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Ib Phau Ntawv Qhia Txog Silicon Carbide Wafers/SiC wafer

Cov ntsiab lus ntawm SiC wafer

 Cov silicon carbide (SiC) waferstau dhau los ua lub substrate xaiv rau cov khoom siv hluav taws xob muaj zog, zaus siab, thiab kub siab thoob plaws hauv kev lag luam tsheb, lub zog rov ua dua tshiab, thiab aerospace. Peb cov khoom lag luam suav nrog cov polytypes tseem ceeb thiab cov phiaj xwm doping—nitrogen-doped 4H (4H-N), high-purity semi-insulating (HPSI), nitrogen-doped 3C (3C-N), thiab p-hom 4H/6H (4H/6H-P)—muaj nyob rau hauv peb qib zoo: PRIME (polished tag nrho, cov khoom siv qib), DUMMY (lapped lossis unpolished rau kev sim txheej txheem), thiab RESEARCH (kev cai epi txheej thiab doping profiles rau R&D). Wafer diameters span 2″, 4″, 6″, 8″, thiab 12″ kom haum rau ob qho tib si cov cuab yeej qub thiab cov fabs siab heev. Peb kuj muab monocrystalline boules thiab cov noob crystals uas tau taw qhia meej los txhawb kev loj hlob ntawm crystal hauv tsev.

Peb cov 4H-N wafers muaj cov khoom siv ceev ceev ntawm 1 × 10¹⁶ txog 1 × 10¹⁹ cm⁻³ thiab resistivities ntawm 0.01–10 Ω·cm, xa cov electron mobility zoo heev thiab cov teb tawg saum toj no 2 MV/cm—zoo tagnrho rau Schottky diodes, MOSFETs, thiab JFETs. HPSI substrates tshaj 1 × 10¹² Ω·cm resistivity nrog micropipe densities qis dua 0.1 cm⁻², ua kom muaj qhov xau tsawg kawg nkaus rau RF thiab microwave li. Cubic 3C-N, muaj nyob rau hauv 2″ thiab 4″ hom ntawv, ua rau heteroepitaxy ntawm silicon thiab txhawb nqa cov ntawv thov photonic thiab MEMS tshiab. P-hom 4H/6H-P wafers, doped nrog txhuas rau 1 × 10¹⁶–5 × 10¹⁸ cm⁻³, pab txhawb cov qauv khoom siv sib txuas.

SiC wafer, PRIME wafers raug tshuaj lom neeg-mechanical polishing rau <0.2 nm RMS qhov roughness ntawm qhov chaw, tag nrho cov thickness variation hauv qab 3 µm, thiab bow <10 µm. DUMMY substrates ua kom nrawm dua kev sib dhos thiab kev ntim khoom, thaum RESEARCH wafers muaj epi-txheej thicknesses ntawm 2–30 µm thiab bespoke doping. Tag nrho cov khoom tau ntawv pov thawj los ntawm X-ray diffraction (rocking curve <30 arcsec) thiab Raman spectroscopy, nrog rau kev sim hluav taws xob—Kev ntsuas Hall, C–V profiling, thiab micropipe scanning—ua kom ntseeg tau tias JEDEC thiab SEMI ua raws li.

Cov noob pob uas muaj txoj kab uas hla mus txog 150 hli raug cog los ntawm PVT thiab CVD nrog cov qhov sib txawv ntawm qhov sib txawv hauv qab 1 × 10³ cm⁻² thiab cov lej micropipe tsawg. Cov noob siv lead ua raug txiav hauv 0.1° ntawm c-axis kom lav qhov kev loj hlob rov ua dua thiab cov txiaj ntsig zoo ntawm kev txiav.

Los ntawm kev sib koom ua ke ntau hom polytypes, cov doping variants, cov qib zoo, SiC wafer qhov ntau thiab tsawg, thiab kev tsim khoom hauv tsev boule thiab noob-crystal, peb lub platform SiC substrate ua kom cov saw hlau muab khoom yooj yim dua thiab ua kom nrawm dua kev tsim khoom siv rau cov tsheb fais fab, cov smart grids, thiab cov ntawv thov ib puag ncig hnyav.

Cov ntsiab lus ntawm SiC wafer

 Cov silicon carbide (SiC) waferstau dhau los ua SiC substrate xaiv rau cov khoom siv hluav taws xob muaj zog, zaus siab, thiab kub siab thoob plaws hauv kev lag luam tsheb, lub zog rov ua dua tshiab, thiab aerospace. Peb cov khoom lag luam suav nrog cov polytypes tseem ceeb thiab cov phiaj xwm doping—nitrogen-doped 4H (4H-N), high-purity semi-insulating (HPSI), nitrogen-doped 3C (3C-N), thiab p-hom 4H/6H (4H/6H-P)—muaj nyob rau hauv peb qib zoo: SiC waferPRIME (txhua yam ci ntsa iab, cov khoom siv qib), DUMMY (lapped lossis tsis ci ntsa iab rau kev sim ua haujlwm), thiab RESEARCH (kev cai epi txheej thiab cov ntaub ntawv doping rau R&D). SiC Wafer txoj kab uas hla span 2″, 4″, 6″, 8″, thiab 12″ kom haum rau ob qho tib si cov cuab yeej qub thiab cov fabs siab heev. Peb kuj muab cov monocrystalline boules thiab cov noob siv lead ua kom raug los txhawb kev loj hlob ntawm cov siv lead ua hauv tsev.

Peb cov 4H-N SiC wafers muaj cov khoom siv thauj khoom ntawm 1 × 10¹⁶ txog 1 × 10¹⁹ cm⁻³ thiab resistivities ntawm 0.01–10 Ω·cm, xa cov electron mobility zoo heev thiab cov teb tawg saum toj no 2 MV/cm—zoo tagnrho rau Schottky diodes, MOSFETs, thiab JFETs. HPSI substrates tshaj 1 × 10¹² Ω·cm resistivity nrog micropipe densities qis dua 0.1 cm⁻², ua kom muaj qhov xau tsawg kawg nkaus rau RF thiab microwave li. Cubic 3C-N, muaj nyob rau hauv 2″ thiab 4″ hom ntawv, ua rau heteroepitaxy ntawm silicon thiab txhawb nqa cov ntawv thov photonic thiab MEMS tshiab. SiC wafer P-hom 4H/6H-P wafers, doped nrog txhuas rau 1 × 10¹⁶–5 × 10¹⁸ cm⁻³, pab txhawb cov qauv khoom siv sib txuas.

Cov wafer SiC wafer PRIME wafers raug tshuaj lom neeg-mechanical polishing rau <0.2 nm RMS qhov roughness ntawm qhov chaw, tag nrho cov tuab sib txawv hauv qab 3 µm, thiab bow <10 µm. DUMMY substrates ua kom nrawm dua kev sib dhos thiab kev ntim khoom, thaum RESEARCH wafers muaj epi-txheej tuab ntawm 2–30 µm thiab bespoke doping. Txhua yam khoom tau ntawv pov thawj los ntawm X-ray diffraction (rocking curve <30 arcsec) thiab Raman spectroscopy, nrog rau kev sim hluav taws xob—Kev ntsuas Hall, C–V profiling, thiab micropipe scanning—ua kom ntseeg tau tias JEDEC thiab SEMI ua raws li.

Cov noob pob uas muaj txoj kab uas hla mus txog 150 hli raug cog los ntawm PVT thiab CVD nrog cov qhov sib txawv ntawm qhov sib txawv hauv qab 1 × 10³ cm⁻² thiab cov lej micropipe tsawg. Cov noob siv lead ua raug txiav hauv 0.1° ntawm c-axis kom lav qhov kev loj hlob rov ua dua thiab cov txiaj ntsig zoo ntawm kev txiav.

Los ntawm kev sib koom ua ke ntau hom polytypes, cov doping variants, cov qib zoo, SiC wafer qhov ntau thiab tsawg, thiab kev tsim khoom hauv tsev boule thiab noob-crystal, peb lub platform SiC substrate ua kom cov saw hlau muab khoom yooj yim dua thiab ua kom nrawm dua kev tsim khoom siv rau cov tsheb fais fab, cov smart grids, thiab cov ntawv thov ib puag ncig hnyav.

Daim duab ntawm SiC wafer

Daim ntawv qhia txog 6 nti 4H-N hom SiC wafer

 

Cov ntaub ntawv ntawm 6 nti SiC wafers
Cov Qauv Sub-Parameter Qib Z Qib P Qib D
Txoj kab uas hla   149.5–150.0 hli 149.5–150.0 hli 149.5–150.0 hli
Qhov tuab 4H-N 350 µm ± 15 µm 350 µm ± 25 µm 350 µm ± 25 µm
Qhov tuab 4H-SI 500 µm ± 15 µm 500 µm ± 25 µm 500 µm ± 25 µm
Kev Taw Qhia Wafer   Tawm ntawm txoj kab: 4.0° mus rau <11-20> ±0.5° (4H-N); Ntawm txoj kab: <0001> ±0.5° (4H-SI) Tawm ntawm txoj kab: 4.0° mus rau <11-20> ±0.5° (4H-N); Ntawm txoj kab: <0001> ±0.5° (4H-SI) Tawm ntawm txoj kab: 4.0° mus rau <11-20> ±0.5° (4H-N); Ntawm txoj kab: <0001> ±0.5° (4H-SI)
Qhov Ceev ntawm Micropipe 4H-N ≤ 0.2 cm⁻² ≤ 2 cm⁻² ≤ 15 cm⁻²
Qhov Ceev ntawm Micropipe 4H-SI ≤ 1 cm⁻² ≤ 5 cm⁻² ≤ 15 cm⁻²
Kev tiv taus 4H-N 0.015–0.024 Ω·cm 0.015–0.028 Ω·cm 0.015–0.028 Ω·cm
Kev tiv taus 4H-SI ≥ 1 × 10¹⁰ Ω·cm ≥ 1 × 10⁵ Ω·cm  
Kev Taw Qhia Tiaj Tus Thawj Coj   [10-10] ± 5.0° [10-10] ± 5.0° [10-10] ± 5.0°
Qhov Ntev Tiaj Tus Thawj 4H-N 47.5 hli ± 2.0 hli    
Qhov Ntev Tiaj Tus Thawj 4H-SI Qhov Notch    
Kev Tshem Tawm Ntug     3 hli  
Warp/LTV/TTV/Hneev   ≤2.5 µm / ≤6 µm / ≤25 µm / ≤35 µm ≤5 µm / ≤15 µm / ≤40 µm / ≤60 µm  
Kev ntxhib Polish Ra ≤ 1 nm    
Kev ntxhib CMP Ra ≤ 0.2 nm   Ra ≤ 0.5 nm
Cov Nthuav Ntug   Tsis muaj dab tsi   Qhov ntev tag nrho ≤ 20 hli, ib qho ≤ 2 hli
Cov Phaj Hex   Thaj chaw sib sau ua ke ≤ 0.05% Thaj chaw sib sau ua ke ≤ 0.1% Thaj chaw sib sau ua ke ≤ 1%
Cov Cheeb Tsam Polytype   Tsis muaj dab tsi Thaj chaw sib sau ua ke ≤ 3% Thaj chaw sib sau ua ke ≤ 3%
Cov pa roj carbon uas suav nrog   Thaj chaw sib sau ua ke ≤ 0.05%   Thaj chaw sib sau ua ke ≤ 3%
Cov khawb ntawm qhov chaw   Tsis muaj dab tsi   Qhov ntev tag nrho ≤ 1 × txoj kab uas hla ntawm lub wafer
Cov Chips Ntug   Tsis pub muaj ≥ 0.2 hli dav thiab tob   Txog li 7 daim, ≤ 1 hli txhua daim
TSD (Kev Sib Tsoo Ntawm Cov Ntsia Hlau)   ≤ 500 cm⁻²   Tsis muaj
BPD (Kev puas tsuaj ntawm lub hauv paus dav hlau)   ≤ 1000 cm⁻²   Tsis muaj
Kev Ua Phem Ntawm Qhov Chaw   Tsis muaj dab tsi    
Ntim Khoom   Cov thawv wafer ntau los yog cov thawv wafer ib zaug xwb Cov thawv wafer ntau los yog cov thawv wafer ib zaug xwb Cov thawv wafer ntau los yog cov thawv wafer ib zaug xwb

Daim ntawv qhia txog 4 nti 4H-N hom SiC wafer

 

Cov ntaub ntawv ntawm 4 nti SiC wafer
Cov Qauv Tsis Muaj MPD Ntau Lawm Qib Tsim Khoom Txheem (Qib P) Qib Dummy (Qib D)
Txoj kab uas hla 99.5 hli–100.0 hli
Tuab (4H-N) 350 µm ± 15 µm   350 µm ± 25 µm
Thickness (4H-Si) 500 µm ± 15 µm   500 µm ± 25 µm
Kev Taw Qhia Wafer Tawm ntawm txoj kab: 4.0° mus rau <1120> ±0.5° rau 4H-N; Ntawm txoj kab: <0001> ±0.5° rau 4H-Si    
Qhov Ceev ntawm Cov Kav Dej Me Me (4H-N) ≤0.2 cm⁻² ≤2 cm⁻² ≤15 cm⁻²
Qhov Ceev ntawm Cov Kav Dej Me Me (4H-Si) ≤1 cm⁻² ≤5 cm⁻² ≤15 cm⁻²
Kev tiv taus (4H-N)   0.015–0.024 Ω·cm 0.015–0.028 Ω·cm
Kev Tiv Thaiv (4H-Si) ≥1E10 Ω·cm   ≥1E5 Ω·cm
Kev Taw Qhia Tiaj Tus Thawj Coj   [10-10] ±5.0°  
Qhov Ntev Tiaj Tus Thawj   32.5 hli ±2.0 hli  
Qhov Ntev Thib Ob   18.0 hli ±2.0 hli  
Kev Taw Qhia Qib Thib Ob   Lub ntsej muag silicon tig rau saum: 90 ° CW ntawm lub tiaj tiaj ± 5.0 °  
Kev Tshem Tawm Ntug   3 hli  
LTV/TTV/Bow Warp ≤ 2.5 µm / ≤5 µm / ≤ 15 µm / ≤ 30 µm   ≤ 10 µm / ≤ 15 µm / ≤ 25 µm / ≤ 40 µm
Kev ntxhib Polish Ra ≤1 nm; CMP Ra ≤0.2 nm   Ra ≤0.5 nm
Cov Ntxaij Ntug Los Ntawm Lub Teeb Ci Siab Tsis muaj dab tsi Tsis muaj dab tsi Qhov ntev tag nrho ≤10 hli; ib qho ntev ≤2 hli
Hex Phaj Los Ntawm Lub Teeb Ci Siab Thaj chaw sib sau ua ke ≤0.05% Thaj chaw sib sau ua ke ≤0.05% Thaj chaw sib sau ua ke ≤0.1%
Cov Cheeb Tsam Polytype Los Ntawm Lub Teeb Ci Siab Tsis muaj dab tsi   Thaj chaw sib sau ua ke ≤3%
Cov pa roj carbon uas pom tau Thaj chaw sib sau ua ke ≤0.05%   Thaj chaw sib sau ua ke ≤3%
Cov khawb ntawm cov nplaim silicon los ntawm lub teeb ci ntsa iab Tsis muaj dab tsi   Qhov ntev tag nrho ≤1 wafer txoj kab uas hla
Ntug Chips Los Ntawm Lub Teeb Ci Siab Tsis pub ≥0.2 hli dav thiab tob   5 tso cai, ≤1 hli txhua
Kev Ua Rau Silicon Nto Los Ntawm Lub Teeb Ci Siab Tsis muaj dab tsi    
Kev sib hloov ntawm cov ntsia hlau ≤500 cm⁻² Tsis muaj  
Ntim Khoom Cov thawv wafer ntau los yog cov thawv wafer ib zaug xwb Cov thawv wafer ntau los yog cov thawv wafer ib zaug xwb Cov thawv wafer ntau los yog cov thawv wafer ib zaug xwb

4 nti HPSI hom SiC wafer cov ntaub ntawv ntawv

 

4 nti HPSI hom SiC wafer cov ntaub ntawv ntawv
Cov Qauv Qib Tsim Khoom Xoom MPD (Qib Z) Qib Tsim Khoom Txheem (Qib P) Qib Dummy (Qib D)
Txoj kab uas hla   99.5–100.0 hli  
Thickness (4H-Si) 500 µm ± 20 µm   500 µm ± 25 µm
Kev Taw Qhia Wafer Tawm ntawm txoj kab: 4.0° mus rau <11-20> ±0.5° rau 4H-N; Ntawm txoj kab: <0001> ±0.5° rau 4H-Si
Qhov Ceev ntawm Cov Kav Dej Me Me (4H-Si) ≤1 cm⁻² ≤5 cm⁻² ≤15 cm⁻²
Kev Tiv Thaiv (4H-Si) ≥1E9 Ω·cm   ≥1E5 Ω·cm
Kev Taw Qhia Tiaj Tus Thawj Coj (10-10) ±5.0°
Qhov Ntev Tiaj Tus Thawj 32.5 hli ±2.0 hli
Qhov Ntev Thib Ob 18.0 hli ±2.0 hli
Kev Taw Qhia Qib Thib Ob Lub ntsej muag silicon tig rau saum: 90 ° CW ntawm lub tiaj tiaj ± 5.0 °
Kev Tshem Tawm Ntug   3 hli  
LTV/TTV/Bow Warp ≤ 3 µm / ≤ 5 µm / ≤ 15 µm / ≤ 30 µm   ≤ 10 µm / ≤ 15 µm / ≤ 25 µm / ≤ 40 µm
Qhov ntxhib (C ntsej muag) Polish Ra ≤1 nm  
Qhov ntxhib (Si ntsej muag) CMP Ra ≤0.2 nm Ra ≤0.5 nm
Cov Ntxaij Ntug Los Ntawm Lub Teeb Ci Siab Tsis muaj dab tsi   Qhov ntev tag nrho ≤10 hli; ib qho ntev ≤2 hli
Hex Phaj Los Ntawm Lub Teeb Ci Siab Thaj chaw sib sau ua ke ≤0.05% Thaj chaw sib sau ua ke ≤0.05% Thaj chaw sib sau ua ke ≤0.1%
Cov Cheeb Tsam Polytype Los Ntawm Lub Teeb Ci Siab Tsis muaj dab tsi   Thaj chaw sib sau ua ke ≤3%
Cov pa roj carbon uas pom tau Thaj chaw sib sau ua ke ≤0.05%   Thaj chaw sib sau ua ke ≤3%
Cov khawb ntawm cov nplaim silicon los ntawm lub teeb ci ntsa iab Tsis muaj dab tsi   Qhov ntev tag nrho ≤1 wafer txoj kab uas hla
Ntug Chips Los Ntawm Lub Teeb Ci Siab Tsis pub ≥0.2 hli dav thiab tob   5 tso cai, ≤1 hli txhua
Kev Ua Rau Silicon Nto Los Ntawm Lub Teeb Ci Siab Tsis muaj dab tsi   Tsis muaj dab tsi
Kev Sib Tsoo Ntawm Cov Ntsia Hlau ≤500 cm⁻² Tsis muaj  
Ntim Khoom   Cov thawv wafer ntau los yog cov thawv wafer ib zaug xwb  

Daim ntawv thov SiC wafer

 

  • SiC Wafer Fais Fab Modules rau EV Inverters
    Cov MOSFETs thiab cov diodes uas ua los ntawm SiC wafer zoo ua rau muaj kev poob qis heev. Los ntawm kev siv cov thev naus laus zis SiC wafer, cov modules fais fab no ua haujlwm ntawm qhov hluav taws xob siab dua thiab kub dua, ua rau cov inverters traction zoo dua. Kev koom ua ke SiC wafer tuag rau hauv cov theem fais fab txo qhov yuav tsum tau txias thiab qhov chaw, qhia txog tag nrho lub peev xwm ntawm SiC wafer innovation.

  • Cov Khoom Siv RF Zaus Siab & 5G ntawm SiC Wafer
    Cov RF amplifiers thiab cov keyboards uas tsim los ntawm cov platforms SiC wafer semi-insulating qhia tau tias muaj kev ua tau zoo dua ntawm thermal conductivity thiab breakdown voltage. Lub SiC wafer substrate txo qhov dielectric losses ntawm GHz frequencies, thaum SiC wafer lub zog ntawm cov khoom siv tso cai rau kev ua haujlwm ruaj khov hauv qab lub zog siab, kub siab - ua rau SiC wafer yog lub substrate xaiv rau cov chaw nres tsheb 5G tiam tom ntej thiab cov kab ke radar.

  • Cov Khoom Siv Optoelectronic & LED los ntawm SiC Wafer
    Cov LED xiav thiab UV uas cog rau ntawm SiC wafer substrates tau txais txiaj ntsig los ntawm kev sib phim zoo heev thiab kev tso cua sov tawm. Kev siv cov C-face SiC wafer uas ci ntsa iab ua kom cov khaubncaws sab nraud povtseg epitaxial sib xws, thaum qhov nyuaj ntawm SiC wafer ua rau cov wafer nyias nyias thiab cov khoom siv txhim khu kev qha. Qhov no ua rau SiC wafer yog lub platform mus-rau rau cov ntawv thov LED muaj zog, lub neej ntev.

Cov Lus Nug thiab Lus Teb ntawm SiC wafer

1. Q: SiC wafers raug tsim li cas?


Ib:

Cov khoom siv SiC uas tsim tawmCov Kauj Ruam Kom Paub Ntxiv

  1. Cov khoom siv SiCKev Npaj Khoom Siv Raw

    • Siv hmoov SiC qib ≥5N (cov khoom tsis huv ≤1 ppm).
    • Siv lub lim dej thiab ua ntej ci kom tshem tawm cov pa roj carbon lossis cov nitrogen uas seem.

  1. SiCKev Npaj Cov Noob Crystal

    • Siv ib daim 4H-SiC ib leeg siv lead ua, txiav raws li qhov kev taw qhia 〈0001〉 mus txog ~10 × 10 mm².

    • Kev txhuam kom meej rau Ra ≤0.1 nm thiab cim cov qauv siv lead ua.

  2. SiCKev Loj Hlob PVT (Kev Thauj Mus Los Ntawm Lub Cev)

    • Tso cov graphite crucible: hauv qab nrog SiC hmoov, saum toj nrog noob siv lead ua.

    • Tshem tawm mus rau 10⁻³–10⁻⁵ Torr lossis rov qab ntim nrog helium purity siab ntawm 1 atm.

    • Qhov chaw kub rau thaj tsam 2100–2300 ℃, tswj kom thaj tsam noob txias dua 100–150 ℃.

    • Tswj kev loj hlob ntawm 1–5 hli/teev kom sib npaug qhov zoo thiab qhov ua tau zoo.

  3. SiCKev Ua Kub Hnyiab

    • Ua kom cov SiC ingot uas loj hlob lawm kub ntawm 1600–1800 ℃ rau 4–8 teev.

    • Lub Hom Phiaj: txo cov kev ntxhov siab thermal thiab txo qhov ceev ntawm qhov dislocation.

  4. SiCKev Txiav Wafer

    • Siv lub tshuab txiav hlau pob zeb diamond los txiav cov ingot ua cov wafers tuab 0.5-1 hli.

    • Txo qhov kev co thiab lub zog sab nraud kom tsis txhob muaj cov kab nrib pleb me me.

  5. SiCNcuav mog qab zibKev Sib Tsoo & Kev Txhuam Hniav

    • Kev sib tsoo ntxhibkom tshem tawm qhov puas tsuaj ntawm cov khoom txiav (roughness ~ 10–30 µm).

    • Kev sib tsoo zookom ua tiav qhov tiaj tiaj ≤5 µm.

    • Kev Txhuam Txhuam Tshuaj (CMP)kom ncav cuag daim iav zoo li tiav (Ra ≤0.2 nm).

  6. SiCNcuav mog qab zibKev Ntxuav thiab Kev Tshuaj Xyuas

    • Kev ntxuav ultrasonichauv Piranha tov (H₂SO₄:H₂O₂), DI dej, ces IPA.

    • Kev ntsuas XRD / Raman spectroscopykom paub meej tias muaj polytype (4H, 6H, 3C).

    • Kev cuam tshuam ntawm kev cuam tshuamlos ntsuas qhov tiaj tiaj (<5 µm) thiab warp (<20 µm).

    • Plaub-point probelos sim qhov tsis kam (piv txwv li HPSI ≥10⁹ Ω·cm).

    • Kev tshuaj xyuas qhov tsis zoonyob rau hauv lub teeb polarized microscope thiab khawb tester.

  7. SiCNcuav mog qab zibKev Faib Pawg & Kev Cais

    • Txheeb cov wafers los ntawm polytype thiab hom hluav taws xob:

      • 4H-SiC N-hom (4H-N): qhov concentration ntawm cov khoom thauj 10¹⁶–10¹⁸ cm⁻³

      • 4H-SiC High Purity Semi-Insulating (4H-HPSI): resistivity ≥10⁹ Ω·cm

      • 6H-SiC N-hom (6H-N)

      • Lwm tus: 3C-SiC, P-hom, thiab lwm yam.

  8. SiCNcuav mog qab zibNtim & Kev Xa Khoom

    • Muab tso rau hauv cov thawv wafer uas huv si thiab tsis muaj plua plav.

    • Sau txhua lub thawv nrog txoj kab uas hla, tuab, polytype, qib resistivity, thiab tus lej batch.

      Cov khoom siv SiC

2. Q: Cov txiaj ntsig tseem ceeb ntawm SiC wafers dua li silicon wafers yog dab tsi?


A: Piv rau cov silicon wafers, SiC wafers ua rau:

  • Kev ua haujlwm siab dua(>1,200 V) nrog rau qhov tsis kam rau sab qis dua.

  • Kev ruaj khov kub dua(> 300 ° C) thiab kev tswj hwm thermal zoo dua.

  • Kev hloov pauv sai duanrog rau qhov poob qis dua, txo qhov txias ntawm lub kaw lus thiab qhov loj me ntawm cov hloov hluav taws xob.

4. Q: Cov teeb meem twg feem ntau cuam tshuam rau SiC wafer cov txiaj ntsig thiab kev ua tau zoo?


A: Qhov tsis zoo tseem ceeb hauv SiC wafers suav nrog micropipes, basal plane dislocations (BPDs), thiab khawb ntawm qhov chaw. Micropipes tuaj yeem ua rau lub cuab yeej tsis ua haujlwm zoo; BPDs nce kev tiv thaiv dhau sijhawm; thiab khawb ntawm qhov chaw ua rau wafer tawg lossis kev loj hlob epitaxial tsis zoo. Yog li ntawd, kev tshuaj xyuas nruj thiab kev txo qhov tsis zoo yog qhov tseem ceeb kom ua kom SiC wafer ntau tshaj plaws.

Lub sijhawm tshaj tawm: Lub Rau Hli-30-2025
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