N-Hom SiC ntawm Si Composite Substrates Dia6inch
| 等级Qib | Ua 级 | P 级 | D 级 |
| Qib BPD qis | Qib Tsim Khoom | Qib Dummy | |
| 直径Txoj kab uas hla | 150.0 hli ± 0.25 hli | ||
| 厚度Qhov tuab | 500 μm ± 25μm | ||
| 晶片方向Kev Taw Qhia Wafer | Tawm ntawm txoj kab: 4.0° mus rau <11-20> ±0.5° rau 4H-N Ntawm txoj kab: <0001> ±0.5° rau 4H-SI | ||
| 主定位边方向Chav Tsev Tseem Ceeb | {10-10}±5.0° | ||
| 主定位边长度Qhov Ntev Tiaj Tus Thawj | 47.5 hli ± 2.5 hli | ||
| 边缘Kev zam ntug | 3 hli | ||
| 总厚度变化/弯曲度/翘曲度 TTV/How / Warp | ≤15μm / ≤40μm / ≤60μm | ||
| 微管密度和基面位错MPD&BPD | MPD≤1 cm-2 | MPD≤5 cm-2 | MPD≤15 cm-2 |
| BPD≤1000cm-2 | |||
| 电阻率Kev tiv taus | ≥1E5 Ω·cm | ||
| 表面粗糙度Kev ntxhib | Polish Ra≤1 nm | ||
| CMP Ra≤0.5 nm | |||
| 裂纹(强光灯观测) # | Tsis muaj dab tsi | Tag nrho ntev ≤10mm, ib qho ntev ≤2mm | |
| Cov kab nrib pleb los ntawm lub teeb ci ntsa iab | |||
| 六方空洞 (强光灯观测)* | Thaj chaw sib sau ua ke ≤1% | Thaj chaw sib sau ua ke ≤5% | |
| Cov Phaj Hex los ntawm lub teeb ci ntsa iab | |||
| ntau(强光灯观测)* | Tsis muaj dab tsi | Thaj chaw sib sau ua ke ≤ 5% | |
| Cov Cheeb Tsam Polytype los ntawm lub teeb ci ntsa iab | |||
| 划痕(强光灯观测)*& | 3 qhov khawb rau 1 × wafer txoj kab uas hla | 5 khawb rau 1 × wafer txoj kab uas hla | |
| Cov khawb los ntawm lub teeb ci ntsa iab | qhov ntev tag nrho | qhov ntev tag nrho | |
| 崩边# Ntug chip | Tsis muaj dab tsi | 5 tso cai, ≤1 hli txhua | |
| 表面污染物 (强光灯观测) | Tsis muaj dab tsi | ||
| Kev kis kab mob los ntawm lub teeb ci ntsa iab | |||
Daim duab qhia ntxaws ntxaws
