Cov txheej txheem tseem ceeb rau kev npaj silicon ib leeg siv lead ua muaj xws li: Lub cev Vapor Thauj (PVT), Sab saum toj-Tshuaj daws Kev Loj Hlob (TSSG), thiab High-Temperature Chemical Vapor Deposition (HT-CVD). Ntawm cov no, PVT txoj kev tau siv dav hauv kev tsim khoom vim nws cov khoom siv yooj yim, kev tswj tau yooj yim, thiab cov cuab yeej siv qis thiab cov nqi ua haujlwm.
Cov ntsiab lus tseem ceeb rau PVT Kev Loj Hlob ntawm Silicon Carbide Crystals
Thaum loj hlob silicon carbide crystals siv lub cev Vapor Transport (PVT), txoj kev hauv qab no yuav tsum tau xav txog:
- Purity of Graphite Materials in Growth Chamber: Cov ntsiab lus impurity hauv graphite cov khoom yuav tsum qis dua 5 × 10⁻⁶, thaum cov ntsiab lus impurity hauv rwb thaiv tsev yuav tsum qis dua 10 × 10⁻⁶. Cov ntsiab lus xws li B thiab Al yuav tsum khaws cia hauv qab 0.1 × 10⁻⁶.
- Kev Xaiv Cov Noob Crystal Polarity: Cov kev tshawb fawb pom tau tias C (0001) lub ntsej muag haum rau kev loj hlob 4H-SiC crystals, thaum Si (0001) lub ntsej muag yog siv los loj hlob 6H-SiC crystals.
- Kev siv Off-Axis Seed Crystals: Off-axis noob siv lead ua tuaj yeem hloov kho qhov sib luag ntawm kev loj hlob siv lead ua, txo qhov tsis xws ntawm cov siv lead ua.
- High-Quality Seed Crystal Bonding txheej txheem.
- Kev ruaj ntseg ntawm Crystal Growth Interface thaum lub sij hawm kev loj hlob.
Cov thev naus laus zis tseem ceeb rau Silicon Carbide Crystal Loj hlob
- Doping Technology rau Silicon Carbide Hmoov
Doping cov hmoov silicon carbide nrog qhov tsim nyog ntawm Ce tuaj yeem txhim kho kev loj hlob ntawm 4H-SiC ib leeg muaju. Cov txiaj ntsig tau pom tau tias Ce doping tuaj yeem:
- Ua kom muaj kev loj hlob ntawm silicon carbide crystals.
- Tswj cov kev taw qhia ntawm kev loj hlob siv lead ua, ua rau nws zoo ib yam thiab tsis tu ncua.
- Tshem tawm impurity tsim, txo qhov tsis xws luag thiab ua kom yooj yim tsim cov khoom siv lead ua ib leeg thiab cov khoom siv zoo.
- Inhibit backside corrosion ntawm cov siv lead ua thiab txhim kho ib leeg-crystal tawm los.
- Axial thiab Radial Temperature Gradient Control Technology
Lub axial kub gradient feem ntau cuam tshuam rau kev loj hlob siv lead ua hom thiab efficiency. Ib qho me me ntawm qhov ntsuas kub ntau dhau tuaj yeem ua rau polycrystalline tsim thiab txo qis kev loj hlob. axial thiab radial kub gradients ua kom yooj yim SiC siv lead ua kev loj hlob sai thaum tuav ruaj khov siv lead ua zoo. - Basal Plane Dislocation (BPD) Tswj Technology
BPD qhov tsis xws luag feem ntau tshwm sim thaum shear stress nyob rau hauv lub siv lead ua tshaj qhov tseem ceeb shear stress ntawm SiC, activating slip systems. Txij li thaum BPDs yog perpendicular mus rau lub crystal kev loj hlob kev taw qhia, lawv feem ntau tsim thaum lub sij hawm siv lead ua loj hlob thiab txias. - Vapor Phase Composition Ratio Adjustment Technology
Kev nce qhov sib piv ntawm cov pa roj carbon-rau-silicon nyob rau hauv ib puag ncig kev loj hlob yog ib qho kev ntsuas zoo kom ruaj khov kev loj hlob ib leeg-crystal. Qhov sib piv ntawm carbon-rau-silicon ntau dua yuav txo tau cov kauj ruam loj, khaws cov noob siv lead ua cov ntaub ntawv loj hlob, thiab suppresses polytype tsim. - Tsawg-Stress Control Technology
Kev ntxhov siab thaum lub sij hawm siv lead ua tuaj yeem ua rau khoov ntawm cov dav hlau siv lead ua, ua rau cov khoom siv lead ua tsis zoo lossis txawm tawg. Kev ntxhov siab kuj tseem ua rau lub dav hlau basal dislocations, uas tuaj yeem cuam tshuam rau epitaxial txheej zoo thiab kev ua haujlwm ntawm cov cuab yeej.
6-nti SiC wafer scanning duab
Txoj kev los txo kev ntxhov siab hauv Crystals:
- Kho qhov kub thiab txias qhov chaw faib khoom thiab cov txheej txheem tsis ua kom muaj kev loj hlob ze-equilibrium ntawm SiC ib leeg muaju.
- Txhim kho cov qauv crucible kom pub dawb siv lead ua kev loj hlob nrog kev txwv tsawg.
- Hloov cov noob siv lead ua fixation cov tswv yim los txo cov thermal expansion mismatch ntawm cov noob siv lead ua thiab graphite yas dhos. Ib txoj hauv kev zoo tshaj plaws yog tawm ntawm 2 hli qhov sib txawv ntawm cov noob siv lead ua thiab graphite yas dhos.
- Txhim kho cov txheej txheem annealing los ntawm kev siv nyob rau hauv-situ cub annealing, kho annealing kub thiab lub sij hawm kom tag nrho tso siab rau sab hauv.
Yav Tom Ntej Trends Silicon Carbide Crystal Growth Technology
Saib tom ntej, zoo SiC ib leeg siv lead ua kev npaj thev naus laus zis yuav txhim kho hauv cov lus qhia hauv qab no:
- Loj Loj Loj Loj
Txoj kab uas hla ntawm silicon carbide ib leeg muaju tau hloov zuj zus los ntawm ob peb millimeters mus rau 6-nti, 8-nti, thiab ntau dua 12-nti. Loj-inch SiC crystals txhim kho kev tsim khoom, txo cov nqi, thiab ua tau raws li qhov xav tau ntawm cov khoom siv hluav taws xob siab. - Kev loj hlob zoo
High-zoo SiC ib leeg siv lead ua yog qhov tseem ceeb rau cov khoom siv ua haujlwm siab. Txawm hais tias muaj kev vam meej tseem ceeb, cov teeb meem xws li micropipes, dislocations, thiab impurities tseem muaj, cuam tshuam cov cuab yeej ua haujlwm thiab kev ntseeg tau. - Tus nqi txo
Tus nqi siab ntawm SiC crystal npaj txwv nws daim ntawv thov hauv qee thaj chaw. Txhim kho cov txheej txheem kev loj hlob zoo, txhim kho kev tsim khoom, thiab txo cov nqi ntawm cov khoom siv raw tuaj yeem pab txo cov nqi tsim khoom. - Kev Txawj Ntse
Nrog rau kev nce qib hauv AI thiab cov ntaub ntawv loj, SiC siv lead ua kev loj hlob technology yuav nce ntxiv cov kev daws teeb meem ntse. Kev saib xyuas thiab kev tswj xyuas lub sijhawm tiag tiag siv cov sensors thiab cov tshuab tsis siv neeg yuav txhim kho cov txheej txheem kev ruaj ntseg thiab kev tswj xyuas. Tsis tas li ntawd, cov ntaub ntawv loj analytics tuaj yeem txhim kho qhov kev loj hlob tsis zoo, txhim kho cov khoom siv lead ua zoo thiab kev ua haujlwm ntau lawm.
Kev ua tau zoo ntawm silicon carbide ib leeg siv lead ua kev npaj thev naus laus zis yog qhov tseem ceeb hauv kev tshawb fawb cov khoom siv semiconductor. Raws li kev siv thev naus laus zis, SiC siv lead ua kev loj hlob yuav txuas ntxiv mus, muab lub hauv paus ruaj khov rau kev siv hauv qhov kub-kub, siab zaus, thiab lub zog loj.
Post lub sij hawm: Lub Xya hli ntuj-25-2025