Cov Khoom Siv Tseem Ceeb rau Semiconductor Ntau Lawm: Hom Wafer Substrates

Wafer Substrates ua cov khoom tseem ceeb hauv cov khoom siv semiconductor

Wafer substrates yog lub cev nqa khoom ntawm cov khoom siv semiconductor, thiab lawv cov khoom siv ncaj qha txiav txim siab cov cuab yeej ua haujlwm, nqi, thiab daim ntawv thov. Hauv qab no yog cov hom tseem ceeb ntawm wafer substrates nrog rau lawv qhov zoo thiab qhov tsis zoo:

1.Silicon (Si)

• Kev Lag Luam Qhia:Tus account rau ntau tshaj 95% ntawm lub ntiaj teb no semiconductor kev ua lag luam.

• Qhov zoo:

  • Tus nqi qis:Ntau cov khoom siv raw (silicon dioxide), cov txheej txheem tsim khoom, thiab kev lag luam muaj zog ntawm nplai.

  • High txheej txheem compatibility:CMOS thev naus laus zis yog cov neeg paub tab, txhawb cov nodes siab heev (xws li 3nm).

  • Crystal zoo heev:Loj-ntev wafers (tsuas yog 12-nti, 18-nti nyob rau hauv txoj kev loj hlob) nrog qhov tsis xws luag tuaj yeem loj hlob.

  • Stable mechanical zog:Yooj yim rau txiav, polish, thiab kov.

• Qhov tsis zoo:

  • Narrow bandgap (1.12 eV):High leakage tam sim no ntawm qhov kub siab, txwv kev siv hluav taws xob siv hluav taws xob.

  • Indirect bandgap:Tsis tshua muaj lub teeb emission efficiency, tsis haum rau optoelectronic li xws li LEDs thiab lasers.

  • Limited electron mobility:Kev ua haujlwm qis qis dua piv rau cov khoom siv semiconductors.
    

2.Gallium Arsenide (GaAs)

• Daim ntawv thov:High-frequency RF li (5G/6G), optoelectronic li (lasers, solar cells).

• Qhov zoo:

  • High electron mobility (5-6 × ntawm silicon):Haum rau high-speed, high-frequency applications xws li millimeter-yoj kev sib txuas lus.

  • Direct bandgap (1.42 eV):High-efficiency photoelectric hloov dua siab tshiab, lub hauv paus ntawm infrared lasers thiab LEDs.

  • Kub kub thiab hluav taws xob tsis kam:Haum rau aerospace thiab hnyav ib puag ncig.

• Qhov tsis zoo:

  • Tus nqi siab:Cov khoom siv tsis tshua muaj, nyuaj siv lead ua loj hlob (nws yooj yim rau dislocations), txwv wafer loj (tsuas yog 6-nti).

  • Brittle mechanics:Yooj yim rau pob txha, ua rau cov khoom ua haujlwm qis.

  • Toxicity:Arsenic yuav tsum tau tuav nruj thiab tswj ib puag ncig.

3. Silicon Carbide (SiC)

• Daim ntawv thov:High-temperature thiab high-voltage power devices (EV inverters, charging stations), aerospace.

• Qhov zoo:

  • Dav dav bandgap (3.26 eV):Lub zog tawg siab (10 × ntawm silicon), kev ua haujlwm siab siab (kev ua haujlwm kub> 200 ° C).

  • High thermal conductivity (≈3 × silicon):Zoo heev tshav kub dissipation, enabling ntau zog zog ceev ceev.

  • Tsawg switching poob:Txhim kho lub zog conversion efficiency.

• Qhov tsis zoo:

  • Kev npaj nyuaj substrate:Kev loj hlob qeeb qeeb (> 1 lub lis piam), kev tswj tsis zoo (micropipes, dislocations), tus nqi siab heev (5-10 × silicon).

  • Me me wafer loj:Feem ntau 4-6 nti; 8-nti tseem tab tom txhim kho.

  • Yooj yim rau txheej txheem:Nyuaj heev (Mohs 9.5), txiav thiab polishing lub sij hawm siv.

4. Gallium Nitride (GaN)

• Daim ntawv thov:Cov khoom siv hluav taws xob ntau zaus (them them ceev, 5G chaw nres tsheb), xiav LEDs / lasers.

• Qhov zoo:

  • Ultra-high electron mobility + wide bandgap (3.4 eV):Ua ke nrog high-frequency (> 100 GHz) thiab high-voltage kev ua tau zoo.

  • Tsawg-resistance:Txo cov cuab yeej hluav taws xob poob.

  • Heteroepitaxy tau tshaj:Feem ntau zus ntawm silicon, sapphire, los yog SiC substrates, txo nqi.

• Qhov tsis zoo:

  • Kev loj hlob ib leeg-crystal nyuaj nyuaj:Heteroepitaxy yog qhov tseem ceeb, tab sis lattice mismatch qhia qhov tsis xws luag.

  • Tus nqi siab:Native GaN substrates yog kim heev (ib tug 2-nti wafer tuaj yeem raug nqi ntau txhiab USD).

  • Cov teeb meem kev ntseeg siab:Phenomena xws li tam sim no lub cev qhuav dej yuav tsum optimization.

5. Indium Phosphide (InP)

• Daim ntawv thov:High-speed optical kev sib txuas lus (lasers, photodetectors), terahertz li.

• Qhov zoo:

  • Ultra-high electron mobility:Txhawb kev ua haujlwm> 100 GHz, ua haujlwm zoo dua GaAs.

  • Direct bandgap nrog wavelength txuam:Cov khoom siv tseem ceeb rau 1.3-1.55 μm optical fiber kev sib txuas lus.

• Qhov tsis zoo:

  • Brittle thiab kim heev:Substrate nqi tshaj 100 × silicon, txwv wafer qhov ntau thiab tsawg (4-6 nti).

6. Sapphire (Al₂O₃)

• Daim ntawv thov:LED teeb pom kev zoo (GaN epitaxial substrate), cov neeg siv khoom siv hluav taws xob npog iav.

• Qhov zoo:

  • Tus nqi qis:Ntau pheej yig dua SiC/GaN substrates.

  • Zoo heev tshuaj stability:Corrosion-resistant, heev insulating.

  • Pob tshab:Haum rau ntsug LED qauv.

• Qhov tsis zoo:

  • Loj lattice mismatch nrog GaN (> 13%):Ua rau muaj kev kub ntxhov siab tsis zoo, xav tau cov tsis muaj luffer.

  • Tsis zoo thermal conductivity (~ 1/20 ntawm silicon):Txwv kev ua haujlwm ntawm lub zog siab LEDs.

7. Ceramic Substrates (AlN, BeO, thiab lwm yam)

• Daim ntawv thov:Thaum tshav kub kub spreaders rau high-power modules.

• Qhov zoo:

  • Insulating + siab thermal conductivity (AlN: 170-230 W / m·K):Haum rau kev ntim khoom siab.

• Qhov tsis zoo:

  • Tsis yog-crystal:Tsis tuaj yeem txhawb nqa kev loj hlob ntawm cov cuab yeej, tsuas yog siv los ua cov ntim substrates.

8. Tshwj xeeb substrates

• SOI (Silicon ntawm Insulator):

  • Qauv:Silicon / SiO₂ / silicon sandwich.

  • Qhov zoo:Txo cov kab mob parasitic capacitance, hluav taws xob-hardened, leakage suppression (siv hauv RF, MEMS).

  • Qhov tsis zoo:30-50% kim tshaj li bulk silicon.

• Quartz (SiO₂):Siv hauv photomasks thiab MEMS; high-temperature kuj tab sis nkig heev.

• Pob zeb diamond:Siab tshaj thermal conductivity substrate (> 2000 W / m·K), nyob rau hauv R & D rau huab cua kub dissipation.

Daim ntawv qhia txog kev sib piv

Yam tseem ceeb rau kev xaiv substrate

• Cov kev xav tau ntawm kev ua haujlwm:GaAs/InP rau high-frequency; SiC rau high-voltage, high-temperature; GaAs/InP/GaN rau optoelectronics.

• Kev txwv tsis pub siv nyiaj:Cov khoom siv hluav taws xob nyiam silicon; high-end teb tuaj yeem ua pov thawj rau SiC / GaN cov nqi them.

• Integration complexity:Silicon tseem irreplaceable rau CMOS compatibility.

• Thermal tswj:Cov ntawv siv hluav taws xob siab nyiam SiC lossis pob zeb diamond-based GaN.

• Supply chain maturity:Si > Sapphire > GaAs > SiC > GaN > InP.

Yav tom ntej Trend

Heterogeneous integration (piv txwv li, GaN-on-Si, GaN-on-SiC) yuav sib npaug kev ua tau zoo thiab tus nqi, tsav kev nce qib hauv 5G, hluav taws xob tsheb, thiab quantum xam.