SiC Ingot Loj Hlob Rau SiC Crystal TSSG/LPE Txoj Kev Loj

Kev Piav Qhia Luv:

XKH lub tshuab ua kom cov silicon carbide ingot loj hlob siv cov thev naus laus zis TSSG (Top-Seeded Solution Growth) thiab LPE (Liquid Phase Epitaxy) uas yog lub ntiaj teb ua thawj coj, tsim tshwj xeeb rau kev loj hlob ntawm SiC ib leeg siv lead ua ke zoo. Txoj kev TSSG ua rau cov 4H/6H-SiC ingots loj hlob 4-8 nti los ntawm kev tswj qhov kub thiab txias kom raug thiab kev tswj qhov ceev ntawm kev nqa noob, thaum txoj kev LPE ua rau kev tswj hwm kev loj hlob ntawm cov txheej SiC epitaxial ntawm qhov kub qis dua, tshwj xeeb tshaj yog haum rau cov txheej epitaxial tuab uas tsis muaj qhov tsis zoo. Lub tshuab ua kom cov silicon carbide ingot loj hlob no tau siv tau zoo hauv kev tsim khoom lag luam ntawm ntau yam siv lead ua ke SiC suav nrog hom 4H/6H-N thiab hom 4H/6H-SEMI insulating, muab cov kev daws teeb meem tiav los ntawm cov khoom siv mus rau cov txheej txheem.


Cov yam ntxwv

Txoj Cai Ua Haujlwm

Lub hauv paus ntsiab lus ntawm kev loj hlob ntawm cov kua silicon carbide ingot suav nrog kev yaj cov khoom siv SiC uas muaj cov khoom siv siab hauv cov hlau molten (piv txwv li, Si, Cr) ntawm 1800-2100 ° C los tsim cov tshuaj saturated, ua raws li kev tswj hwm kev loj hlob ntawm SiC ib leeg siv lead ua rau ntawm cov noob siv lead ua los ntawm kev ntsuas kub thiab kev tswj hwm supersaturation. Cov thev naus laus zis no yog qhov tsim nyog rau kev tsim cov khoom siv siab-purity (> 99.9995%) 4H / 6H-SiC ib leeg siv lead ua nrog qhov tsis zoo tsawg (<100 / cm²), ua tau raws li cov kev cai nruj rau cov khoom siv hluav taws xob thiab RF. Lub kaw lus loj hlob ntawm cov kua ua rau muaj kev tswj hwm qhov tseeb ntawm cov khoom siv lead ua (N / P hom) thiab resistivity los ntawm kev ua kom zoo tshaj plaws ntawm cov tshuaj sib xyaw thiab cov kev loj hlob.

Cov Cheebtsam Tseem Ceeb

1. Lub Tshuab Crucible Tshwj Xeeb: High-purity graphite/tantalum composite crucible, tiv taus kub > 2200 ° C, tiv taus SiC yaj corrosion.

2. Lub Tshuab Ua Kub Ntau Thaj Chaw: Ua ke ua kom sov / induction nrog kev tswj qhov kub thiab txias ntawm ± 0.5 ° C (1800-2100 ° C ntau yam).

3. Lub Tshuab Tswj Xyuas Kom Tseeb: Ob lub voj voog kaw rau kev tig noob (0-50rpm) thiab tsa (0.1-10mm / h).

4. Lub Tshuab Tswj Huab Cua: Kev tiv thaiv argon/nitrogen uas muaj purity siab, siab ua haujlwm tau kho (0.1-1atm).

5. Kev Tswj Xyuas Kev Txawj Ntse: PLC + kev lag luam PC redundant tswj nrog lub sijhawm tiag tiag kev loj hlob interface saib xyuas.

6. Lub Tshuab Txias Zoo: Kev tsim dej txias zoo ua kom muaj kev ua haujlwm ruaj khov mus sij hawm ntev.

Kev Sib Piv ntawm TSSG thiab LPE

Cov yam ntxwv Txoj Kev TSSG Txoj Kev LPE
Kub Kev Loj Hlob 2000-2100°C 1500-1800°C
Kev Loj Hlob Tus Nqi 0.2-1 hli/teev 5-50μm/teev
Qhov Loj ntawm Crystal Cov hlau 4-8 nti 50-500μm epi-txheej
Daim Ntawv Thov Tseem Ceeb Kev npaj cov khoom siv Cov txheej txheem hluav taws xob ntawm cov khoom siv hluav taws xob
Qhov Ceev Ntawm Qhov Tsis Zoo <500/cm² <100/cm²
Cov Polytypes Tsim Nyog 4H/6H-SiC 4H/3C-SiC

Cov Ntawv Thov Tseem Ceeb

1. Cov Khoom Siv Hluav Taws Xob: 6-nti 4H-SiC substrates rau 1200V+ MOSFETs/diodes.

2. 5G RF Cov Khoom Siv: Cov khoom siv SiC semi-insulating rau cov chaw nres tsheb PAs.

3. Daim Ntawv Thov EV: Cov txheej txheem tuab heev (> 200μm) epi rau cov khoom siv tsheb.

4. Cov Inverters PV: Cov khoom siv uas tsis muaj qhov tsis zoo uas ua rau muaj kev hloov pauv tau zoo dua 99%.

Cov txiaj ntsig tseem ceeb

1. Kev Ua Tau Zoo Dua Hauv Kev Siv Tshuab
1.1 Kev Tsim Qauv Ntau Txoj Kev Sib Koom Ua Ke
Lub tshuab loj hlob SiC ingot uas ua kua no tau tsim kho tshiab los ntawm kev siv cov thev naus laus zis loj hlob ntawm TSSG thiab LPE. Lub tshuab TSSG siv cov tshuaj loj hlob saum toj kawg nkaus nrog kev tswj hwm qhov kub thiab txias kom meej (ΔT≤5℃/cm), ua rau cov SiC ingots loj 4-8 nti loj hlob ruaj khov nrog cov txiaj ntsig ib zaug ntawm 15-20kg rau 6H/4H-SiC siv lead ua. Lub tshuab LPE siv cov khoom siv ua kom zoo tshaj plaws (Si-Cr alloy system) thiab kev tswj hwm supersaturation (±1%) los loj hlob cov txheej epitaxial tuab zoo nrog qhov tsis xws luag <100/cm² ntawm qhov kub qis (1500-1800℃).

1.2 Lub Tshuab Tswj Xyuas Kev Txawj Ntse
Nruab nrog 4th-tiam ntse kev loj hlob tswj uas muaj:
• Kev soj ntsuam ntau yam hauv qhov chaw (400-2500nm wavelength range)
• Kev ntsuas qib yaj raws li laser (± 0.01 hli precision)
• Kev tswj hwm lub voj voog kaw raws li CCD (<±1mm fluctuation)
• Kev txhim kho qhov kev loj hlob ntawm AI (txuag hluav taws xob tau 15%)

2. Cov txiaj ntsig ntawm kev ua haujlwm ntawm cov txheej txheem
2.1 Lub Zog Tseem Ceeb ntawm Txoj Kev TSSG
• Muaj peev xwm loj: Txhawb nqa txog li 8-nti kev loj hlob ntawm cov siv lead ua nrog >99.5% txoj kab uas hla sib npaug
• Kev siv lead ua zoo dua: Kev sib cais ceev <500/cm², micropipe ceev <5/cm²
• Kev sib npaug ntawm doping: <8% n-hom resistivity variation (4-nti wafers)
• Kev loj hlob zoo tshaj plaws: Kho tau 0.3-1.2 hli/teev, 3-5 × sai dua li cov txheej txheem vapor-phase

2.2 Lub Zog Tseem Ceeb ntawm Txoj Kev LPE
• Ultra-low defect epitaxy: Interface state density <1×10¹¹cm⁻²·eV⁻¹
• Kev tswj qhov tuab kom meej: 50-500μm epi-layers nrog <±2% qhov sib txawv ntawm qhov tuab
• Kev ua haujlwm kub qis: 300-500 ℃ qis dua CVD cov txheej txheem
• Kev loj hlob ntawm cov qauv nyuaj: Txhawb nqa pn junctions, superlattices, thiab lwm yam.

3. Cov txiaj ntsig zoo ntawm kev tsim khoom
3.1 Kev Tswj Tus Nqi
• Siv cov khoom siv raw li 85% (piv rau 60% ib txwm muaj)
• Siv zog tsawg dua 40% (piv rau HVPE)
• 90% ntawm cov khoom siv ua haujlwm tau zoo (kev tsim qauv modular txo qhov tsis ua haujlwm)

3.2 Kev Ntsuam Xyuas Zoo
• Kev tswj cov txheej txheem 6σ (CPK> 1.67)
• Kev tshawb pom qhov tsis zoo hauv online (kev daws teeb meem 0.1μm)
• Kev taug qab cov ntaub ntawv tiav tag nrho (2000+ cov kev teeb tsa tiag tiag)

3.3 Kev nthuav dav
• Sib xws nrog 4H/6H/3C polytypes
• Hloov kho tau mus rau 12-nti cov txheej txheem modules
• Txhawb SiC/GaN hetero-kev sib koom ua ke

4. Cov txiaj ntsig ntawm daim ntawv thov kev lag luam
4.1 Cov Khoom Siv Fais Fab
• Cov khoom siv uas tsis tshua muaj zog (0.015-0.025Ω·cm) rau cov khoom siv 1200-3300V
• Cov khoom siv semi-insulating (>10⁸Ω·cm) rau kev siv RF

4.2 Cov Txuj Ci Tshiab
• Kev sib txuas lus Quantum: Cov khoom siv suab nrov qis heev (1/f suab nrov <-120dB)
• Ib puag ncig hnyav heev: Cov siv lead ua uas tiv taus hluav taws xob (<5% degradation tom qab 1 × 10¹⁶n/cm² irradiation)

XKH Cov Kev Pabcuam

1. Cov Khoom Siv Kho Kom Haum: Kev teeb tsa TSSG/LPE system uas kho kom haum.
2. Kev Kawm Txuj Ci: Cov kev kawm txuj ci dav dav.
3. Kev Txhawb Nqa Tom Qab Muag: 24/7 kev teb thiab kev saib xyuas.
4. Kev daws teeb meem turnkey: Kev pabcuam puv ntoob txij li kev teeb tsa mus txog rau kev lees paub cov txheej txheem.
5. Khoom Siv Khoom: 2-12 nti SiC substrates / epi-wafers muaj.

Cov txiaj ntsig tseem ceeb suav nrog:
• Muaj peev xwm loj hlob tau txog li 8-nti siv lead ua.
• Kev sib npaug ntawm qhov tsis kam <0.5%.
• Lub sijhawm ua haujlwm ntawm cov khoom siv >95%.
• Kev pab txhawb nqa 24/7.

SiC ingot loj hlob cub tawg 2
SiC ingot loj hlob cub tawg 3
SiC ingot loj hlob cub tawg 5

  • Yav dhau los:
  • Tom ntej no:

  • Sau koj cov lus ntawm no thiab xa tuaj rau peb