Cov ntawv thov silicon carbide substrate uas ua rau muaj kev sib txhuam thiab ib nrab rwb thaiv tsev

p1

Cov silicon carbide substrate muab faib ua semi-insulating hom thiab conductive hom. Tam sim no, cov lus qhia tseem ceeb ntawm semi-insulated silicon carbide substrate cov khoom yog 4 nti. Hauv kev lag luam conductive silicon carbide, cov lus qhia tam sim no ntawm cov khoom substrate yog 6 nti.

Vim yog cov ntawv thov downstream hauv thaj teb RF, cov khoom siv SiC semi-insulated thiab cov ntaub ntawv epitaxial raug tswj hwm kev xa tawm los ntawm US Department of Commerce. Semi-insulated SiC ua substrate yog cov khoom siv zoo tshaj plaws rau GaN heteroepitaxy thiab muaj cov kev cia siab tseem ceeb hauv thaj teb microwave. Piv nrog rau qhov tsis sib xws ntawm sapphire 14% thiab Si 16.9%, qhov tsis sib xws ntawm SiC thiab GaN cov ntaub ntawv tsuas yog 3.4%. Ua ke nrog qhov ua tau zoo ntawm SiC, Lub zog ua haujlwm siab LED thiab GaN zaus siab thiab cov khoom siv microwave siab uas nws npaj muaj qhov zoo heev hauv radar, cov khoom siv microwave siab thiab 5G kev sib txuas lus.

Kev tshawb nrhiav thiab kev txhim kho ntawm cov khoom siv SiC semi-insulated yeej ib txwm yog qhov tseem ceeb ntawm kev tshawb nrhiav thiab kev txhim kho ntawm SiC ib leeg siv lead ua substrate. Muaj ob qhov teeb meem tseem ceeb hauv kev loj hlob cov ntaub ntawv SiC semi-insulated:

1) Txo cov khoom tsis huv ntawm N2 uas tau tsim los ntawm graphite crucible, thermal insulation adsorption thiab doping hauv hmoov;

2) Thaum ua kom ntseeg tau tias qhov zoo thiab cov khoom siv hluav taws xob ntawm cov siv lead ua, qhov chaw tob tob tau qhia kom them cov khoom seem tsis huv nrog cov haujlwm hluav taws xob.

Tam sim no, cov chaw tsim khoom uas muaj peev xwm tsim cov khoom siv SiC semi-insulated feem ntau yog SICC Co, Semisic Crystal Co, Tanke Blue Co, Hebei Synlight Crystal Co., Ltd.

p2

Cov siv lead ua los ntawm SiC yog ua tiav los ntawm kev txhaj cov nitrogen rau hauv huab cua uas loj hlob. Cov khoom siv silicon carbide conductive feem ntau yog siv rau hauv kev tsim cov khoom siv fais fab, cov khoom siv fais fab silicon carbide nrog cov hluav taws xob siab, tam sim no siab, kub siab, zaus siab, poob qis thiab lwm yam zoo tshwj xeeb, yuav txhim kho kev siv cov khoom siv fais fab silicon uas twb muaj lawm, muaj qhov cuam tshuam loj thiab dav rau thaj chaw ntawm kev hloov pauv hluav taws xob zoo. Cov chaw siv tseem ceeb yog cov tsheb fais fab / cov khoom them hluav taws xob, lub zog tshiab photovoltaic, kev thauj mus los ntawm tsheb ciav hlau, lub grid ntse thiab lwm yam. Vim tias cov khoom siv conductive feem ntau yog cov khoom siv fais fab hauv cov tsheb fais fab, photovoltaic thiab lwm yam teb, qhov kev cia siab ntawm daim ntawv thov yog dav dua, thiab cov chaw tsim khoom muaj ntau dua.

p3

Hom siv lead ua los ntawm silicon carbide: Cov qauv zoo tshaj plaws ntawm 4H crystalline silicon carbide tuaj yeem muab faib ua ob pawg, ib qho yog hom siv lead ua los ntawm cubic silicon carbide ntawm sphalerite, hu ua 3C-SiC lossis β-SiC, thiab lwm qhov yog cov qauv hexagonal lossis pob zeb diamond ntawm cov qauv loj, uas yog ib txwm muaj ntawm 6H-SiC, 4H-sic, 15R-SiC, thiab lwm yam, hu ua α-SiC. 3C-SiC muaj qhov zoo ntawm kev tiv taus siab hauv cov khoom siv tsim khoom. Txawm li cas los xij, qhov tsis sib xws siab ntawm Si thiab SiC lattice constants thiab thermal expansion coefficients tuaj yeem ua rau muaj ntau qhov tsis zoo hauv 3C-SiC epitaxial txheej. 4H-SiC muaj peev xwm zoo hauv kev tsim MOSFETs, vim tias nws txoj kev loj hlob siv lead ua thiab cov txheej txheem loj hlob epitaxial txheej zoo dua, thiab hais txog kev txav mus los ntawm hluav taws xob, 4H-SiC siab dua 3C-SiC thiab 6H-SiC, muab cov yam ntxwv microwave zoo dua rau 4H-SiC MOSFETs.

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Lub sijhawm tshaj tawm: Lub Xya Hli-16-2024