P-hom SiC substrate SiC wafer Dia2inch khoom tshiab

Cov khoom siv P-hom silicon carbide feem ntau siv los ua cov khoom siv fais fab, xws li Insulate-Gate Bipolar transistors (IGBTs).

IGBT = MOSFET + BJT, uas yog lub qhov qhib-kaw. MOSFET = IGFET (hlau oxide semiconductor field effect tube, lossis insulated gate type field effect transistor). BJT (Bipolar Junction Transistor, tseem hu ua transistor), bipolar txhais tau tias muaj ob hom electron thiab qhov chaw nqa khoom koom nrog hauv cov txheej txheem conduction ntawm kev ua haujlwm, feem ntau muaj PN junction koom nrog hauv conduction.

Lub 2-nti p-hom silicon carbide (SiC) wafer yog nyob rau hauv 4H lossis 6H polytype. Nws muaj cov khoom zoo sib xws rau n-hom silicon carbide (SiC) wafers, xws li kev tiv taus kub siab, kev ua haujlwm thermal siab, thiab kev ua haujlwm hluav taws xob siab. p-hom SiC substrates feem ntau siv rau hauv kev tsim cov khoom siv fais fab, tshwj xeeb tshaj yog rau kev tsim cov insulated-gate bipolar transistors (IGBTs). kev tsim cov IGBTs feem ntau cuam tshuam nrog PN junctions, qhov twg p-hom SiC yog qhov zoo rau kev tswj tus cwj pwm ntawm lub cuab yeej.