2 nti 50.8 hli Germanium Wafer Substrate Ib leeg siv lead ua 1SP 2SP
Cov Ntaub Ntawv Qhia Txog
Cov chips Germanium muaj cov khoom semiconductor. Tau ua lub luag haujlwm tseem ceeb hauv kev txhim kho cov khoom siv solid state physics thiab cov khoom siv hluav taws xob solid state. Germanium muaj qhov ceev yaj ntawm 5.32g / cm 3, germanium tej zaum yuav raug cais ua cov hlau nyias nyias, germanium tshuaj lom neeg ruaj khov, tsis cuam tshuam nrog huab cua lossis dej pa ntawm chav tsev kub, tab sis ntawm 600 ~ 700 ℃, germanium dioxide sai sai tsim. Tsis ua haujlwm nrog hydrochloric acid, dilute sulfuric acid. Thaum concentrated sulfuric acid raug cua sov, germanium yuav maj mam yaj. Hauv nitric acid thiab aqua regia, germanium yooj yim yaj. Cov nyhuv ntawm alkali kua rau germanium yog qhov tsis muaj zog heev, tab sis molten alkali hauv huab cua tuaj yeem ua rau germanium yaj sai sai. Germanium tsis ua haujlwm nrog carbon, yog li nws yog yaj hauv graphite crucible thiab yuav tsis raug pa phem los ntawm carbon. Germanium muaj cov khoom semiconductor zoo, xws li electron mobility, qhov mobility thiab lwm yam. Kev txhim kho ntawm germanium tseem muaj peev xwm zoo.
Cov Lus Qhia Tshwj Xeeb
| Txoj kev loj hlob | CZ | ||
| cov khoom siv crystal | Lub kaw lus cubic | ||
| Lattice tas li | a=5.65754 Å | ||
| Qhov Ceev | 5.323g/cm3 | ||
| Qhov kub yaj | 937.4 ℃ | ||
| Kev siv tshuaj doping | Kev tshem tawm doping | Doping-Sb | Doping-Ga |
| Hom | / | N | P |
| kev tiv thaiv | > 35Ωcm | 0.01 ~ 35 Ωcm | 0.05 ~ 35 Ωcm |
| EPD | ＜4 × 103∕cm2 | ＜4 × 103∕cm2 | ＜4 × 103∕cm2 |
| Txoj kab uas hla | 2 nti / 50.8 hli | ||
| Qhov tuab | 0.5 hli, 1.0 hli | ||
| Nto | DSP thiab SSP | ||
| Kev Taw Qhia | <100>, <110>, <111>, ± 0.5º | ||
| Ra | ≤5Å (5µm × 5µm) | ||
| Pob khoom | Pob khoom qib 100, chav qib 1000 | ||
Daim duab qhia ntxaws ntxaws
