2inch 50.8mm Germanium Wafer Substrate Ib leeg siv lead ua 1SP 2SP

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High purity germanium yog cov khoom siv semiconductor siv los tsim cov khoom siv semiconductor.Germanium ib leeg siv lead ua doped nrog cov kab tshwj xeeb impurities tuaj yeem siv los ua ntau yam transistors, rectifiers thiab lwm yam khoom siv.High purity germanium ib leeg siv lead ua muaj lub siab refraction coefficient, pob tshab rau infrared, tsis los ntawm pom thiab infrared teeb, yuav siv tau raws li ib tug prism los yog lens rau infrared teeb.Germanium tebchaw yog siv nyob rau hauv kev tsim cov fluorescent daim hlau thiab ntau yam siab refractive iav.Nws kuj yog siv nyob rau hauv hluav taws xob detectors thiab cov ntaub ntawv thermoelectric.

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Product Detail

Khoom cim npe

Cov ncauj lus kom ntxaws

Germanium chips muaj cov khoom siv semiconductor.Nws tau ua lub luag haujlwm tseem ceeb hauv kev txhim kho cov khoom hauv lub xeev physics thiab cov khoom siv hluav taws xob hauv lub xeev.Germanium muaj melting ntom ntawm 5.32g / cm3, germanium yuav raug cais raws li ib tug nyias nyias nyias hlau, germanium tshuaj stability, tsis cuam tshuam nrog huab cua los yog dej vapor ntawm chav tsev kub, tab sis nyob rau ntawm 600 ~ 700 ℃, germanium dioxide yog sai generated. .Tsis ua haujlwm nrog hydrochloric acid, dilute sulfuric acid.Thaum cov concentrated sulfuric acid yog rhuab, germanium yuav maj mam yaj.Hauv nitric acid thiab aqua regia, germanium yooj yim yaj.Cov nyhuv ntawm alkali daws ntawm germanium yog qhov tsis muaj zog, tab sis molten alkali hauv huab cua tuaj yeem ua rau germanium yaj sai.Germanium tsis ua hauj lwm nrog cov pa roj carbon, yog li nws yog melted nyob rau hauv ib tug graphite crucible thiab yuav tsis muaj paug los ntawm carbon.Germanium muaj cov khoom siv hluav taws xob zoo, xws li kev txav hluav taws xob, qhov txav mus los thiab lwm yam.Txoj kev loj hlob ntawm germanium tseem muaj peev xwm zoo.

Specification

Txoj kev loj hlob	CZ
Crystal kev tsim kho	Kub system
Lattice tas li	ib = 5.65754 Å
Qhov ntom	5.323g / cm3
Melting point	937.4 ℃
Doping	Un-doping	Doping-Sb	Doping-Ga
Hom	/	N	P
tsis kam	35Ω cm	0.01 ~ 35 Ω cm	0.05 ~ 35 Ω cm
EPD	4 × 10³∕cm2	4 × 10³∕cm2	4 × 10³∕cm2
Txoj kab uas hla	2 nti / 50.8mm
Thickness	0.5 hli, 1.0mm
Nto	DSP thiab SSP
Kev taw qhia	<100>, <110>, <111>, ± 0.5º
Ra	≤5Å (5µm × 5µm)
Pob	100 qib pob, 1000 qib chav