Silicon carbide tsis kam ntev siv lead ua kom sov loj hlob 6/8/12 nti nti SiC ingot siv lead ua PVT txoj kev

Silicon carbide tsis kam ntev siv lead ua cua sov loj hlob 6/8/12 nti nti SiC ingot siv lead ua PVT txoj kev Featured Duab

Kev Piav Qhia Luv:

Silicon carbide tsis kam rau kev loj hlob cub tawg (PVT txoj kev, lub cev vapor hloov txoj kev) yog cov khoom siv tseem ceeb rau kev loj hlob ntawm silicon carbide (SiC) ib leeg siv lead ua los ntawm kev kub siab sublimation-recrystallization txoj cai. Cov thev naus laus zis siv cua sov tiv taus (graphite cua sov lub cev) los sublimate cov khoom siv SiC raw ntawm qhov kub siab ntawm 2000 ~ 2500 ℃, thiab recrystallize hauv thaj chaw kub qis (noob siv lead ua) los tsim cov khoom siv SiC ib leeg zoo (4H / 6H-SiC). Txoj kev PVT yog cov txheej txheem tseem ceeb rau kev tsim cov khoom siv SiC ntawm 6 nti thiab qis dua, uas yog siv dav hauv kev npaj cov khoom siv hluav taws xob semiconductors (xws li MOSFETs, SBD) thiab cov khoom siv zaus xov tooj cua (GaN-on-SiC).

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Cov yam ntxwv

Txoj cai ua haujlwm:

1. Cov khoom siv raw: cov hmoov SiC purity siab (lossis thaiv) muab tso rau hauv qab ntawm graphite crucible (cheeb tsam kub siab).

2. Lub tshuab nqus tsev/ib puag ncig uas tsis txav chaw: nqus tsev rau hauv lub tshuab cua sov (<10⁻³ mbar) lossis dhau cov roj inert (Ar).

3. Kev kub siab sublimation: tiv taus cua sov rau 2000 ~ 2500 ℃, SiC decomposition rau hauv Si, Si₂C, SiC₂ thiab lwm yam khoom siv roj.

4. Kev sib kis ntawm cov pa roj: qhov kub thiab txias hloov pauv ua rau cov khoom siv roj sib kis mus rau thaj chaw kub qis (qhov kawg ntawm noob).

5. Kev loj hlob ntawm cov siv lead ua: Cov roj theem rov ua dua tshiab rau ntawm qhov chaw ntawm Cov Siv lead ua noob thiab loj hlob mus rau hauv ib qho kev taw qhia raws C-axis lossis A-axis.

Cov Ntsiab Lus Tseem Ceeb:

1. Qhov kub thiab txias hloov pauv: 20 ~ 50 ℃ / cm (tswj kev loj hlob thiab qhov ceev ntawm qhov tsis zoo).

2. Siab: 1 ~ 100mbar (siab qis kom txo qhov tsis huv).

3. Kev loj hlob ntawm tus nqi: 0.1 ~ 1 hli / teev (cuam tshuam rau qhov zoo ntawm siv lead ua thiab kev ua haujlwm zoo).

Cov yam ntxwv tseem ceeb:

(1) Qhov zoo ntawm cov siv lead ua
Qhov ceev tsis zoo: qhov ceev ntawm cov microtubule <1 cm⁻², qhov ceev ntawm qhov dislocation 10³~10⁴ cm⁻² (los ntawm kev ua kom zoo dua ntawm noob thiab kev tswj cov txheej txheem).

Kev tswj hom polycrystalline: tuaj yeem loj hlob 4H-SiC (mainstream), 6H-SiC, 4H-SiC feem pua ntau dua 90% (yuav tsum tswj qhov kub thiab txias thiab qhov sib piv ntawm cov roj theem stoichiometric kom raug).

(2) Kev ua tau zoo ntawm cov khoom siv
Kev ruaj khov kub siab: graphite cua sov lub cev kub> 2500 ℃, lub cev cub hluav taws xob siv ntau txheej rwb thaiv tsev tsim (xws li graphite xav + dej txias lub tsho).

Kev tswj kom sib xws: Qhov kub thiab txias ntawm axial/radial ntawm ±5 ° C ua kom muaj qhov sib xws ntawm lub cheeb ntawm cov siv lead ua (qhov sib txawv ntawm 6-nti substrate thickness <5%).

Qib ntawm kev siv tshuab: Kev sib xyaw ua ke PLC tswj system, kev saib xyuas lub sijhawm tiag tiag ntawm qhov kub thiab txias, siab thiab kev loj hlob.

(3) Cov txiaj ntsig ntawm kev siv tshuab
Kev siv cov khoom siv siab: tus nqi hloov pauv khoom siv raw> 70% (zoo dua li CVD txoj kev).

Kev sib xws loj: 6-nti ntau lawm tau ua tiav, 8-nti yog nyob rau theem kev txhim kho.

(4) Kev siv hluav taws xob thiab tus nqi
Lub zog siv ntawm ib lub cub tawg yog 300 ~ 800kW · h, suav txog 40% ~ 60% ntawm tus nqi tsim khoom ntawm SiC substrate.

Kev nqis peev rau cov khoom siv yog siab (1.5M 3M ib chav tsev), tab sis tus nqi ntawm cov khoom siv hauv qab qis dua li CVD txoj kev.

Cov ntawv thov tseem ceeb:

1. Cov khoom siv hluav taws xob: SiC MOSFET substrate rau lub tsheb fais fab inverter thiab photovoltaic inverter.

2. Cov khoom siv Rf: 5G chaw nres tsheb hauv paus GaN-on-SiC epitaxial substrate (feem ntau 4H-SiC).

3. Cov khoom siv ib puag ncig hnyav heev: cov ntsuas kub thiab siab rau cov khoom siv aerospace thiab nuclear energy.

Cov kev tsis:

Cov Lus Qhia Tshwj Xeeb	Cov ntsiab lus
Qhov Loj (L × W × H)	2500 × 2400 × 3456 hli los yog kho kom haum
Qhov Caj Npab Loj	900 hli
Qhov Kawg Nqus Tsev Siab	6 × 10⁻⁴ Pa (tom qab 1.5 teev ntawm lub tshuab nqus tsev)
Tus Nqi Xaim	≤5 Pa/12 teev (ci tawm)
Txoj kab uas hla ntawm lub ncej tig	50 hli
Kev Tig Ceev	0.5–5 rpm
Txoj Kev Ua Kub	Hluav taws xob tiv taus cua sov
Qhov Kub Siab Tshaj Plaws ntawm Lub Cub	2500°C
Lub zog cua sov	40 kW × 2 × 20 kW
Kev Ntsuas Kub	Dual-xim infrared pyrometer
Kub thiab txias	900–3000°C
Kev Ntsuas Kub	±1°C
Qhov Siab Ntau Yam	1–700 mbar
Kev Tswj Xyuas Siab	1–10 mbar: ±0.5% FS; 10–100 mbar: ±0.5% FS; 100–700 mbar: ±0.5% FS
Hom Kev Ua Haujlwm	Kev thauj khoom hauv qab, kev xaiv kev nyab xeeb ntawm tes / tsis siv neeg
Cov Nta Xaiv Tau	Kev ntsuas kub ob npaug, ntau thaj chaw cua sov

Cov Kev Pabcuam XKH:

XKH muab kev pabcuam tag nrho cov txheej txheem ntawm SiC PVT cub tawg, suav nrog kev kho cov khoom siv (tsim qauv thermal field, tswj tsis siv neeg), kev txhim kho txheej txheem (tswj cov duab siv lead ua, kho qhov tsis zoo), kev cob qhia kev txawj ntse (kev ua haujlwm thiab kev txij nkawm) thiab kev txhawb nqa tom qab muag (hloov cov khoom graphite, kev ntsuas thermal field) los pab cov neeg siv khoom ua tiav cov khoom siv sic crystal zoo. Peb kuj muab cov kev pabcuam txhim kho txheej txheem kom txuas ntxiv txhim kho cov khoom siv crystal thiab kev loj hlob zoo, nrog rau lub sijhawm ua thawj coj ntawm 3-6 lub hlis.