom zoo dua qhov zoo ntawm siv lead ua hauv thaj chaw nthuav dav siv lead ua, thiab txhim kho qhov zoo ntawm 200 hli noob siv lead ua.

Hais txog 200 hli conductive siv lead ua thiab substrate npaj, kev tshawb fawb tau optimized qhov kub thiab txias teb tsim rau loj crystalgrowth, ua 200 hli conductive SiC siv lead ua loj hlob, thiab tswj doping uniformity. Tom qab ua roughly thiab shaping ntawm siv lead ua, ib tug 8-nti hluav taws xob conductive 4H-SiC ingot nrog ib tug txheem txoj kab uas hla tau txais. Tom qab txiav, sib tsoo, polishing, ua kom tau txais SiC 200 hli wafers nrog ib tug tuab ntawm 525um los yog li ntawd.