Sapphire yog ib lub siv lead ua los ntawm alumina, koom nrog rau lub cev siv lead ua tripartite, cov qauv hexagonal, nws cov qauv siv lead ua yog tsim los ntawm peb lub atoms oxygen thiab ob lub txhuas atoms hauv covalent bond hom, teeb tsa ze heev, nrog cov saw hlau sib txuas thiab lub zog lattice, thaum nws sab hauv siv lead ua yuav luag tsis muaj impurities lossis qhov tsis zoo, yog li nws muaj kev rwb thaiv hluav taws xob zoo heev, pob tshab, kev ua haujlwm thermal zoo thiab cov yam ntxwv rigidity siab. Siv dav ua qhov rai kho qhov muag thiab cov ntaub ntawv ua haujlwm siab. Txawm li cas los xij, cov qauv molecular ntawm sapphire yog complex thiab muaj anisotropy, thiab qhov cuam tshuam rau cov khoom sib xws kuj txawv heev rau kev ua thiab siv cov lus qhia siv lead ua sib txawv, yog li kev siv kuj txawv. Feem ntau, sapphire substrates muaj nyob rau hauv C, R, A thiab M dav hlau.
Daim ntawv thov ntawmC-dav hlau sapphire wafer
Gallium nitride (GaN) ua ib lub semiconductor tiam thib peb uas muaj bandgap dav, muaj qhov sib txawv ntawm bandgap dav, muaj zog atomic bond, thermal conductivity siab, tshuaj lom neeg ruaj khov zoo (yuav luag tsis corroded los ntawm cov kua qaub) thiab muaj zog tiv thaiv irradiation, thiab muaj kev cia siab dav hauv kev siv optoelectronics, cov khoom siv kub thiab fais fab thiab cov khoom siv microwave zaus siab. Txawm li cas los xij, vim yog qhov melting point siab ntawm GaN, nws nyuaj rau tau txais cov ntaub ntawv siv lead ua loj, yog li txoj hauv kev feem ntau yog ua kom muaj kev loj hlob heteroepitaxy ntawm lwm cov substrates, uas muaj cov kev xav tau siab dua rau cov ntaub ntawv substrate.
Piv nrog rau qhovsapphire substratenrog rau lwm lub ntsej muag siv lead ua, qhov sib txawv ntawm C-dav hlau (<0001> orientation) sapphire wafer thiab cov yeeb yaj kiab tso rau hauv pawg Ⅲ-Ⅴ thiab Ⅱ-Ⅵ (xws li GaN) yog qhov me me, thiab qhov sib txawv ntawm ob thiabCov yeeb yaj kiab AlNuas siv tau ua txheej buffer kuj me dua, thiab nws ua tau raws li qhov yuav tsum tau ua ntawm kev tiv taus kub siab hauv cov txheej txheem GaN crystallization. Yog li ntawd, nws yog cov khoom siv substrate rau GaN kev loj hlob, uas siv tau los ua cov leds dawb / xiav / ntsuab, laser diodes, infrared detectors thiab lwm yam.
Nws tsim nyog hais tias zaj duab xis GaN uas loj hlob ntawm C-dav hlau sapphire substrate loj hlob raws nws txoj kab polar, uas yog, qhov kev taw qhia ntawm C-axis, uas tsis yog tsuas yog cov txheej txheem loj hlob thiab cov txheej txheem epitaxy, tus nqi qis dua, cov khoom siv lub cev thiab tshuaj ruaj khov, tab sis kuj ua tau zoo dua. Cov atoms ntawm C-oriented sapphire wafer raug sib txuas ua ke hauv O-al-al-o-al-O, thaum M-oriented thiab A-oriented sapphire crystals raug sib txuas ua ke hauv al-O-al-O. Vim tias Al-Al muaj zog sib txuas qis dua thiab kev sib txuas tsis muaj zog dua li Al-O, piv nrog M-oriented thiab A-oriented sapphire crystals, Kev ua cov txheej txheem ntawm C-sapphire feem ntau yog qhib Al-Al tus yuam sij, uas yooj yim dua rau kev ua tiav, thiab tuaj yeem tau txais qhov zoo dua ntawm qhov chaw, thiab tom qab ntawd tau txais gallium nitride epitaxial zoo dua, uas tuaj yeem txhim kho qhov zoo ntawm ultra-high brightness dawb / xiav LED. Ntawm qhov tod tes, cov yeeb yaj kiab uas loj hlob raws C-axis muaj cov teebmeem polarization spontaneous thiab piezoelectric, ua rau muaj lub zog hluav taws xob sab hauv cov yeeb yaj kiab (cov txheej txheem quantum Wells), uas ua rau txo qis qhov ua tau zoo ntawm GaN zaj duab xis.
A-dav hlau sapphire waferdaim ntawv thov
Vim nws muaj kev ua tau zoo heev, tshwj xeeb tshaj yog kev xa tawm zoo heev, sapphire ib leeg siv lead ua ke tuaj yeem txhim kho qhov cuam tshuam infrared, thiab dhau los ua cov khoom siv qhov rai nruab nrab infrared zoo tagnrho, uas tau siv dav hauv cov khoom siv tub rog photoelectric. Qhov twg A sapphire yog lub dav hlau polar (C dav hlau) hauv qhov kev taw qhia ib txwm ntawm lub ntsej muag, yog qhov chaw tsis-polar. Feem ntau, qhov zoo ntawm A-oriented sapphire siv lead ua ke zoo dua li ntawm C-oriented siv lead ua ke, nrog tsawg dua dislocation, tsawg dua Mosaic qauv thiab ntau dua cov qauv siv lead ua ke tiav, yog li nws muaj kev ua tau zoo dua lub teeb kis tau zoo dua. Tib lub sijhawm, vim yog Al-O-Al-O atomic bonding hom ntawm lub dav hlau a, qhov nyuaj thiab hnav tsis kam ntawm A-oriented sapphire yog siab dua li ntawm C-oriented sapphire. Yog li ntawd, A-directional chips feem ntau yog siv ua cov ntaub ntawv qhov rai; Tsis tas li ntawd xwb, A sapphire kuj muaj cov khoom siv dielectric tsis tu ncua thiab cov khoom rwb thaiv tsev siab, yog li nws tuaj yeem siv rau cov thev naus laus zis hybrid microelectronics, tab sis kuj rau kev loj hlob ntawm cov neeg coj zoo heev, xws li kev siv TlBaCaCuO (TbBaCaCuO), Tl-2212, kev loj hlob ntawm cov yeeb yaj kiab heterogeneous epitaxial superconducting ntawm cerium oxide (CeO2) sapphire composite substrate. Txawm li cas los xij, kuj vim yog lub zog loj ntawm Al-O, nws nyuaj rau ua tiav.
Daim ntawv thov ntawmR /M dav hlau sapphire wafer
Lub R-dav hlau yog qhov chaw tsis yog polar ntawm sapphire, yog li qhov kev hloov pauv ntawm R-dav hlau txoj haujlwm hauv lub cuab yeej sapphire muab nws cov khoom sib txawv, thermal, hluav taws xob, thiab optical. Feem ntau, R-surface sapphire substrate yog qhov nyiam rau heteroepitaxial deposition ntawm silicon, feem ntau rau semiconductor, microwave thiab microelectronics integrated circuit daim ntawv thov, hauv kev tsim cov hlau lead, lwm yam khoom superconducting, cov resistors siab tsis kam, gallium arsenide kuj tseem siv tau rau R-hom substrate kev loj hlob. Tam sim no, nrog rau qhov nrov ntawm cov xov tooj ntse thiab cov ntsiav tshuaj computer systems, R-face sapphire substrate tau hloov cov khoom siv SAW compound uas twb muaj lawm siv rau cov xov tooj ntse thiab cov ntsiav tshuaj computers, muab cov substrate rau cov khoom siv uas tuaj yeem txhim kho kev ua tau zoo.
Yog tias muaj kev ua txhaum cai, tiv tauj rho tawm
Lub sijhawm tshaj tawm: Lub Xya Hli-16-2024