SiC wafer's abstract
Silicon carbide (SiC) wafers tau dhau los ua lub substrate ntawm kev xaiv rau high-power, high-frequency, thiab high-temperature electronics thoob plaws automotive, renewable zog, thiab aerospace sectors. Peb cov ntaub ntawv npog npog tseem ceeb polytypes thiab doping schemes-nitrogen-doped 4H (4H-N), high-purity semi-insulating (HPSI), nitrogen-doped 3C (3C-N), thiab p-hom 4H / 6H (4H / 6H-P) - muaj nyob rau hauv peb qib zoo: PRIME (tag nrho cov khoom siv polished), txheej txheem kev sim), thiab RESEARCH (kev cai epi txheej thiab doping profiles rau R&D). Wafer diameters span 2 ", 4", 6 ", 8", thiab 12" kom haum rau ob qho tib si legacy cuab yeej thiab siab heev fabs. Peb kuj muab monocrystalline boules thiab precisely oriented noob siv lead ua los pab txhawb kev loj hlob hauv tsev siv lead ua.
Peb 4H-N wafers muaj cov cab kuj ceev los ntawm 1 × 10¹⁶ mus rau 1 × 10¹⁹ cm⁻³ thiab resistivities ntawm 0.01-10 Ω·cm, xa cov khoom siv hluav taws xob zoo heev thiab kev tawg ua haujlwm siab tshaj 2 MV / cm-zoo tagnrho rau Schottky diodes, JFETs, thiab MOSFETs. HPSI substrates tshaj 1 × 10¹² Ω·cm resistivity nrog micropipe ntom hauv qab 0.1 cm⁻², kom ntseeg tau tias tsawg heev rau cov khoom siv RF thiab microwave. Cubic 3C-N, muaj nyob rau hauv 2 "thiab 4" hom, ua rau heteroepitaxy ntawm silicon thiab txhawb nqa cov ntawv thov tshiab photonic thiab MEMS. P-hom 4H / 6H-P wafers, doped nrog txhuas mus rau 1 × 10¹⁶–5 × 10¹⁸ cm⁻³, pab txhawb cov cuab yeej sib txuas ntxiv.
PRIME wafers tau txais tshuaj-mechanical polishing rau <0.2 nm RMS nto roughness, tag nrho thickness variation nyob rau hauv 3 µm, thiab hneev <10 µm. DUMMY substrates nrawm sib dhos thiab ntim cov ntawv xeem, thaum RESEARCH wafers feature epi-txheej thicknesses ntawm 2-30 µm thiab bespoke doping. Tag nrho cov khoom muaj ntawv pov thawj los ntawm X-ray diffraction (pob zeb nkhaus <30 arcsec) thiab Raman spectroscopy, nrog rau kev ntsuam xyuas hluav taws xob-Hall ntsuas, C-V profileing, thiab micropipe scanning- kom ntseeg tau tias JEDEC thiab SEMI ua raws.
Boules mus txog 150 mm txoj kab uas hla yog zus los ntawm PVT thiab CVD nrog dislocation densities hauv qab no 1 × 10³ cm⁻² thiab tsawg micropipe suav. Cov noob muaju raug txiav tsis pub dhau 0.1 ° ntawm c-axis los lav qhov kev loj hlob tuaj yeem loj hlob thiab siab slicing yields.
Los ntawm kev sib txuas ntau yam polytypes, doping variants, qib zoo, wafer qhov ntau thiab tsawg, thiab hauv tsev boule thiab noob-crystal ntau lawm, peb SiC substrate platform streamlines muab chains thiab accelerates cov cuab yeej tsim kho rau hluav taws xob tsheb, ntse daim phiaj, thiab hnyav-ib puag ncig daim ntaub ntawv.
SiC wafer's abstract
Silicon carbide (SiC) wafers tau dhau los ua lub substrate ntawm kev xaiv rau high-power, high-frequency, thiab high-temperature electronics thoob plaws automotive, renewable zog, thiab aerospace sectors. Peb cov ntaub ntawv npog npog tseem ceeb polytypes thiab doping schemes-nitrogen-doped 4H (4H-N), high-purity semi-insulating (HPSI), nitrogen-doped 3C (3C-N), thiab p-hom 4H / 6H (4H / 6H-P) - muaj nyob rau hauv peb qib zoo: PRIME (tag nrho cov khoom siv polished), txheej txheem kev sim), thiab RESEARCH (kev cai epi txheej thiab doping profiles rau R&D). Wafer diameters span 2 ", 4", 6 ", 8", thiab 12" kom haum rau ob qho tib si legacy cuab yeej thiab siab heev fabs. Peb kuj muab monocrystalline boules thiab precisely oriented noob siv lead ua los pab txhawb kev loj hlob hauv tsev siv lead ua.
Peb 4H-N wafers muaj cov cab kuj ceev los ntawm 1 × 10¹⁶ mus rau 1 × 10¹⁹ cm⁻³ thiab resistivities ntawm 0.01-10 Ω·cm, xa cov khoom siv hluav taws xob zoo heev thiab kev tawg ua haujlwm siab tshaj 2 MV / cm-zoo tagnrho rau Schottky diodes, JFETs, thiab MOSFETs. HPSI substrates tshaj 1 × 10¹² Ω·cm resistivity nrog micropipe ntom hauv qab 0.1 cm⁻², kom ntseeg tau tias tsawg heev rau cov khoom siv RF thiab microwave. Cubic 3C-N, muaj nyob rau hauv 2 "thiab 4" hom, ua rau heteroepitaxy ntawm silicon thiab txhawb nqa cov ntawv thov tshiab photonic thiab MEMS. P-hom 4H / 6H-P wafers, doped nrog txhuas mus rau 1 × 10¹⁶–5 × 10¹⁸ cm⁻³, pab txhawb cov cuab yeej sib txuas ntxiv.
PRIME wafers tau txais tshuaj-mechanical polishing rau <0.2 nm RMS nto roughness, tag nrho thickness variation nyob rau hauv 3 µm, thiab hneev <10 µm. DUMMY substrates nrawm sib dhos thiab ntim cov ntawv xeem, thaum RESEARCH wafers feature epi-txheej thicknesses ntawm 2-30 µm thiab bespoke doping. Tag nrho cov khoom muaj ntawv pov thawj los ntawm X-ray diffraction (pob zeb nkhaus <30 arcsec) thiab Raman spectroscopy, nrog rau kev ntsuam xyuas hluav taws xob-Hall ntsuas, C-V profileing, thiab micropipe scanning- kom ntseeg tau tias JEDEC thiab SEMI ua raws.
Boules mus txog 150 mm txoj kab uas hla yog zus los ntawm PVT thiab CVD nrog dislocation densities hauv qab no 1 × 10³ cm⁻² thiab tsawg micropipe suav. Cov noob muaju raug txiav tsis pub dhau 0.1 ° ntawm c-axis los lav qhov kev loj hlob tuaj yeem loj hlob thiab siab slicing yields.
Los ntawm kev sib txuas ntau yam polytypes, doping variants, qib zoo, wafer qhov ntau thiab tsawg, thiab hauv tsev boule thiab noob-crystal ntau lawm, peb SiC substrate platform streamlines muab chains thiab accelerates cov cuab yeej tsim kho rau hluav taws xob tsheb, ntse daim phiaj, thiab hnyav-ib puag ncig daim ntaub ntawv.
SiC wafer's duab
6inch 4H-N hom SiC wafer cov ntaub ntawv
| 6inch SiC wafers cov ntaub ntawv | ||||
| Parameter | Sub Parameter | Z Qib | P Qib | D Qib |
| Txoj kab uas hla | 149.5–150.0 hli | 149.5–150.0 hli | 149.5–150.0 hli | |
| Thickness | 4 H-N | 350 µm ± 15 µm | 350 µm ± 25 µm | 350 µm ± 25 µm |
| Thickness | 4 H-SI | 500 µm ± 15 µm | 500 µm ± 25 µm | 500 µm ± 25 µm |
| Wafer Orientation | Tawm axis: 4.0 ° mus rau <11-20> ± 0.5 ° (4H-N); Ntawm axis: <0001> ± 0.5 ° (4H-SI) | Tawm axis: 4.0 ° mus rau <11-20> ± 0.5 ° (4H-N); Ntawm axis: <0001> ± 0.5 ° (4H-SI) | Tawm axis: 4.0 ° mus rau <11-20> ± 0.5 ° (4H-N); Ntawm axis: <0001> ± 0.5 ° (4H-SI) | |
| Micropipe ntom ntom | 4 H-N | ≤ 0.2 cm⁻² | ≤ 2 cm⁻² | ≤ 15 cm⁻² |
| Micropipe ntom ntom | 4 H-SI | ≤ 1 cm⁻² | ≤ 5 cm⁻² | ≤ 15 cm⁻² |
| Kev tiv thaiv | 4 H-N | 0.015-0.024 Ω · cm | 0.015-0.028 Ω · cm | 0.015-0.028 Ω · cm |
| Kev tiv thaiv | 4 H-SI | ≥ 1 × 10¹⁰ Ω·cm | ≥ 1 × 10⁵ Ω·cm | |
| Thawj Txoj Kev Ncaj Ncees | [10-10] ± 5.0° | [10-10] ± 5.0° | [10-10] ± 5.0° | |
| Qhov Loj Loj Loj | 4 H-N | 47.5 hli ± 2.0 hli | ||
| Qhov Loj Loj Loj | 4 H-SI | Ntsig | ||
| Ntug Exclusion | 3 hli | |||
| Warp/LTV/TTV/Bow | ≤2.5 µm / ≤6 µm / ≤25 µm / ≤35 µm | ≤5 µm / ≤15 µm / ≤40 µm / ≤60 µm | ||
| Roughness | Polish | Ra ≤ 1 nm | ||
| Roughness | CMP | Ra ≤ 0.2 nm | Ra ≤ 0.5nm | |
| Ntug Cracks | Tsis muaj | Qhov ntev ≤ 20 mm, ib leeg ≤ 2 mm | ||
| Hex daim hlau | Qhov ntau thiab tsawg ≤ 0.05% | Cov cheeb tsam ≤ 0.1% | Qhov ntau thiab tsawg ≤ 1% | |
| Polytype Areas | Tsis muaj | Qhov ntau thiab tsawg ≤ 3% | Qhov ntau thiab tsawg ≤ 3% | |
| Carbon suav nrog | Qhov ntau thiab tsawg ≤ 0.05% | Qhov ntau thiab tsawg ≤ 3% | ||
| Nto Scratches | Tsis muaj | Qhov ntev ≤ 1 × wafer txoj kab uas hla | ||
| Ntug Chips | Tsis muaj kev tso cai ≥ 0.2 mm dav & qhov tob | Txog li 7 nti, ≤ 1 hli txhua | ||
| TSD (Threading Screw Dislocation) | ≤ 500 cm⁻² | N/A | ||
| BPD (Base Plane Dislocation) | ≤ 1000 cm⁻² | N/A | ||
| Nto Cov Kab Mob | Tsis muaj | |||
| Ntim | Multi-wafer cassette los yog ib lub thawv wafer | Multi-wafer cassette los yog ib lub thawv wafer | Multi-wafer cassette los yog ib lub thawv wafer | |
4inch 4H-N hom SiC wafer cov ntaub ntawv
| 4inch SiC wafer cov ntaub ntawv | |||
| Parameter | Zero MPD Production | Standard Qhuav Qib (P Qib) | Qib Dummy (D qib) |
| Txoj kab uas hla | 99.5mm-100.0 hli | ||
| Thickness (4H-N) | 350 µm ± 15 µm | 350 µm ± 25 µm | |
| Thickness (4H-Si) | 500 µm ± 15 µm | 500 µm ± 25 µm | |
| Wafer Orientation | Tawm axis: 4.0 ° mus rau <1120> ± 0.5 ° rau 4H-N; Ntawm axis: <0001> ± 0.5 ° rau 4H-Si | ||
| Micropipe ntom ntom (4H-N) | ≤0.2cm⁻² | ≤ 2 cm⁻² | ≤15 cm⁻² |
| Micropipe ntom ntom (4H-Si) | ≤1cm⁻² | ≤ 5 cm⁻² | ≤15 cm⁻² |
| Kev tiv thaiv (4H-N) | 0.015-0.024 Ω · cm | 0.015-0.028 Ω · cm | |
| Kev tiv thaiv (4H-Si) | ≥1E10 Ω·cm | ≥1E5 Ω·cm | |
| Thawj Txoj Kev Ncaj Ncees | [10-10] ± 5.0° | ||
| Qhov Loj Loj Loj | 32.5 hli ± 2.0 hli | ||
| Secondary Flat Length | 18.0 hli ± 2.0 hli | ||
| Secondary Flat Orientation | Silicon ntsej muag: 90 ° CW los ntawm prime ca ± 5.0 ° | ||
| Ntug Exclusion | 3 hli | ||
| LTV/TTV/Bow Warp | ≤ 2.5 µm / ≤ 5 µm / ≤ 15 µm / ≤ 30 µm | ≤ 10 µm / ≤ 15 µm / ≤ 25 µm / ≤ 40 µm | |
| Roughness | Polish Ra ≤1 nm; CMP Ra ≤0.2nm | Ra ≤0.5nm | |
| Ntug Cracks Los ntawm High Intensity Light | Tsis muaj | Tsis muaj | Qhov ntev ≤10 hli; ib qhov ntev ≤2 hli |
| Hex Phaj Los Ntawm Lub Teeb Siab Siab | Thaj tsam ≤ 0.05% | Thaj tsam ≤ 0.05% | Qhov loj me ≤0.1% |
| Polytype Areas Los Ntawm Lub Teeb Siab Siab | Tsis muaj | Qhov loj me ≤ 3% | |
| Visual Carbon suav nrog | Thaj tsam ≤ 0.05% | Qhov loj me ≤ 3% | |
| Silicon Surface Scratches Los ntawm High Intensity Light | Tsis muaj | Qhov ntev ntev ≤1 wafer txoj kab uas hla | |
| Ntug Chips Los ntawm High Intensity Light | Tsis muaj kev tso cai ≥0.2 hli dav thiab qhov tob | 5 tso cai, ≤1mm txhua | |
| Silicon Surface Contamination Los ntawm High Intensity Light | Tsis muaj | ||
| Threading ntsia hlau dislocation | ≤ 500 cm⁻² | N/A | |
| Ntim | Multi-wafer cassette los yog ib lub thawv wafer | Multi-wafer cassette los yog ib lub thawv wafer | Multi-wafer cassette los yog ib lub thawv wafer |
4inch HPSI hom SiC wafer cov ntaub ntawv
| 4inch HPSI hom SiC wafer cov ntaub ntawv | |||
| Parameter | Zero MPD Qhuav Qib (Z Qib) | Standard Qhuav Qib (P Qib) | Qib Dummy (D qib) |
| Txoj kab uas hla | 99.5-100.0 hli | ||
| Thickness (4H-Si) | 500 µm ± 20 µm | 500 µm ± 25 µm | |
| Wafer Orientation | Tawm axis: 4.0 ° mus rau <11-20> ± 0.5 ° rau 4H-N; Ntawm axis: <0001> ± 0.5 ° rau 4H-Si | ||
| Micropipe ntom ntom (4H-Si) | ≤1cm⁻² | ≤ 5 cm⁻² | ≤15 cm⁻² |
| Kev tiv thaiv (4H-Si) | ≥1E9 Ω·cm | ≥1E5 Ω·cm | |
| Thawj Txoj Kev Ncaj Ncees | (10-10) ± 5.0° | ||
| Qhov Loj Loj Loj | 32.5 hli ± 2.0 hli | ||
| Secondary Flat Length | 18.0 hli ± 2.0 hli | ||
| Secondary Flat Orientation | Silicon ntsej muag: 90 ° CW los ntawm prime ca ± 5.0 ° | ||
| Ntug Exclusion | 3 hli | ||
| LTV/TTV/Bow Warp | ≤ 3 µm / ≤ 5 µm / ≤ 15 µm / ≤ 30 µm | ≤ 10 µm / ≤ 15 µm / ≤ 25 µm / ≤ 40 µm | |
| Roughness (C ntsej muag) | Polish | Ra ≤1nm | |
| Roughness (Si ntsej muag) | CMP | Ra ≤0.2nm | Ra ≤0.5nm |
| Ntug Cracks Los ntawm High Intensity Light | Tsis muaj | Qhov ntev ≤10 hli; ib qhov ntev ≤2 hli | |
| Hex Phaj Los Ntawm Lub Teeb Siab Siab | Thaj tsam ≤ 0.05% | Thaj tsam ≤ 0.05% | Qhov loj me ≤0.1% |
| Polytype Areas Los Ntawm Lub Teeb Siab Siab | Tsis muaj | Qhov loj me ≤ 3% | |
| Visual Carbon suav nrog | Thaj tsam ≤ 0.05% | Qhov loj me ≤ 3% | |
| Silicon Surface Scratches Los ntawm High Intensity Light | Tsis muaj | Qhov ntev ntev ≤1 wafer txoj kab uas hla | |
| Ntug Chips Los ntawm High Intensity Light | Tsis muaj kev tso cai ≥0.2 hli dav thiab qhov tob | 5 tso cai, ≤1mm txhua | |
| Silicon Surface Contamination Los ntawm High Intensity Light | Tsis muaj | Tsis muaj | |
| Threading Screw Dislocation | ≤ 500 cm⁻² | N/A | |
| Ntim | Multi-wafer cassette los yog ib lub thawv wafer | ||
Post lub sij hawm: Jun-30-2025