Kev Cai GaN-on-SiC Epitaxial Wafers (100mm, 150mm) - Ntau SiC Substrate Xaiv (4H-N, HPSI, 4H/6H-P)

Cov Wafers GaN-on-SiC Epitaxial uas Kho Kom Haum (100mm, 150mm) - Ntau Txoj Kev Xaiv SiC Substrate (4H-N, HPSI, 4H/6H-P) Duab Tshwj Xeeb

Kev Piav Qhia Luv:

Peb Cov Khoom Siv GaN-on-SiC Epitaxial Wafers uas Tau Kho Kom Zoo Tshaj Plaws muab kev ua tau zoo tshaj plaws rau kev siv hluav taws xob siab, kev siv zaus siab los ntawm kev sib txuas cov khoom tshwj xeeb ntawm Gallium Nitride (GaN) nrog rau kev ua kom muaj zog thermal thiab lub zog kho tshuab ntawmSilicon Carbide (SiC)Muaj nyob rau hauv 100mm thiab 150mm wafer qhov ntau thiab tsawg, cov wafers no yog tsim los ntawm ntau yam SiC substrate xaiv, suav nrog 4H-N, HPSI, thiab 4H/6H-P hom, tsim los ua kom tau raws li cov kev cai tshwj xeeb rau cov khoom siv hluav taws xob, RF amplifiers, thiab lwm yam khoom siv semiconductor siab heev. Nrog cov khaubncaws sab nraud povtseg epitaxial customizable thiab cov SiC substrates tshwj xeeb, peb cov wafers yog tsim los xyuas kom meej tias muaj kev ua haujlwm siab, kev tswj hwm thermal, thiab kev ntseeg tau rau cov ntawv thov kev lag luam xav tau.

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Cov yam ntxwv

●Tuab ntawm txheej Epitaxial: Kho tau los ntawm1.0 µmmus rau3.5 µm, optimized rau lub zog siab thiab zaus kev ua tau zoo.

●Cov Kev Xaiv SiC SubstrateMuaj nrog ntau yam SiC substrates, suav nrog:

4H-N: Cov khoom siv Nitrogen-doped zoo 4H-SiC rau kev siv zaus siab thiab muaj zog ntau.
HPSI: High-Purity Semi-Insulating SiC rau cov ntawv thov uas xav tau kev rho tawm hluav taws xob.
4H/6H-PSib xyaw 4H thiab 6H-SiC rau qhov sib npaug ntawm kev ua haujlwm zoo thiab kev ntseeg siab.

●Qhov Loj ntawm WaferMuaj nyob rau hauv100 hlithiab150 hlicov diameters rau kev ua tau ntau yam hauv kev ntsuas thiab kev koom ua ke ntawm cov khoom siv.

●High Breakdown Voltage: GaN ntawm SiC thev naus laus zis muab lub zog tawg siab, ua kom muaj kev ua tau zoo hauv cov ntawv thov muaj zog siab.

●Kev Ua Kub SiabSiC lub thermal conductivity (kwv yees li 490 W/m·K) ua kom muaj kev kub hnyiab zoo heev rau cov kev siv fais fab ntau.

Cov Lus Qhia Txog Kev Siv

Cov Qauv	Tus nqi
Wafer Txoj Kab uas hla	100 hli, 150 hli
Epitaxial Txheej Thickness	1.0 µm – 3.5 µm (kho tau)
Hom SiC Substrate	4H-N, HPSI, 4H/6H-P
SiC Kev Ua Kub	490 W/m·K
SiC Resistivity	4H-N: 10^6 Ω·cm,HPSISemi-Insulating,4H/6H-PSib xyaw 4H/6H
GaN Txheej Thickness	1.0 µm – 2.0 µm
Kev Ntsuas GaN ntawm Tus Neeg Nqa Khoom	10^18 cm^-3 txog 10^19 cm^-3 (hloov kho tau)
Qhov Zoo Ntawm Wafer	RMS Roughness: < 1 nm
Kev Nthuav Dav ntawm Qhov Dislocation	< 1 x 10^6 cm^-2
Wafer Bow	< 50 µm
Wafer Flatness	< 5 µm
Kub Tshaj Plaws Ua Haujlwm	400 ° C (ib txwm rau GaN-on-SiC li)

Cov ntawv thov

●Cov Khoom Siv Hluav Taws Xob:Cov wafer GaN-on-SiC muab kev ua haujlwm zoo thiab kev tso cua sov tawm, ua rau lawv zoo tagnrho rau cov amplifiers fais fab, cov khoom siv hloov hluav taws xob, thiab cov hluav taws xob-inverter circuits siv hauv cov tsheb fais fab, cov tshuab hluav taws xob rov ua dua tshiab, thiab cov tshuab kev lag luam.
●RF Fais Fab Amplifiers:Kev sib xyaw ua ke ntawm GaN thiab SiC yog qhov zoo meej rau cov kev siv RF siab, muaj zog siab xws li kev sib txuas lus, kev sib txuas lus satellite, thiab radar systems.
● Kev Tshawb Fawb Txog Huab Cua thiab Kev Tiv Thaiv:Cov wafers no yog tsim rau cov thev naus laus zis aerospace thiab kev tiv thaiv uas xav tau cov khoom siv hluav taws xob muaj zog thiab cov kab ke sib txuas lus uas tuaj yeem ua haujlwm hauv qab cov xwm txheej hnyav.
● Daim Ntawv Thov Tsheb:Zoo tagnrho rau cov tshuab fais fab ua haujlwm siab hauv cov tsheb fais fab (EVs), cov tsheb sib xyaw (HEVs), thiab cov chaw them hluav taws xob, ua rau muaj kev hloov pauv hluav taws xob thiab kev tswj hwm zoo.
●Cov Tub Rog thiab Radar Systems:GaN-on-SiC wafers siv rau hauv cov kab ke radar rau lawv qhov kev ua haujlwm siab, kev tswj hwm lub zog, thiab kev ua haujlwm thermal hauv cov chaw xav tau.
●Kev Siv Microwave thiab Millimeter-Wave:Rau cov kab ke sib txuas lus tiam tom ntej, suav nrog 5G, GaN-on-SiC muab kev ua tau zoo tshaj plaws hauv cov microwave muaj zog thiab millimeter-wave ntau yam.

Cov Lus Nug thiab Lus Teb

Q1: Cov txiaj ntsig ntawm kev siv SiC ua lub substrate rau GaN yog dab tsi?

A1:Silicon Carbide (SiC) muaj kev ua tau zoo dua ntawm cov cua sov, lub zog tawg siab, thiab lub zog kho tshuab piv rau cov khoom siv ib txwm muaj xws li silicon. Qhov no ua rau GaN-on-SiC wafers zoo tagnrho rau kev siv hluav taws xob siab, zaus siab, thiab kub siab. Lub SiC substrate pab tshem tawm cov cua sov uas tsim los ntawm GaN cov khoom siv, txhim kho kev ntseeg tau thiab kev ua tau zoo.

Q2: Puas yog cov txheej epitaxial tuab tuaj yeem hloov kho rau cov ntawv thov tshwj xeeb?

A2:Yog, qhov tuab ntawm cov txheej epitaxial tuaj yeem hloov kho tau hauv ntau yam1.0 µm txog 3.5 µm, nyob ntawm seb koj daim ntawv thov xav tau lub zog thiab zaus npaum li cas. Peb tuaj yeem kho qhov tuab ntawm GaN txheej kom ua tau zoo rau cov khoom siv tshwj xeeb xws li cov amplifiers fais fab, RF systems, lossis cov voj voog siab.

Q3: Qhov txawv ntawm 4H-N, HPSI, thiab 4H/6H-P SiC substrates yog dab tsi?

A3:

4H-N: 4H-SiC uas muaj Nitrogen-doped feem ntau yog siv rau cov ntawv thov zaus siab uas xav tau kev ua haujlwm hluav taws xob siab.
HPSI: SiC Uas Muaj Kev Ntshiab Siab Semi-Insulating muab kev cais hluav taws xob, zoo tagnrho rau cov ntawv thov uas xav tau kev coj hluav taws xob tsawg kawg nkaus.
4H/6H-PKev sib xyaw ua ke ntawm 4H thiab 6H-SiC uas sib npaug kev ua tau zoo, muab kev sib xyaw ua ke ntawm kev ua haujlwm siab thiab kev ruaj khov, tsim nyog rau ntau yam kev siv hluav taws xob fais fab.

Q4: Cov GaN-on-SiC wafers no puas haum rau cov ntawv thov muaj zog xws li tsheb fais fab thiab lub zog rov ua dua tshiab?

A4:Yog lawm, GaN-on-SiC wafers zoo rau cov ntawv thov muaj zog xws li tsheb fais fab, lub zog rov ua dua tshiab, thiab cov txheej txheem kev lag luam. Lub zog tawg siab, kev ua kom sov siab, thiab lub peev xwm tswj hwm lub zog ntawm GaN-on-SiC cov khoom siv ua rau lawv ua tau zoo hauv kev hloov pauv hluav taws xob thiab kev tswj hwm hluav taws xob.

Q5: Qhov ceev ntawm qhov dislocation rau cov wafers no yog dab tsi?

A5:Qhov sib txawv ntawm cov GaN-on-SiC wafers no feem ntau yog< 1 x 10^6 cm^-2, uas ua kom muaj kev loj hlob zoo ntawm epitaxial, txo qhov tsis zoo thiab txhim kho kev ua haujlwm ntawm lub cuab yeej thiab kev ntseeg siab.

Q6: Kuv puas tuaj yeem thov kom muaj qhov loj me ntawm wafer lossis SiC substrate hom?

A6:Yog, peb muaj cov wafer loj (100mm thiab 150mm) thiab SiC substrate hom (4H-N, HPSI, 4H/6H-P) kom tau raws li qhov xav tau ntawm koj daim ntawv thov. Thov hu rau peb kom paub ntxiv txog kev xaiv kho kom haum thiab tham txog koj cov kev xav tau.

Q7: GaN-on-SiC wafers ua haujlwm li cas hauv qhov chaw kub heev?

A7:Cov wafer GaN-on-SiC zoo tagnrho rau cov chaw ib puag ncig hnyav vim lawv qhov kev ruaj khov thermal siab, kev tswj hwm fais fab siab, thiab kev ua haujlwm zoo heev. Cov wafers no ua tau zoo hauv qhov kub thiab txias, muaj zog, thiab zaus siab uas feem ntau ntsib hauv kev siv aerospace, kev tiv thaiv, thiab kev lag luam.

Xaus lus

Peb Cov Khoom Siv GaN-on-SiC Epitaxial Wafers uas tau kho kom haum rau koj lub cev muab cov khoom zoo tshaj plaws ntawm GaN thiab SiC los muab kev ua tau zoo tshaj plaws hauv kev siv hluav taws xob siab thiab zaus siab. Nrog ntau txoj kev xaiv SiC substrate thiab cov txheej epitaxial uas koj tuaj yeem hloov kho tau, cov wafers no zoo tagnrho rau cov lag luam uas xav tau kev ua haujlwm zoo, kev tswj hwm thermal, thiab kev ntseeg siab. Txawm hais tias rau cov khoom siv hluav taws xob, RF systems, lossis kev siv tiv thaiv, peb cov wafers GaN-on-SiC muab kev ua tau zoo thiab kev ywj pheej uas koj xav tau.