SiC
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12 nti SIC substrate silicon carbide prime qib txoj kab uas hla 300mm loj loj 4H-N Haum rau siab zog ntaus ntawv kub dissipation
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HPSI SiC wafer dia: 3inch thickness: 350um ± 25 µm rau fais fab Electronics
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8 nti SiC silicon carbide wafer 4H-N hom 0.5 hli ntau lawm qib kev tshawb fawb qib kev cai polished substrate
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3inch High purity Semi-Insulating (HPSI) SiC wafer 350um Dummy qib Prime qib
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P-hom SiC substrate SiC wafer Dia2inch khoom tshiab
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8inch 200mm Silicon Carbide SiC Wafers 4H-N hom Ntau lawm qib 500um thickness
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2 nti 6H-N Silicon Carbide Substrate Sic Wafer Ob Chav Polished Conductive Prime Qib Mos Qib
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SiC Epitaxial Wafer rau Cov Khoom Siv Hluav Taws Xob - 4H-SiC, N-hom, Tsawg Tsis Txaus Siab
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4H-N Hom SiC Epitaxial Wafer - High Voltage, Kev siv ntau zaus
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SiC ceramic kawg effector tuav caj npab rau wafer carring
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SiC ceramic phaj / tais rau 4inch 6inch wafer yas dhos rau ICP
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3 nti High Purity (Undoped) Silicon Carbide Wafers semi-Insulating Sic Substrates (HPSl)