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p-hom 4H/6H-P 3C-N HOM SIC substrate 4 nti 〈111〉± 0.5°Zero MPD

p-hom 4H/6H-P 3C-N HOM SIC substrate 4 nti 〈111〉± 0.5°Zero MPD Duab Tshwj Xeeb
  • p-hom 4H/6H-P 3C-N HOM SIC substrate 4 nti 〈111〉± 0.5°Zero MPD
  • p-hom 4H/6H-P 3C-N HOM SIC substrate 4 nti 〈111〉± 0.5°Zero MPD
  • p-hom 4H/6H-P 3C-N HOM SIC substrate 4 nti 〈111〉± 0.5°Zero MPD
  • p-hom 4H/6H-P 3C-N HOM SIC substrate 4 nti 〈111〉± 0.5°Zero MPD

Kev Piav Qhia Luv:

Lub P-hom 4H/6H-P 3C-N hom SiC substrate, 4-nti nrog 〈111〉± 0.5° orientation thiab Zero MPD (Micro Pipe Defect) qib, yog cov khoom siv semiconductor ua tau zoo tsim los rau kev tsim khoom siv hluav taws xob siab heev. Paub txog nws cov thermal conductivity zoo heev, high breakdown voltage, thiab muaj zog tiv taus kub thiab corrosion, lub substrate no zoo tagnrho rau cov khoom siv hluav taws xob thiab RF daim ntawv thov. Lub Zero MPD qib lav qhov tsis zoo tsawg kawg nkaus, ua kom ntseeg tau tias muaj kev ntseeg siab thiab ruaj khov hauv cov khoom siv ua haujlwm siab. Nws qhov tseeb 〈111〉± 0.5° orientation tso cai rau kev sib dhos raug thaum lub sijhawm tsim khoom, ua rau nws tsim nyog rau cov txheej txheem tsim khoom loj. Lub substrate no siv dav hauv cov khoom siv hluav taws xob kub, high-voltage, thiab high-frequency, xws li cov hloov hluav taws xob, inverters, thiab RF Cheebtsam.


Cov yam ntxwv

4H/6H-P Hom SiC Composite Substrates Cov lus qhia dav dav

4 Silicon txoj kab uas hla ntiCarbide (SiC) Cov Khoom Siv Cov Lus Qhia Tshwj Xeeb

 

Qib Tsis Muaj MPD Ntau Lawm

Qib (Z Qib)

 Kev Tsim Khoom Txheem

Qib (P Qib)

  

Qib Dummy (D Qib)
Txoj kab uas hla 99.5 hli ~ 100.0 hli
Qhov tuab 350 μm ± 25 μm
Kev Taw Qhia Wafer Tawm ntawm txoj kab: 2.0 ° -4.0 ° mus rau [11]2(-)0] ± 0.5° rau 4H/6H-P, On axis:〈111〉± 0.5° rau 3C-N
Qhov Ceev ntawm Micropipe 0 cm-2
Kev tiv taus p-hom 4H/6H-P ≤0.1 Ωꞏcm ≤0.3 Ωꞏcm
n-hom 3C-N ≤0.8 mΩꞏcm ≤1 m Ωꞏcm
Kev Taw Qhia Tiaj Tus Thawj Coj 4H/6H-P -

{1010} ± 5.0°
3C-N -

{110} ± 5.0°
Qhov Ntev Tiaj Tus Thawj 32.5 hli ± 2.0 hli
Qhov Ntev Thib Ob 18.0 hli ± 2.0 hli
Kev Taw Qhia Qib Thib Ob Lub ntsej muag silicon tig rau saum: 90° CW. ntawm Prime tiaj tiaj±5.0°
Kev Tshem Tawm Ntug 3 hli 6 hli
LTV/TTV/Hneev nti /Warp ≤2.5 μm/≤5 μm/≤15 μm/≤30 μm ≤10 μm/≤15 μm/≤25 μm/≤40 μm
Kev ntxhib Polish Ra≤1 nm
CMP Ra≤0.2 nm Ra≤0.5 nm
Cov Ntxaij Ntug Los Ntawm Lub Teeb Ci Siab Tsis muaj dab tsi Qhov ntev tag nrho ≤ 10 hli, ib qho ntev ≤ 2 hli
Hex Phaj Los Ntawm Lub Teeb Ci Siab Thaj chaw sib sau ua ke ≤0.05% Thaj chaw sib sau ua ke ≤0.1%
Cov Cheeb Tsam Polytype Los Ntawm Lub Teeb Ci Siab Tsis muaj dab tsi Thaj chaw sib sau ua ke ≤ 3%
Cov pa roj carbon uas pom tau Thaj chaw sib sau ua ke ≤0.05% Thaj chaw sib sau ua ke ≤3%
Cov khawb ntawm cov nplaim silicon los ntawm lub teeb ci ntsa iab Tsis muaj dab tsi Qhov ntev tag nrho ≤1 × txoj kab uas hla wafer
Ntug Chips Siab Los Ntawm Lub Teeb Ci Tsis pub ≥0.2 hli dav thiab tob 5 tso cai, ≤1 hli txhua
Kev Ua Rau Silicon Nto Paug Los Ntawm Kev Siv Siab Tsis muaj dab tsi
Ntim Khoom Multi-wafer Cassette los yog Single Wafer Thawv

Cov Lus Cim:

※ Cov kev txwv tsis pub muaj qhov tsis zoo siv rau tag nrho cov nplaim wafer tshwj tsis yog thaj chaw tsis suav nrog ntug. # Cov khawb yuav tsum tau kuaj xyuas ntawm Si ntsej muag xwb.

Lub P-hom 4H/6H-P 3C-N hom 4-nti SiC substrate nrog 〈111〉± 0.5° orientation thiab Zero MPD qib yog siv dav hauv kev siv hluav taws xob ua haujlwm siab. Nws cov thermal conductivity zoo heev thiab lub zog tawg siab ua rau nws zoo tagnrho rau cov khoom siv hluav taws xob, xws li cov hloov hluav taws xob siab, inverters, thiab cov hloov hluav taws xob, ua haujlwm hauv cov xwm txheej hnyav. Tsis tas li ntawd, lub substrate txoj kev tiv thaiv rau qhov kub siab thiab corrosion ua kom muaj kev ua haujlwm ruaj khov hauv cov chaw ib puag ncig hnyav. Qhov tseeb 〈111〉± 0.5° orientation txhim kho qhov tseeb ntawm kev tsim khoom, ua rau nws haum rau cov khoom siv RF thiab cov ntawv thov zaus siab, xws li radar systems thiab cov khoom siv sib txuas lus wireless.

Cov txiaj ntsig ntawm N-hom SiC composite substrates suav nrog:

1. Kev Ua Haujlwm Thermal Siab: Kev ua kom sov zoo, ua rau nws tsim nyog rau qhov chaw kub thiab cov ntawv thov fais fab siab.
2. Lub Hwj Chim Siab Thaum Muaj Hluav Taws Xob Tawg: Xyuas kom muaj kev ua haujlwm zoo hauv cov ntawv thov hluav taws xob siab xws li cov hloov hluav taws xob thiab cov inverters.
3. Qib xoom MPD (Micro Pipe Defect): Lav tias yuav tsis muaj qhov tsis zoo ntau, muab kev ruaj khov thiab kev ntseeg siab rau cov khoom siv hluav taws xob tseem ceeb.
4. Kev Tiv Thaiv Kev Xeb: Siv tau ntev hauv cov chaw ib puag ncig hnyav, ua kom muaj kev ua haujlwm ntev hauv cov xwm txheej nyuaj.
5. Kev Taw Qhia Tseeb 〈111〉± 0.5°: Tso cai rau kev sib dhos kom raug thaum lub sijhawm tsim khoom, txhim kho kev ua haujlwm ntawm cov cuab yeej hauv kev siv zaus siab thiab RF.

 

Zuag qhia tag nrho, P-hom 4H/6H-P 3C-N hom 4-nti SiC substrate nrog 〈111〉± 0.5° orientation thiab Zero MPD qib yog cov khoom siv ua tau zoo zoo tagnrho rau cov ntawv thov hluav taws xob siab heev. Nws cov thermal conductivity zoo heev thiab lub zog tawg siab ua rau nws zoo meej rau cov khoom siv hluav taws xob xws li cov hloov hluav taws xob siab, inverters, thiab converters. Zero MPD qib ua kom muaj qhov tsis zoo tsawg kawg nkaus, muab kev ntseeg siab thiab kev ruaj khov hauv cov khoom siv tseem ceeb. Tsis tas li ntawd, lub substrate txoj kev tiv thaiv corrosion thiab kub siab ua kom muaj zog hauv cov chaw ib puag ncig hnyav. Qhov tseeb 〈111〉± 0.5° orientation tso cai rau kev sib phim raug thaum lub sijhawm tsim khoom, ua rau nws tsim nyog heev rau cov khoom siv RF thiab cov ntawv thov zaus siab.

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