Silicon Dioxide wafer SiO2 wafer tuab Polished, Prime Thiab Test Qib

Kev Piav Qhia Luv:

Kev ua kom sov yog qhov tshwm sim ntawm kev ua rau lub silicon wafer raug kev sib xyaw ua ke ntawm cov neeg sawv cev oxidizing thiab cua sov los ua ib txheej ntawm silicon dioxide (SiO2). Peb lub tuam txhab tuaj yeem hloov kho silicon dioxide oxide flakes nrog cov kev teeb tsa sib txawv rau cov neeg siv khoom, nrog rau qhov zoo heev; qhov tuab ntawm txheej oxide, qhov sib xyaw ua ke, kev sib xws thiab kev tiv taus siv lead ua tau raws li cov qauv hauv tebchaws.


Cov yam ntxwv

Taw qhia ntawm lub thawv wafer

Khoom Cov Thermal Oxide (Si + SiO2) wafers
Txoj Kev Tsim Khoom LPCVD
Kev Txhuam Nto SSP/DSP
Txoj kab uas hla 2 nti / 3 nti / 4 nti / 5 nti / 6 nti
Hom Hom P / hom N
Oxidation Txheej tuab 100nm ~ 1000nm
Kev Taw Qhia <100> <111>
Kev tiv thaiv hluav taws xob 0.001-25000 (Ω • cm)
Daim Ntawv Thov Siv rau cov qauv hluav taws xob synchrotron, PVD / CVD txheej ua cov khoom siv substrate, magnetron sputtering kev loj hlob qauv, XRD, SEM,Lub zog atomic, infrared spectroscopy, fluorescence spectroscopy thiab lwm yam kev tshuaj xyuas cov substrates, molecular beam epitaxial growth substrates, X-ray tsom xam ntawm crystalline semiconductors

Cov silicon oxide wafers yog cov yeeb yaj kiab silicon dioxide uas loj hlob rau ntawm qhov chaw ntawm silicon wafers los ntawm kev siv oxygen lossis dej ua pa ntawm qhov kub siab (800 ° C ~ 1150 ° C) siv cov txheej txheem thermal oxidation nrog cov khoom siv cua sov siab. Lub thickness ntawm cov txheej txheem yog txij li 50 nanometers mus rau 2 microns, qhov kub ntawm cov txheej txheem yog txog li 1100 degrees Celsius, txoj kev loj hlob yog muab faib ua "pa oxygen ntub" thiab "pa oxygen qhuav" ob hom. Thermal Oxide yog ib txheej oxide "loj hlob", uas muaj kev sib xws siab dua, kev sib sau ua ke zoo dua thiab lub zog dielectric siab dua li CVD tso cov txheej oxide, ua rau muaj qhov zoo dua.

Kev Ua Pa Oxidation Qhuav

Silicon reacts nrog oxygen thiab cov txheej oxide yeej ib txwm txav mus rau cov txheej substrate. Kev oxidation qhuav yuav tsum tau ua ntawm qhov kub ntawm 850 txog 1200 ° C, nrog rau qhov kev loj hlob qis dua, thiab tuaj yeem siv rau kev loj hlob ntawm MOS insulated gate. Kev oxidation qhuav yog qhov zoo dua li kev oxidation ntub thaum xav tau cov txheej silicon oxide zoo, ultra-thin. Lub peev xwm oxidation qhuav: 15nm ~ 300nm.

2. Kev Oxidation Ntub Dej

Txoj kev no siv cov dej ua pa los tsim ib txheej oxide los ntawm kev nkag mus rau hauv lub raj cua sov hauv qab qhov kub siab. Qhov ntom ntawm cov pa oxygen oxidation ntub yog qhov phem dua li cov pa oxygen oxidation qhuav, tab sis piv rau cov pa oxygen oxidation qhuav nws qhov zoo yog tias nws muaj qhov nrawm dua, haum rau ntau dua 500nm zaj duab xis loj hlob. Muaj peev xwm oxidation ntub: 500nm ~ 2µm.

AEMD lub raj cua sov oxidation heater tube yog lub raj Czech kab rov tav, uas muaj cov txheej txheem ruaj khov siab, cov zaj duab xis zoo sib xws thiab kev tswj cov khoom me me zoo heev. Lub raj silicon oxide furnace tuaj yeem ua tiav txog li 50 wafers ib lub raj, nrog rau kev sib xws zoo heev hauv thiab nruab nrab wafers.

Daim duab qhia ntxaws ntxaws

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