SiC ceramic phaj/tais rau 4 nti 6 nti wafer tuav rau ICP

Kev Piav Qhia Luv:

Lub phaj SiC ceramic yog ib qho khoom ua tau zoo uas tsim los ntawm cov khoom siv Silicon Carbide uas muaj kev ntshiab siab, tsim los siv rau hauv qhov chaw kub heev, tshuaj lom neeg, thiab tshuab. Lub phaj SiC no nto moo rau nws qhov nyuaj tshwj xeeb, kev ua kom sov, thiab kev tiv thaiv xeb, thiab nws yog siv dav ua lub wafer carrier, susceptor, lossis cov khoom siv hauv kev lag luam semiconductor, LED, photovoltaic, thiab aerospace.

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Cov yam ntxwv

SiC ceramic phaj Abstract

Nrog rau qhov ruaj khov thermal zoo heev txog li 1600 ° C thiab tiv taus cov pa roj reactive thiab cov chaw plasma zoo heev, lub phaj SiC ua kom muaj kev ua haujlwm zoo thaum lub sijhawm kub siab etching, deposition, thiab diffusion. Nws cov qauv ntom ntom, tsis muaj qhov porous txo qis kev tsim cov khoom me me, ua rau nws zoo tagnrho rau kev siv ultra-huv hauv qhov chaw nqus tsev lossis chav huv.

Daim Ntawv Thov SiC ceramic phaj

1. Kev Tsim Khoom Siv Semiconductor

Cov phaj ceramic SiC feem ntau siv ua cov wafer carriers, susceptors, thiab pedestal plates hauv cov khoom siv semiconductor xws li CVD (Chemical Vapor Deposition), PVD (Physical Vapor Deposition), thiab etching systems. Lawv cov thermal conductivity zoo heev thiab thermal expansion qis tso cai rau lawv kom tswj tau qhov kub thiab txias sib npaug, uas yog qhov tseem ceeb rau kev ua wafer precision siab. SiC txoj kev tiv thaiv rau cov pa roj corrosive thiab plasmas ua kom muaj kev ruaj khov hauv cov chaw ib puag ncig hnyav, pab txo cov khoom me me thiab kev saib xyuas cov khoom siv.

2. Kev Lag Luam LED - ICP Etching

Hauv kev tsim khoom LED, cov phaj SiC yog cov khoom tseem ceeb hauv ICP (Inductively Coupled Plasma) etching systems. Ua raws li cov tuav wafer, lawv muab lub platform ruaj khov thiab thermally robust los txhawb sapphire lossis GaN wafers thaum lub sijhawm ua plasma. Lawv qhov kev tiv thaiv plasma zoo heev, qhov chaw tiaj tus, thiab qhov ruaj khov ntawm qhov ntev pab ua kom muaj kev raug siab thiab kev sib npaug ntawm etching, ua rau muaj kev nce ntxiv ntawm cov txiaj ntsig thiab kev ua haujlwm ntawm cov cuab yeej hauv LED chips.

3. Photovoltaics (PV) thiab Lub Zog Hnub Ci

Cov phaj ceramic SiC kuj tseem siv rau hauv kev tsim cov roj teeb hnub ci, tshwj xeeb tshaj yog thaum lub sijhawm kub siab sintering thiab annealing. Lawv qhov tsis muaj zog ntawm qhov kub siab thiab muaj peev xwm tiv taus kev warping ua kom muaj kev ua tiav ntawm silicon wafers. Tsis tas li ntawd, lawv qhov kev pheej hmoo qis ntawm kev ua qias tuaj yog qhov tseem ceeb rau kev tswj hwm kev ua haujlwm ntawm cov roj teeb photovoltaic.

SiC ceramic phaj Cov Khoom

1. Lub zog thiab kev nyuaj siab ntawm txhua yam khoom siv

Cov phaj SiC ceramic muaj zog heev, nrog rau lub zog flexural feem ntau tshaj 400 MPa thiab Vickers hardness ncav cuag >2000 HV. Qhov no ua rau lawv tiv taus kev hnav, kev puas tsuaj, thiab kev hloov pauv, ua kom muaj lub neej ntev txawm tias nyob hauv qhov hnyav lossis rov ua dua thermal cycling.

2. Kev Ua Haujlwm Thermal Siab

SiC muaj cov thermal conductivity zoo heev (feem ntau yog 120–200 W/m·K), uas ua rau nws faib cov cua sov thoob plaws nws qhov chaw. Cov yam ntxwv no tseem ceeb heev rau cov txheej txheem xws li wafer etching, deposition, lossis sintering, qhov twg qhov kub thiab txias sib xws cuam tshuam ncaj qha rau cov khoom tsim tawm thiab zoo.

3. Kev Ruaj Ntseg Thermal Zoo Tshaj Plaws

Nrog rau qhov chaw yaj siab (2700 ° C) thiab qhov coefficient qis ntawm thermal expansion (4.0 × 10⁻⁶ / K), SiC ceramic plates tswj tau qhov tseeb ntawm qhov ntev thiab kev ua kom zoo nkauj hauv qab lub voj voog cua sov thiab txias sai. Qhov no ua rau lawv zoo tagnrho rau kev siv hauv cov cub tawg kub, cov chav nqus tsev, thiab cov chaw plasma.

Cov Khoom Siv Txuj Ci
Cov Ntawv Qhia	Chav tsev	Tus nqi
Lub Npe Khoom Siv		Cov tshuaj tiv thaiv Sintered Silicon Carbide	Silicon Carbide Sintered uas tsis muaj siab	Cov Silicon Carbide uas tau rov ua dua tshiab
Kev sau ua ke		RBSiC	SSiC	R-SiC
Qhov Ceev Ntau	g/cm3	3	3.15 ± 0.03	2.60-2.70
Lub zog flexural	MPa (kpsi)	338(49)	380(55)	80-90 (20°C) 90-100 (1400°C)
Lub zog compressive	MPa (kpsi)	1120(158)	3970 (560)	> 600
Qhov nyuaj	Knoop	2700	2800	/
Rhuav Tshem Kev Ua Siab Ntev	MPa m1/2	4.5	4	/
Kev Ua Kub	W/mk	95	120	23
Coefficient ntawm Thermal Expansion	10^-6.1/°C	5	4	4.7
Kub Tshwj Xeeb	Joule/g 0k	0.8	0.67	/
Qhov kub siab tshaj plaws hauv huab cua	℃	1200	1500 xyoo	1600 xyoo
Modulus Elastic	Gpa	360	410	240

Cov Lus Nug thiab Lus Teb Txog SiC ceramic plate

Q: Cov yam ntxwv ntawm silicon carbide phaj yog dab tsi?

Ib: Cov phaj silicon carbide (SiC) paub txog lawv lub zog siab, tawv, thiab ruaj khov thermal. Lawv muab cov thermal conductivity zoo heev thiab thermal expansion qis, ua kom ntseeg tau tias muaj kev ua haujlwm zoo nyob rau hauv qhov kub thiab txias heev. SiC kuj tseem tsis muaj zog tshuaj lom neeg, tiv taus cov kua qaub, alkalis, thiab plasma ib puag ncig, ua rau nws zoo tagnrho rau kev ua semiconductor thiab LED. Nws qhov ntom ntom, du nto txo qhov tsim cov khoom me me, tswj kev sib raug zoo hauv chav huv. Cov phaj SiC yog siv dav ua cov wafer carriers, susceptors, thiab txhawb cov khoom hauv qhov kub thiab txias thiab corrosive ib puag ncig thoob plaws semiconductor, photovoltaic, thiab aerospace kev lag luam.