Silicon Carbide (SiC) Wafer Nkoj

Silicon Carbide (SiC) Wafer Boat Featured duab

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Silicon Carbide (SiC) wafer nkoj yog cov txheej txheem semiconductor ua los ntawm high-purity SiC cov ntaub ntawv, tsim los tuav thiab thauj wafers thaum tseem ceeb kub txheej txheem xws li epitaxy, oxidation, diffusion, thiab annealing.

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Daim duab qhia ntxaws

Txheej txheem cej luam ntawm Quartz iav

Nrog rau txoj kev loj hlob sai ntawm lub hwj chim semiconductors thiab cov khoom siv dav dav, cov pa quartz tej nkoj nquam ntsib cov kev txwv xws li deformation ntawm qhov kub thiab txias, kev sib kis loj, thiab lub neej ua haujlwm luv. SiC wafer tej nkoj nquam, featuring superior thermal stability, tsis tshua muaj paug, thiab ntev lub neej, yog nce hloov quartz nkoj thiab ua qhov kev xaiv nyob rau hauv SiC ntaus ntawv tsim.

Cov yam ntxwv tseem ceeb

1. Cov khoom zoo

Ua los ntawm high-purity SiC nrogsiab hardness thiab lub zog.
Melting point saum 2700 ° C, siab dua quartz, ua kom muaj kev ruaj ntseg mus ntev hauv qhov chaw huab cua.

2. Cov khoom cua sov

High thermal conductivity rau kev hloov pauv sai thiab zoo sib xws, txo qis kev ntxhov siab wafer.
Coefficient ntawm thermal expansion (CTE) zoo sib xws SiC substrates, txo wafer bowing thiab cracking.

3. Tshuaj Stability

Nyob ruaj khov nyob rau hauv qhov kub thiab txias thiab ntau yam huab cua (H₂, N₂, Ar, NH₃, thiab lwm yam).
Zoo heev oxidation kuj, tiv thaiv decomposition thiab particle tiam.

4. Kev ua tau zoo

Smooth thiab ntom nto yuav txo tau particle shedding thiab paug.
Txhim kho qhov ruaj khov thiab muaj peev xwm thauj khoom tom qab siv mus ntev.

5. Tus nqi siv tau

3-5 zaug lub neej ua haujlwm ntev dua li cov nkoj quartz.
Tsawg txij nkawm, txo qis qis thiab hloov cov nqi.

Daim ntawv thov

SiC Epitaxy: Txhawb 4-nti, 6-nti, thiab 8-nti SiC substrates thaum lub sij hawm kub-kub epitaxial loj hlob.
Fais Fab Fabrication: Zoo tagnrho rau SiC MOSFETs, Schottky Barrier Diodes (SBDs), IGBTs, thiab lwm yam khoom siv.
Kev kho cua sov: Annealing, nitridation, thiab carbonization txheej txheem.
Oxidation & Diffusion: ruaj khov wafer txhawb platform rau high-kub oxidation thiab diffusion.

Technical Specifications

Yam khoom	Specification
Khoom siv	High-purity Silicon Carbide (SiC)
Wafer Loj	4-nti / 6-nti / 8-nti (customizable)
Max ua haujlwm Temp.	≤ 1800 ° C
Thermal Expansion CTE	4.2 × 10⁻⁶ / K (ze rau SiC substrate)
Thermal conductivity	120-200 W/m·K
Nto Roughness	Ra <0.2 μm
Parallelism	± 0.1 hli
Kev Pabcuam Lub Neej	≥ 3 × ntev dua quartz nkoj

Kev sib piv: Quartz Nkoj vs SiC Nkoj

Dimension	Quartz Nkoj	SiC nkoj
Kub Resistance	≤ 1200 ° C, deformation ntawm kub kub.	≤ 1800 ° C, thermally ruaj khov
CTE Match nrog SiC	Loj mismatch, pheej hmoo ntawm wafer kev nyuaj siab	Kaw match, txo wafer cracking
Particle Contamination	Siab, generates impurities	Tsawg, du thiab ntom ntom
Kev Pabcuam Lub Neej	luv luv, nquag hloov	Ntev, 3-5 × ntev lifespan
Txheej txheem tsim nyog	Conventional Si epitaxy	Optimized rau SiC epitaxy & cov khoom siv fais fab

FAQ - Silicon Carbide (SiC) Wafer Boats

1. Lub nkoj SiC wafer yog dab tsi?

SiC wafer nkoj yog cov txheej txheem semiconductor ua los ntawm high-purity silicon carbide. Nws yog siv los tuav thiab thauj wafers thaum lub sij hawm kub txheej txheem xws li epitaxy, oxidation, diffusion, thiab annealing. Piv nrog rau cov nkoj quartz ib txwm muaj, SiC wafer nkoj muaj kev ruaj ntseg zoo dua, kev sib kis tsawg dua, thiab kev pab lub neej ntev dua.

2. Vim li cas thiaj xaiv SiC wafer nkoj hla lub nkoj quartz?

Siab kub kuj: ruaj khov mus txog 1800 ° C vs. quartz (≤1200 ° C).
Zoo dua CTE match: Ze rau SiC substrates, txo qis wafer kev nyuaj siab thiab tawg.
Tsawg particle tiam: Smooth, ntom ntom ntom txo cov kab mob.
Lub neej ntev: 3-5 zaug ntev dua li cov nkoj quartz, txo tus nqi ntawm cov tswv cuab.

3. Dab tsi wafer loj tuaj yeem txhawb nqa SiC wafer nkoj?

Peb muab cov qauv tsim rau4-nti, 6-nti, thiab 8-ntiwafers, nrog tag nrho customization muaj kom tau raws li cov neeg xav tau kev pab.

4. Nyob rau hauv cov txheej txheem twg yog SiC wafer nkoj nquag siv?

SiC epitaxial kev loj hlob
Fais fab semiconductor ntaus ntawv tsim khoom (SiC MOSFETs, SBDs, IGBTs)
Kub-kub annealing, nitridation, thiab carbonization
Oxidation thiab diffusion txheej txheem

Txog Peb

XKH tshwj xeeb hauv kev tsim cov thev naus laus zis, tsim khoom, thiab muag cov iav tshwj xeeb kho qhov muag thiab cov ntaub ntawv siv lead ua tshiab. Peb cov khoom siv kho qhov muag khoom siv hluav taws xob, khoom siv hluav taws xob, thiab tub rog. Peb muab Sapphire optical Cheebtsam, xov tooj ntawm tes lens npog, Ceramics, LT, Silicon Carbide SIC, Quartz, thiab semiconductor siv lead ua wafers. Nrog cov kws tshaj lij thiab cov cuab yeej siv niaj hnub, peb ua tau zoo hauv kev ua cov khoom lag luam uas tsis yog tus qauv, aiming los ua ib qho khoom siv optoelectronic high-tech enterprise.