Cov khoom siv hauv qab
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12 nti SIC substrate silicon carbide prime qib txoj kab uas hla 300 hli loj loj 4H-N Haum rau cov khoom siv hluav taws xob siab dissipation cua sov
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Dia300x1.0mmt Thickness Sapphire Wafer C-Dav Hlau SSP/DSP
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HPSI SiC wafer dia: 3 nti tuab: 350um ± 25 µm rau Fais Fab Electronics
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8 nti 200 hli Sapphire substrate sapphire wafer nyias tuab 1SP 2SP 0.5 hli 0.75 hli
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8 nti SiC silicon carbide wafer 4H-N hom 0.5 hli qib tsim khoom tshawb fawb qib kev cai polished substrate
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Ib leeg siv lead ua Al2O3 99.999% Dia200mm sapphire wafers 1.0mm 0.75mm tuab
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156mm 159mm 6 nti Sapphire Wafer rau cov neeg nqa khoom C-Plane DSP TTV
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C/A/M axis 4 nti sapphire wafers ib leeg siv lead ua Al2O3, SSP DSP siab hardness sapphire substrate
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3 nti High purity Semi-Insulating (HPSI) SiC wafer 350um Dummy qib Prime qib
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P-hom SiC substrate SiC wafer Dia2inch khoom tshiab
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8 nti 200 hli Silicon Carbide SiC Wafers 4H-N hom Qib ntau lawm 500um tuab
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2Nti 6H-N Silicon Carbide Substrate Sic Wafer Ob Chav Polished Conductive Prime Qib Mos Qib