Lub silicon carbide substrate muab faib ua semi-insulating hom thiab conductive hom. Tam sim no, cov ntsiab lus tseem ceeb ntawm semi-insulated silicon carbide substrate khoom yog 4 ntiv tes. Nyob rau hauv kev lag luam conductive silicon carbide, tam sim no mainstream substrate khoom specification yog 6 nti.
Vim yog cov ntawv sau cia hauv RF, ib nrab insulated SiC substrates thiab cov ntaub ntawv epitaxial raug xa tawm los ntawm US Department of Commerce. Semi-insulated SiC li substrate yog cov khoom nyiam rau GaN heteroepitaxy thiab muaj cov ntawv thov tseem ceeb hauv thaj chaw microwave. Piv nrog cov siv lead ua tsis sib haum ntawm sapphire 14% thiab Si 16.9%, cov khoom siv lead ua tsis sib haum ntawm SiC thiab GaN cov ntaub ntawv tsuas yog 3.4%. Coupled nrog ultra-siab thermal conductivity ntawm SiC, lub siab zog efficiency LED thiab GaN siab zaus thiab siab zog microwave li npaj los ntawm nws muaj zoo zoo nyob rau hauv radar, siab zog microwave khoom thiab 5G kev sib txuas lus systems.
Kev tshawb fawb thiab kev loj hlob ntawm semi-insulated SiC substrate yeej ib txwm yog lub hom phiaj ntawm kev tshawb fawb thiab kev loj hlob ntawm SiC ib leeg siv lead ua substrate. Muaj ob qhov teeb meem loj hauv kev loj hlob semi-insulated SiC cov ntaub ntawv:
1) Txo N pub dawb impurities qhia los ntawm graphite crucible, thermal rwb thaiv tsev adsorption thiab doping hauv hmoov;
2) Thaum ua kom ntseeg tau qhov zoo thiab cov khoom siv hluav taws xob ntawm cov khoom siv lead ua, qhov chaw sib sib zog nqus tau qhia kom them nyiaj rau cov seem qis qis qis nrog cov khoom siv hluav taws xob.
Tam sim no, cov chaw tsim khoom nrog cov khoom siv hluav taws xob semi-insulated SiC feem ntau yog SICC Co, Semisic Crystal Co, Tanke Blue Co, Hebei Synlight Crystal Co., Ltd.
Cov khoom siv lead ua SiC yog ua tiav los ntawm kev txhaj tshuaj nitrogen rau hauv qhov chaw loj hlob. Conductive silicon carbide substrate yog tsuas yog siv nyob rau hauv kev tsim cov khoom siv fais fab, silicon carbide fais fab khoom siv nrog high voltage, siab tam sim no, kub kub, siab zaus, tsawg poob thiab lwm yam tshwj xeeb zoo, yuav zoo heev txhim kho cov uas twb muaj lawm kev siv ntawm silicon raws li lub hwj chim pab kiag li lawm. hloov dua siab tshiab efficiency, muaj ib tug tseem ceeb thiab nyob deb-txoj kev cuam tshuam nyob rau hauv lub teb ntawm npaum zog conversion. Cov chaw thov tseem ceeb yog lub tsheb hluav taws xob / cov khoom siv hluav taws xob, hluav taws xob photovoltaic tshiab, kev tsheb ciav hlau hla, daim phiaj ntse thiab lwm yam. Vim tias qhov qis ntawm cov khoom siv hluav taws xob feem ntau yog cov khoom siv hluav taws xob hauv tsheb hluav taws xob, photovoltaic thiab lwm qhov chaw, daim ntawv thov kev cia siab yog dav dua, thiab cov neeg tsim khoom muaj ntau ntau.
Silicon carbide crystal type: Cov qauv zoo tshaj plaws ntawm 4H crystalline silicon carbide tuaj yeem muab faib ua ob pawg, ib qho yog cubic silicon carbide siv lead ua hom sphalerite qauv, hu ua 3C-SiC lossis β-SiC, thiab lwm yam yog hexagonal. los yog pob zeb diamond qauv ntawm lub sij hawm loj qauv, uas yog ib yam ntawm 6H-SiC, 4H-sic, 15R-SiC, thiab lwm yam., collectively hu ua α-SiC. 3C-SiC muaj qhov zoo ntawm kev tiv thaiv siab hauv kev tsim khoom. Txawm li cas los xij, qhov tsis sib haum xeeb siab ntawm Si thiab SiC lattice tas li thiab thermal expansion coefficients tuaj yeem ua rau muaj qhov tsis xws luag hauv 3C-SiC epitaxial txheej. 4H-SiC muaj peev xwm zoo hauv kev tsim MOSFETs, vim tias nws cov siv lead ua kev loj hlob thiab cov txheej txheem epitaxial txheej txheem kev loj hlob zoo dua, thiab hais txog kev txav hluav taws xob, 4H-SiC siab dua 3C-SiC thiab 6H-SiC, muab cov yam ntxwv zoo ntawm microwave rau 4H. -SiC MOSFETs.
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Post lub sij hawm: Lub Xya hli ntuj-16-2024