SiC substrate P-hom 4H/6H-P 3C-N 4 nti nrog tuab ntawm 350um Qib ntau lawm Qib dummy

Kev Piav Qhia Luv:

Lub P-hom 4H/6H-P 3C-N 4-nti SiC substrate, nrog rau qhov tuab ntawm 350 μm, yog cov khoom siv semiconductor ua tau zoo siv dav hauv kev tsim khoom siv hluav taws xob. Paub txog nws qhov kev ua tau zoo thermal conductivity, high breakdown voltage, thiab tiv taus qhov kub thiab txias heev thiab qhov chaw corrosive, lub substrate no zoo tagnrho rau kev siv hluav taws xob fais fab. Lub substrate qib tsim khoom siv rau hauv kev tsim khoom loj, ua kom muaj kev tswj hwm zoo thiab kev ntseeg siab siab hauv cov khoom siv hluav taws xob siab heev. Lub caij no, lub substrate dummy-qib feem ntau yog siv rau kev debugging txheej txheem, kev ntsuas khoom siv, thiab prototyping. Cov khoom zoo tshaj plaws ntawm SiC ua rau nws yog qhov kev xaiv zoo rau cov khoom siv ua haujlwm hauv qhov kub thiab txias, high-voltage, thiab high-frequency ib puag ncig, suav nrog cov khoom siv hluav taws xob thiab RF systems.


Cov yam ntxwv

4 nti SiC substrate P-hom 4H/6H-P 3C-N parameter rooj

4 Silicon txoj kab uas hla ntiCarbide (SiC) Cov Khoom Siv Cov Lus Qhia Tshwj Xeeb

Qib Tsis Muaj MPD Ntau Lawm

Qib (Z Qib)

Kev Tsim Khoom Txheem

Qib (P Qib)

 

Qib Dummy (D Qib)

Txoj kab uas hla 99.5 hli ~ 100.0 hli
Qhov tuab 350 μm ± 25 μm
Kev Taw Qhia Wafer Tawm ntawm txoj kab: 2.0 ° -4.0 ° mus rau [11]2(-)0] ± 0.5° rau 4H/6H-P, On axis:〈111〉± 0.5° rau 3C-N
Qhov Ceev ntawm Micropipe 0 cm-2
Kev tiv taus p-hom 4H/6H-P ≤0.1 Ωꞏcm ≤0.3 Ωꞏcm
n-hom 3C-N ≤0.8 mΩꞏcm ≤1 m Ωꞏcm
Kev Taw Qhia Tiaj Tus Thawj Coj 4H/6H-P -

{1010} ± 5.0°

3C-N -

{110} ± 5.0°

Qhov Ntev Tiaj Tus Thawj 32.5 hli ± 2.0 hli
Qhov Ntev Thib Ob 18.0 hli ± 2.0 hli
Kev Taw Qhia Qib Thib Ob Lub ntsej muag silicon tig rau saum: 90° CW. ntawm Prime tiaj tiaj±5.0°
Kev Tshem Tawm Ntug 3 hli 6 hli
LTV/TTV/Hneev nti /Warp ≤2.5 μm/≤5 μm/≤15 μm/≤30 μm ≤10 μm/≤15 μm/≤25 μm/≤40 μm
Kev ntxhib Polish Ra≤1 nm
CMP Ra≤0.2 nm Ra≤0.5 nm
Cov Ntxaij Ntug Los Ntawm Lub Teeb Ci Siab Tsis muaj dab tsi Qhov ntev tag nrho ≤ 10 hli, ib qho ntev ≤ 2 hli
Hex Phaj Los Ntawm Lub Teeb Ci Siab Thaj chaw sib sau ua ke ≤0.05% Thaj chaw sib sau ua ke ≤0.1%
Cov Cheeb Tsam Polytype Los Ntawm Lub Teeb Ci Siab Tsis muaj dab tsi Thaj chaw sib sau ua ke ≤ 3%
Cov pa roj carbon uas pom tau Thaj chaw sib sau ua ke ≤0.05% Thaj chaw sib sau ua ke ≤3%
Cov khawb ntawm cov nplaim silicon los ntawm lub teeb ci ntsa iab Tsis muaj dab tsi Qhov ntev tag nrho ≤1 × txoj kab uas hla wafer
Ntug Chips Siab Los Ntawm Lub Teeb Ci Tsis pub ≥0.2 hli dav thiab tob 5 tso cai, ≤1 hli txhua
Kev Ua Rau Silicon Nto Paug Los Ntawm Kev Siv Siab Tsis muaj dab tsi
Ntim Khoom Multi-wafer Cassette los yog Single Wafer Thawv

Cov Lus Cim:

※ Cov kev txwv tsis pub muaj qhov tsis zoo siv rau tag nrho cov nplaim wafer tshwj tsis yog thaj chaw tsis suav nrog ntug. # Cov khawb yuav tsum tau kuaj xyuas ntawm Si ntsej muag xwb.

Lub P-hom 4H/6H-P 3C-N 4-nti SiC substrate nrog lub thickness ntawm 350 μm yog dav siv rau hauv kev tsim khoom siv hluav taws xob thiab fais fab. Nrog rau kev ua tau zoo heev ntawm thermal conductivity, high breakdown voltage, thiab muaj zog tiv taus rau qhov chaw ib puag ncig hnyav, lub substrate no yog qhov zoo tagnrho rau cov khoom siv hluav taws xob ua haujlwm siab xws li cov hloov hluav taws xob siab, inverters, thiab RF khoom siv. Cov substrates qib tsim khoom siv rau hauv kev tsim khoom loj, ua kom ntseeg tau tias muaj kev ua haujlwm ntawm cov khoom siv txhim khu kev qha, siab precision, uas yog qhov tseem ceeb rau cov khoom siv hluav taws xob thiab cov ntawv thov zaus siab. Ntawm qhov tod tes, cov substrates qib dummy feem ntau yog siv rau kev ntsuas cov txheej txheem, kev sim cov khoom siv, thiab kev tsim qauv prototype, pab tswj kev tswj hwm zoo thiab kev sib xws ntawm cov txheej txheem hauv kev tsim khoom semiconductor.

Cov txiaj ntsig ntawm N-hom SiC composite substrates suav nrog

  • Kev Ua Haujlwm Thermal Siab: Kev ua kom sov zoo ua rau lub substrate zoo tagnrho rau kev siv kub thiab muaj zog.
  • Lub zog tawg siab: Txhawb kev ua haujlwm siab-voltage, ua kom ntseeg tau tias muaj kev ntseeg siab hauv cov khoom siv hluav taws xob thiab RF.
  • Kev Tiv Thaiv Rau Qhov Chaw Nyuaj Siab: Siv tau ntev hauv cov xwm txheej hnyav xws li kub thiab kub heev, ua kom muaj kev ua haujlwm ntev.
  • Kev Ntsuas Qib Tsim Khoom: Xyuas kom muaj kev ua tau zoo thiab txhim khu kev qha hauv kev tsim khoom loj, tsim nyog rau kev siv hluav taws xob siab heev thiab RF daim ntawv thov.
  • Qib Dummy rau Kev Ntsuas: Ua kom muaj kev ntsuas cov txheej txheem raug, kev sim khoom siv, thiab kev tsim qauv yam tsis muaj kev cuam tshuam rau cov wafers qib tsim khoom.

 Zuag qhia tag nrho, P-hom 4H/6H-P 3C-N 4-nti SiC substrate nrog lub thickness ntawm 350 μm muaj cov txiaj ntsig zoo rau kev siv hluav taws xob ua tau zoo. Nws cov thermal conductivity siab thiab lub zog tawg ua rau nws zoo tagnrho rau cov chaw muaj zog thiab kub siab, thaum nws txoj kev tiv thaiv rau cov xwm txheej hnyav ua kom muaj kev ruaj khov thiab kev ntseeg siab. Lub substrate qib tsim khoom ua kom muaj kev ua tau zoo thiab sib xws hauv kev tsim khoom loj ntawm cov khoom siv hluav taws xob thiab RF. Lub caij no, lub substrate dummy-qib yog qhov tseem ceeb rau kev ntsuas cov txheej txheem, kev sim khoom siv, thiab prototyping, txhawb kev tswj hwm zoo thiab kev sib xws hauv kev tsim khoom semiconductor. Cov yam ntxwv no ua rau SiC substrates muaj ntau yam rau cov ntawv thov siab heev.

Daim duab qhia ntxaws ntxaws

b3
b4

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  • Tom ntej no:

  • Sau koj cov lus ntawm no thiab xa tuaj rau peb