CVD txoj kev rau kev tsim cov khoom siv SiC purity siab hauv silicon carbide synthesis cub tawg ntawm 1600 ℃
Txoj cai ua haujlwm:
1. Kev muab khoom ua ntej. Cov pa roj silicon (piv txwv li SiH₄) thiab cov pa roj carbon (piv txwv li C₃H₈) raug sib xyaw ua ke thiab pub rau hauv chav tshuaj tiv thaiv.
2. Kev lwj ntawm qhov kub siab: Thaum kub siab txog 1500 ~ 2300 ℃, qhov kev lwj ntawm cov roj ua rau muaj Si thiab C active atoms.
3. Kev cuam tshuam ntawm qhov chaw: Si thiab C atoms raug tso rau ntawm qhov chaw substrate los tsim ib txheej SiC siv lead ua.
4. Kev loj hlob ntawm cov siv lead ua: Los ntawm kev tswj hwm qhov kub thiab txias, cov roj ntws thiab siab, kom ua tiav kev loj hlob raws li c axis lossis a axis.
Cov Ntsiab Lus Tseem Ceeb:
Kub: 1600 ~ 2200 ℃ (> 2000 ℃ rau 4H-SiC)
· Siab: 50 ~ 200mbar (siab qis kom txo cov pa nucleation)
· Qhov piv ntawm cov roj: Si/C≈1.0~1.2 (kom tsis txhob muaj qhov tsis zoo ntawm Si lossis C)
Cov yam ntxwv tseem ceeb:
(1) Qhov zoo ntawm cov siv lead ua
Qhov ceev tsis zoo: qhov ceev ntawm microtubule < 0.5cm⁻², qhov ceev ntawm dislocation <10⁴ cm⁻².
Kev tswj hom polycrystalline: tuaj yeem loj hlob 4H-SiC (mainstream), 6H-SiC, 3C-SiC thiab lwm hom siv lead ua.
(2) Kev ua tau zoo ntawm cov khoom siv
Kev ruaj khov kub: graphite induction cua sov lossis cua sov tiv taus, kub > 2300 ℃.
Kev tswj hwm kev sib xws: qhov kub thiab txias hloov pauv ± 5 ℃, kev loj hlob ntawm 10 ~ 50μm / h.
Lub kaw lus roj: Lub ntsuas qhov ntsuas loj (MFC) uas raug siab, qhov huv ntawm roj ≥99.999%.
(3) Cov txiaj ntsig ntawm kev siv tshuab
Kev huv siab: Qhov concentration ntawm cov khoom tsis huv ntawm keeb kwm yav dhau <10¹⁶ cm⁻³ (N, B, thiab lwm yam).
Loj loj: Txhawb nqa 6 "/8" SiC substrate kev loj hlob.
(4) Kev siv hluav taws xob thiab tus nqi
Kev siv hluav taws xob ntau (200 ~ 500kW · h ib lub cub tawg), suav txog 30% ~ 50% ntawm tus nqi tsim khoom ntawm SiC substrate.
Cov ntawv thov tseem ceeb:
1. Cov khoom siv hluav taws xob semiconductor: SiC MOSFETs rau kev tsim cov tsheb fais fab thiab cov photovoltaic inverters.
2. Rf ntaus ntawv: 5G chaw nres tsheb GaN-on-SiC epitaxial substrate.
3. Cov khoom siv ib puag ncig hnyav heev: cov ntsuas kub siab rau cov chaw tsim hluav taws xob aerospace thiab nuclear fais fab nroj tsuag.
Kev qhia tshwj xeeb:
| Cov Lus Qhia Tshwj Xeeb | Cov ntsiab lus |
| Qhov Loj (L × W × H) | 4000 x 3400 x 4300 hli los yog kho kom haum |
| Lub qhov cub tawg chamber txoj kab uas hla | 1100 hli |
| Muaj peev xwm thauj khoom | 50kg |
| Qhov txwv tsis pub nqus tsev kawm ntawv | 10-2Pa (2 teev tom qab lub twj tso kua mis molecular pib) |
| Qhov nce siab ntawm chav tsev | ≤10Pa / h (tom qab calcination) |
| Lub hau cua sov qis dua nqa stroke | 1500 hli |
| Txoj kev cua sov | Kev kub hnyiab induction |
| Qhov kub siab tshaj plaws hauv lub cub tawg | 2400°C |
| Lub zog cua sov | 2X40kW |
| Kev ntsuas kub | Kev ntsuas kub infrared ob xim |
| Qhov kub thiab txias | 900 ~ 3000 ℃ |
| Kev tswj qhov kub thiab txias raug | ±1°C |
| Tswj qhov siab ntau yam | 1 ~ 700mbar |
| Kev Tswj Xyuas Siab | 1 ~ 5mbar ± 0.1mbar; 5 ~ 100mbar ± 0.2mbar; 100 ~ 700mbar ± 0.5mbar |
| Txoj kev thauj khoom | Kev thauj khoom qis dua; |
| Kev teeb tsa xaiv tau | Ob chav ntsuas kub, tshem tawm lub forklift. |
Cov Kev Pabcuam XKH:
XKH muab kev pabcuam puv ntoob rau silicon carbide CVD furnaces, suav nrog kev kho cov khoom siv (tsim thaj chaw kub, teeb tsa roj), kev tsim cov txheej txheem (tswj siv lead ua, kho qhov tsis zoo), kev cob qhia kev txawj ntse (kev ua haujlwm thiab kev txij nkawm) thiab kev txhawb nqa tom qab muag (muab cov khoom seem ntawm cov khoom tseem ceeb, kuaj mob deb) los pab cov neeg siv khoom ua tiav cov khoom siv SiC zoo. Thiab muab cov kev pabcuam txhim kho cov txheej txheem kom txuas ntxiv txhim kho cov khoom siv lead ua thiab kev loj hlob zoo.





