First-generation Second-generation Thib peb-tiam semiconductor cov ntaub ntawv

Cov khoom siv semiconductor tau hloov zuj zus los ntawm peb tiam hloov pauv:

 

1st Gen (Si/Ge) tau tsim lub hauv paus ntawm cov khoom siv hluav taws xob niaj hnub no,

2nd Gen (GaAs/InP) tsoo los ntawm optoelectronic thiab high-frequency teeb meem rau lub hwj chim cov ntaub ntawv kiv puag ncig,

3rd Gen (SiC/GaN) tam sim no tackles lub zog thiab kev sib tw huab cua puag ncig, ua rau cov pa roj carbon nruab nrab thiab 6G era.

 

Qhov kev vam meej no qhia txog kev hloov pauv ntawm kev hloov pauv mus rau qhov tshwj xeeb hauv cov ntaub ntawv tshawb fawb.

Cov khoom siv semiconductor

1. First-Generation Semiconductors: Silicon (Si) thiab Germanium (Ge)

 

Keeb kwm keeb kwm

Xyoo 1947, Tswb Labs tau tsim lub germanium transistor, cim lub kaj ntug ntawm lub semiconductor era. Los ntawm xyoo 1950, silicon maj mam hloov germanium ua lub hauv paus ntawm kev sib xyaw ua ke (ICs) vim nws cov txheej txheem oxide ruaj khov (SiO₂) thiab cov khoom muaj txiaj ntsig zoo.

 

Khoom Khoom

Bandgap:

Germanium: 0.67eV (nqaim bandgap, nquag to to tam sim no, tsis zoo-kub ua haujlwm).

 

Silicon: 1.12eV (indirect bandgap, haum rau logic circuits tab sis tsis muaj peev xwm ntawm lub teeb emission).

 

Ⅱ,Qhov zoo ntawm Silicon:

Ib txwm tsim cov oxide zoo (SiO₂), ua rau MOSFET fabrication.

Tus nqi qis thiab lub ntiaj teb-ntau tshaj (~ 28% ntawm crustal muaj pes tsawg leeg).

 

Ⅲ,Kev txwv:

Kev txav hluav taws xob tsawg (tsuas yog 1500 cm² / (V·s)), txwv kev ua haujlwm siab.

Tsis muaj zog voltage / kub kam rau siab (max khiav hauj lwm temp. ~ 150 ° C).

 

Cov ntawv thov tseem ceeb

 

Ⅰ,Integrated Circuits (ICs):

CPUs, nco chips (xws li, DRAM, NAND) cia siab rau silicon rau kev sib koom ua ke siab.

 

Piv txwv li: Intel's 4004 (1971), thawj lub lag luam microprocessor, siv 10μm silicon technology.

 

Ⅱ,Cov khoom siv fais fab:

Thaum ntxov thyristors thiab qis-voltage MOSFETs (xws li, PC fais fab mov) yog silicon-based.

 

Challenges & Obsolescence

 

Germanium tau phased tawm vim to thiab thermal instability. Txawm li cas los xij, silicon cov kev txwv hauv optoelectronics thiab kev siv hluav taws xob siab tau txhawb nqa kev txhim kho ntawm cov khoom siv hluav taws xob tom ntej.

2Semiconductors Thib Ob: Gallium Arsenide (GaAs) thiab Indium Phosphide (InP)

Kev txhim kho keeb kwm yav dhau

Thaum lub sijhawm xyoo 1970-1980s, cov chaw tawm tshiab xws li kev sib txuas lus hauv xov tooj, kev sib txuas lus fiber ntau, thiab satellite technology tsim ib qho kev thov rau cov khoom siv optoelectronic ntau zaus. Qhov no tau tsav qhov kev nce qib ntawm kev ncaj qha bandgap semiconductors zoo li GaAs thiab InP.

Khoom Khoom

Bandgap & Optoelectronic Performance:

GaAs: 1.42eV (direct bandgap, enables light emission-zoo tagnrho rau lasers/LEDs).

InP: 1.34eV (zoo dua haum rau cov ntawv thov ntev-yoj, piv txwv li, 1550nm fiber-optic kev sib txuas lus).

Electron Mobility:

GaAs ua tiav 8500 cm² / (V·s), deb tshaj silicon (1500 cm² / (V·s)), ua rau nws zoo rau GHz-ntau cov teeb liab ua.

Qhov tsis zoo

lBrittle substrates: Nyuaj rau kev tsim dua li silicon; GaAs wafers raug nqi 10 × ntau dua.

lTsis muaj cov oxide ib txwm muaj: Tsis zoo li silicon's SiO₂, GaAs / InP tsis muaj oxides ruaj khov, cuam tshuam cov khoom siv IC siab.

Cov ntawv thov tseem ceeb

lRF Pem hauv ntej-Ends:

Mobile fais fab amplifiers (PAs), satellite transceivers (piv txwv li, GaAs-based HEMT transistors).

lOptoelectronics:

Laser diodes (CD / DVD tsav), LEDs (liab / infrared), fiber ntau optic modules (InP lasers).

lSpace Solar Cells:

GaAs hlwb ua tiav 30% efficiency (vs. ~ 20% rau silicon), tseem ceeb heev rau satellites. 

lTechnological Bottlenecks

Cov nqi siab txwv GaAs / InP rau niche high-end daim ntawv thov, tiv thaiv lawv los ntawm kev tshem tawm silicon qhov tseem ceeb hauv logic chips.

Thib Peb-Tsev Semiconductors (Wide-Bandgap Semiconductors): Silicon Carbide (SiC) thiab Gallium Nitride (GaN)

Technology Tsav Tsheb

Lub Zog Hluav Taws Xob: Cov tsheb hluav taws xob thiab kev sib txuas hluav taws xob txuas ntxiv dua tshiab xav tau cov khoom siv hluav taws xob ntau dua.

High-Frequency Needs: 5G kev sib txuas lus thiab radar systems xav tau ntau zaus thiab lub zog ceev.

Ib puag ncig huab cua: Aerospace thiab industrial motor applications xav tau cov ntaub ntawv muaj peev xwm tiv taus qhov kub siab tshaj 200 ° C.

Khoom yam ntxwv

Wide Bandgap Qhov Zoo:

lSiC: Bandgap ntawm 3.26eV, tawg hluav taws xob teb lub zog 10 × ntawm silicon, muaj peev xwm tiv taus qhov hluav taws xob tshaj 10kV.

lGaN: Bandgap ntawm 3.4eV, electron txav ntawm 2200 cm² / (V·s), ua tau zoo hauv kev ua haujlwm siab.

Thermal Management:

SiC's thermal conductivity ncav cuag 4.9 W / (cm·K), peb zaug zoo dua silicon, ua rau nws zoo tagnrho rau cov ntawv siv hluav taws xob siab.

Cov khoom sib tw

SiC: Kev loj hlob qeeb ib leeg-crystal yuav tsum tau kub siab tshaj 2000 ° C, ua rau wafer tsis xws luag thiab cov nqi siab (ib tug 6-nti SiC wafer yog 20 × kim dua silicon).

GaN: Tsis muaj lub ntuj substrate, feem ntau xav tau heteroepitaxy ntawm sapphire, SiC, los yog silicon substrates, ua rau cov teeb meem lattice mismatch.

Cov ntawv thov tseem ceeb

Lub zog Electronics:

EV inverters (piv txwv li, Tesla Model 3 siv SiC MOSFETs, txhim kho kev ua haujlwm ntawm 5-10%).

Fast-them chaw nres tsheb / adapters (GaN pab kiag li lawm pab 100W + ceev them thaum txo qhov loj los ntawm 50%).

RF khoom siv:

5G hauv paus chaw nres tsheb fais fab amplifiers (GaN-on-SiC PAs txhawb mmWave zaus).

Tub rog radar (GaN muaj 5 × lub zog ceev ntawm GaAs).

Optoelectronics:

UV LEDs (AlGaN cov ntaub ntawv siv hauv kev ua kom tsis muaj menyuam thiab ntsuas dej zoo).

Kev Lag Luam Status thiab Yav Tom Ntej Outlook

SiC tswj hwm lub lag luam siab zog, nrog cov tsheb-qib modules twb nyob rau hauv ntau lawm, txawm tias cov nqi tseem muaj teeb meem.

GaN tau nthuav dav sai hauv cov neeg siv khoom siv hluav taws xob (kev them nqi ceev) thiab RF daim ntawv thov, hloov mus rau 8-nti wafers.

Cov ntaub ntawv tawm tshiab xws li gallium oxide (Ga₂O₃, bandgap 4.8eV) thiab pob zeb diamond (5.5eV) tuaj yeem tsim ib "tiam plaub" ntawm cov khoom siv hluav taws xob, thawb qhov hluav taws xob tsis pub dhau 20kV.

Coexistence thiab Synergy ntawm Semiconductor Generations

Complementarity, Tsis Hloov:

Silicon tseem tseem nyob hauv logic chips thiab cov neeg siv khoom siv hluav taws xob (95% ntawm lub ntiaj teb semiconductor lag luam).

GaAs thiab InP tshwj xeeb hauv high-frequency thiab optoelectronic niches.

SiC/GaN yog irreplaceable nyob rau hauv lub zog thiab muaj kev siv.

Technology Integration Piv txwv:

GaN-on-Si: Muab GaN nrog tus nqi qis silicon substrates rau kev them nyiaj ceev thiab RF daim ntawv thov.

SiC-IGBT hybrid modules: Txhim kho daim phiaj hloov dua siab tshiab.

Yav tom ntej Trends:

Heterogeneous integration: Kev sib xyaw cov ntaub ntawv (xws li Si + GaN) ntawm ib lub nti kom sib npaug kev ua haujlwm thiab tus nqi.

Ultra-wide bandgap cov ntaub ntawv (piv txwv li, Ga₂O₃, pob zeb diamond) tuaj yeem ua rau ultra-high-voltage (> 20kV) thiab quantum suav daim ntawv thov.

Muaj feem cuam tshuam

GaAs laser epitaxial wafer 4 nti 6 nti

1 (2)

 

12 nti SIC substrate silicon carbide prime qib txoj kab uas hla 300mm loj loj 4H-N Haum rau siab zog ntaus ntawv kub dissipation

12inch Sic wafer 1

 


Post lub sij hawm: May-07-2025