Cov Khoom Siv SiC Noob Crystal Uas Kho Kom Zoo Dia 205/203/208 4H-N Hom Rau Kev Sib Txuas Lus Optical

Cov Khoom Siv SiC Noob Crystal Uas Kho Kom Zoo Nkauj Dia 205/203/208 4H-N Hom Rau Kev Sib Txuas Lus Optical Duab Tshwj Xeeb

Kev Piav Qhia Luv:

Cov khoom siv lead ua los ntawm SiC (silicon carbide), ua cov khoom tseem ceeb ntawm cov khoom siv semiconductor tiam thib peb, siv lawv cov thermal conductivity siab (4.9 W/cm·K), lub zog tawg siab heev (2–4 MV/cm), thiab bandgap dav (3.2 eV) los ua cov khoom siv tseem ceeb rau optoelectronics, tsheb fais fab tshiab, kev sib txuas lus 5G, thiab kev siv aerospace. Los ntawm cov thev naus laus zis tsim khoom siab heev xws li kev thauj mus los ntawm lub cev (PVT) thiab kua theem epitaxy (LPE), XKH muab cov khoom siv noob 4H/6H-N-hom, semi-insulating, thiab 3C-SiC polytype hauv cov qauv wafer 2–12-nti, nrog cov micropipe densities qis dua 0.3 cm⁻², resistivity xws li 20–23 mΩ·cm, thiab qhov roughness ntawm qhov chaw (Ra) <0.2 nm. Peb cov kev pabcuam suav nrog kev loj hlob heteroepitaxial (piv txwv li, SiC-on-Si), nanoscale precision machining (± 0.1 μm kam rau siab), thiab kev xa khoom sai thoob ntiaj teb, txhawb kom cov neeg siv khoom kov yeej cov teeb meem kev siv tshuab thiab ua kom cov pa roj carbon neutrality thiab kev hloov pauv ntse.

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Cov yam ntxwv

Cov kev tsis sib xws

Silicon carbide noob wafer
Polytype	4H
Qhov yuam kev ntawm kev taw qhia nto	4° mus rau <11-20> ±0.5º
Kev tiv taus	kev hloov kho
Txoj kab uas hla	205 ± 0.5 hli
Qhov tuab	600 ± 50μm
Kev ntxhib	CMP, Ra≤0.2nm
Qhov Ceev ntawm Micropipe	≤1 ib daim/cm2
Cov khawb	≤5, Tag Nrho Ntev ≤2 * Txoj Kab Uas hla
Cov chips ntug / indents	Tsis muaj dab tsi
Lub cim laser pem hauv ntej	Tsis muaj dab tsi
Cov khawb	≤2, Tag Nrho Ntev ≤ Txoj Kab Uas hla
Cov chips ntug / indents	Tsis muaj dab tsi
Cov cheeb tsam ntau hom	Tsis muaj dab tsi
Rov qab laser cim	1 hli (los ntawm ntug sab saud)
Ntug	Chamfer
Ntim Khoom	Cov cassette ntau hom

Cov Yam Ntxwv Tseem Ceeb

1. Cov qauv siv lead ua thiab kev ua haujlwm hluav taws xob

· Kev Ruaj Ntseg Crystallographic: 100% 4H-SiC polytype dominance, xoom multicrystalline inclusions (piv txwv li, 6H/15R), nrog XRD rocking curve full-width ntawm ib nrab-siab tshaj plaws (FWHM) ≤32.7 arcsec.

· Kev Muaj Peev Xwm Nqa Tau Siab: Kev muaj peev xwm ntawm cov hluav taws xob ntawm 5,400 cm²/V·s (4H-SiC) thiab kev muaj peev xwm ntawm qhov ntawm 380 cm²/V·s, ua rau muaj kev tsim cov cuab yeej siv zaus siab.

· Kev Nyuaj Siab ntawm Kev Tawm Hluav Taws Xob: Tiv taus 1 MeV neutron irradiation nrog qhov kev puas tsuaj ntawm 1 × 10¹⁵ n / cm², zoo tagnrho rau kev siv aerospace thiab nuclear.

2. Cov Khoom Siv Thermal thiab Mechanical

· Kev Ua Haujlwm Kub Tshaj Plaws: 4.9 W/cm·K (4H-SiC), peb npaug ntawm silicon, txhawb kev ua haujlwm siab tshaj 200 ° C.

· Tus Nqi Qis Thermal Expansion: CTE ntawm 4.0 × 10⁻⁶ / K (25–1000 ° C), kom ntseeg tau tias muaj kev sib raug zoo nrog cov ntim khoom uas ua los ntawm silicon thiab txo qis kev ntxhov siab thermal.

3. Kev Tswj Xyuas Qhov Tsis Zoo thiab Kev Ua Haujlwm Zoo

· Qhov Ceev ntawm Micropipe: <0.3 cm⁻² (8-nti wafers), qhov ceev ntawm dislocation <1,000 cm⁻² (tau txheeb xyuas los ntawm KOH etching).

· Qhov Zoo Ntawm Qhov Chaw: CMP-polished rau Ra <0.2 nm, ua tau raws li EUV lithography-qib flatness xav tau.

Cov Ntawv Thov Tseem Ceeb

Domain	Cov xwm txheej ntawm daim ntawv thov	Cov Kev Zoo ntawm Kev Siv Tshuab
Kev sib txuas lus optical	100G/400G lasers, silicon photonics hybrid modules	Cov noob InP ua rau muaj qhov sib txawv ntawm bandgap (1.34 eV) thiab Si-based heteroepitaxy, txo qhov poob ntawm optical coupling.
Cov Tsheb Siv Hluav Taws Xob Tshiab	800V cov inverters hluav taws xob siab, cov chargers onboard (OBC)	Cov khoom siv 4H-SiC tiv taus >1,200 V, txo qhov kev poob ntawm kev sib txuas lus los ntawm 50% thiab qhov ntim ntawm lub kaw lus los ntawm 40%.
Kev Sib Txuas Lus 5G	Cov khoom siv RF millimeter-wave (PA/LNA), cov amplifiers fais fab chaw nres tsheb	Cov khoom siv SiC semi-insulating (resistivity >10⁵ Ω·cm) ua rau muaj kev sib koom ua ke ntawm zaus siab (60 GHz+).
Cov Khoom Siv Lag Luam	Cov khoom siv ntsuas kub siab, cov khoom siv hloov pauv tam sim no, cov khoom siv tshuaj ntsuam nuclear	Cov noob InSb (0.17 eV bandgap) xa cov khoom siv magnetic txog li 300% @ 10 T.

Cov Txiaj Ntsig Tseem Ceeb

Cov khoom siv SiC (silicon carbide) noob siv lead ua ke muab kev ua tau zoo tsis sib xws nrog 4.9 W/cm·K thermal conductivity, 2–4 MV/cm breakdown field strength, thiab 3.2 eV wide bandgap, ua rau muaj zog siab, zaus siab, thiab kev siv kub siab. Muaj qhov ceev ntawm xoom micropipe thiab <1,000 cm⁻² dislocation density, cov khoom siv no ua kom ntseeg tau tias muaj kev ntseeg siab hauv cov xwm txheej hnyav. Lawv cov tshuaj inertness thiab CVD-compatible surfaces (Ra <0.2 nm) txhawb nqa kev loj hlob heteroepitaxial siab heev (piv txwv li, SiC-on-Si) rau optoelectronics thiab EV fais fab systems.

Cov Kev Pabcuam XKH:

1. Kev Tsim Khoom Tshwj Xeeb

· Cov Hom Ntawv Wafer Uas Yooj Yim Siv Tau: 2–12-nti wafers nrog cov duab voj voog, duab plaub fab, lossis cov duab txiav raws li koj xav tau (±0.01 hli kev kam rau siab).

· Kev Tswj Xyuas Doping: Kev doping nitrogen (N) thiab txhuas (Al) kom raug ntawm CVD, ua tiav qhov resistivity ntawm 10⁻³ txog 10⁶ Ω·cm.

2. Cov Txheej Txheem Txuj Ci Siab Tshaj Plaws

· Heteroepitaxy: SiC-on-Si (sib xws nrog 8-nti silicon kab) thiab SiC-on-Diamond (thermal conductivity >2,000 W/m·K).

· Kev Txo Qhov Tsis Zoo: Hydrogen etching thiab annealing kom txo cov micropipe/density defects, txhim kho wafer yield mus rau >95%.

3. Cov Txheej Txheem Tswj Xyuas Zoo

· Kev Ntsuas Kawg-rau-Kawg: Raman spectroscopy (polytype verification), XRD (crystallinity), thiab SEM (defect analysis).

· Cov Ntawv Pov Thawj: Ua raws li AEC-Q101 (tsheb), JEDEC (JEDEC-033), thiab MIL-PRF-38534 (qib tub rog).

4. Kev Txhawb Nqa Thoob Ntiaj Teb rau Kev Muab Khoom

· Peev Xwm Tsim Khoom: Cov zis txhua hli >10,000 wafers (60% 8-nti), nrog rau 48-teev kev xa khoom thaum muaj xwm txheej ceev.

· Kev Sib Txuas Lus Logistics: Kev pab them nqi hauv Tebchaws Europe, North America, thiab Asia-Pacific los ntawm kev thauj khoom los ntawm huab cua/dej hiav txwv nrog cov ntim khoom uas tswj tau qhov kub thiab txias.

5. Kev Koom Tes Txhim Kho Kev Siv Tshuab

· Cov Chaw Tshawb Fawb thiab Kev Txhim Kho Ua Ke: Koom tes ua ke rau kev txhim kho cov khoom siv hluav taws xob SiC (piv txwv li, kev koom ua ke ntawm DBC substrate).

· Daim Ntawv Tso Cai IP: Muab daim ntawv tso cai siv thev naus laus zis GaN-on-SiC RF epitaxial growth kom txo cov nqi R&D ntawm cov neeg siv khoom.

Kev Txheeb Xyuas

Cov khoom siv ua los ntawm SiC (silicon carbide) noob siv lead ua, ua ib yam khoom siv tseem ceeb, tab tom hloov kho cov saw hlau thoob ntiaj teb los ntawm kev tshawb pom tshiab hauv kev loj hlob ntawm cov siv lead ua, kev tswj qhov tsis zoo, thiab kev sib koom ua ke sib txawv. Los ntawm kev txuas ntxiv mus rau kev txo qhov tsis zoo ntawm wafer, kev nthuav dav 8-nti ntau lawm, thiab nthuav dav cov platform heteroepitaxial (piv txwv li, SiC-on-Diamond), XKH xa cov kev daws teeb meem zoo, pheej yig rau optoelectronics, lub zog tshiab, thiab kev tsim khoom siab heev. Peb txoj kev cog lus rau kev tsim kho tshiab ua kom cov neeg siv khoom ua tus thawj coj hauv kev tsis muaj pa roj carbon thiab cov txheej txheem ntse, tsav lub sijhawm tom ntej ntawm cov ecosystem semiconductor dav-bandgap.