6 nti 150 hli Silicon Carbide SiC Wafers 4H-N hom rau MOS lossis SBD Kev Tshawb Fawb Ntau Lawm thiab Dummy qib

Kev Piav Qhia Luv:

Lub substrate silicon carbide ib leeg siv lead ua ke uas muaj 6-nti yog cov khoom siv ua tau zoo nrog cov khoom siv lub cev thiab tshuaj zoo heev. Ua los ntawm cov khoom siv silicon carbide ib leeg siv lead ua ke uas muaj purity siab, nws ua rau muaj kev ua tau zoo dua ntawm kev ua kom sov, kev ruaj khov ntawm lub cev, thiab kev tiv taus kub siab. Lub substrate no, ua los ntawm cov txheej txheem tsim khoom raug thiab cov ntaub ntawv zoo, tau dhau los ua cov khoom siv zoo tshaj plaws rau kev tsim cov khoom siv hluav taws xob ua haujlwm zoo hauv ntau qhov chaw.

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Cov yam ntxwv

Cov Ntawv Thov

Lub 6-nti silicon carbide ib leeg siv lead ua substrate ua lub luag haujlwm tseem ceeb hauv ntau yam lag luam. Ua ntej, nws yog siv dav hauv kev lag luam semiconductor rau kev tsim cov khoom siv hluav taws xob muaj zog xws li cov transistors fais fab, cov circuits sib xyaw, thiab cov modules fais fab. Nws cov thermal conductivity siab thiab kev tiv taus kub siab ua rau muaj kev sib cais cua sov zoo dua, ua rau muaj kev ua haujlwm zoo dua thiab kev ntseeg siab. Qhov thib ob, silicon carbide wafers yog qhov tseem ceeb hauv kev tshawb fawb rau kev tsim cov ntaub ntawv tshiab thiab cov khoom siv. Tsis tas li ntawd, silicon carbide wafer pom cov ntawv thov dav dav hauv thaj chaw ntawm optoelectronics, suav nrog kev tsim cov LEDs thiab laser diodes.

Cov Lus Qhia Txog Khoom

Lub substrate silicon carbide ib leeg siv lead ua ke uas muaj 6-nti muaj txoj kab uas hla ntawm 6 nti (kwv yees li 152.4 hli). Qhov roughness ntawm qhov chaw yog Ra < 0.5 nm, thiab qhov tuab yog 600 ± 25 μm. Lub substrate tuaj yeem hloov kho nrog N-hom lossis P-hom conductivity, raws li cov neeg siv khoom xav tau. Ntxiv mus, nws muaj kev ruaj khov zoo heev, muaj peev xwm tiv taus kev nyuaj siab thiab kev co.

Txoj kab uas hla		150 ± 2.0 hli (6 nti)
Qhov tuab		350 μm ± 25μm
Kev Taw Qhia		Nyob rau ntawm axis: <0001> ± 0.5 °		Tawm ntawm txoj kab: 4.0 ° mus rau 1120 ± 0.5 °
Polytype		4H
Kev tiv taus (Ω·cm)	4H-N	0.015 ~ 0.028 Ω·cm / 0.015 ~ 0.025ohm·cm
	4/6H-SI	>1E5
Kev taw qhia tiaj tus thawj		{10-10}±5.0°
Qhov ntev tiaj tus thawj (hli)		47.5 hli ± 2.5 hli
Ntug		Chamfer
TTV/Hneev nti/Warp (um)		≤15 / ≤40 / ≤60
AFM Pem Hauv Ntej (Si-lub ntsej muag)		Polish Ra≤1 nm
		CMP Ra≤0.5 nm
LTV		≤3μm (10mm * 10mm)	≤5μm (10mm * 10mm)		≤10μm (10mm * 10mm)
TTV		≤5μm	≤10μm		≤15μm
Cov tawv txiv kab ntxwv/cov qhov/cov kab nrib pleb/cov kab mob/cov xim av/cov kab txaij		Tsis muaj dab tsi	Tsis muaj dab tsi		Tsis muaj dab tsi
cov kab txaij		Tsis muaj dab tsi	Tsis muaj dab tsi		Tsis muaj dab tsi

Lub 6-nti silicon carbide ib leeg siv lead ua substrate yog ib qho khoom siv ua tau zoo siv dav hauv kev lag luam semiconductor, kev tshawb fawb, thiab optoelectronics. Nws muaj kev ua tau zoo heev thermal conductivity, mechanical stability, thiab high-temperature resistance, ua rau nws tsim nyog rau kev tsim cov khoom siv hluav taws xob muaj zog thiab kev tshawb fawb tshiab. Peb muab ntau yam specifications thiab kev xaiv kho kom haum rau ntau tus neeg siv khoom xav tau.Tiv tauj peb kom paub meej ntxiv txog silicon carbide wafers!