6inch 150mm Silicon Carbide SiC Wafers 4H-N hom rau MOS los yog SBD Kev Tshawb Fawb Ntau Lawm thiab Qib Dummy

6inch 150mm Silicon Carbide SiC Wafers 4H-N hom rau MOS los yog SBD Kev Tshawb Fawb Ntau Lawm thiab Dummy Qib Featured Duab

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6-nti silicon carbide ib leeg siv lead ua substrate yog cov khoom siv ua haujlwm siab nrog lub cev zoo thiab tshuaj lom neeg.Ua los ntawm high-purity silicon carbide ib leeg siv lead ua khoom, nws exhibits superior thermal conductivity, mechanical stability, thiab high-temperature kuj.Qhov no substrate, ua nrog precision manufacturing txheej txheem thiab cov ntaub ntawv zoo, tau dhau los ua cov khoom siv rau kev tsim cov khoom siv hluav taws xob zoo hauv ntau yam.

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6-nti silicon carbide ib leeg siv lead ua substrate ua lub luag haujlwm tseem ceeb hauv ntau qhov kev lag luam.Ua ntej, nws tau dav siv hauv kev lag luam semiconductor rau kev tsim cov khoom siv hluav taws xob siab xws li fais fab transistors, kev sib txuas ua ke, thiab lub zog modules.Nws cov thermal conductivity thiab high-temperature kuj pab kom zoo dua tshav kub dissipation, uas ua rau kev txhim kho efficiency thiab kev cia siab rau.Thib ob, silicon carbide wafers yog qhov tseem ceeb hauv kev tshawb fawb teb rau kev tsim cov khoom tshiab thiab cov khoom siv.Tsis tas li ntawd, silicon carbide wafer pom kev siv dav hauv thaj chaw ntawm optoelectronics, suav nrog kev tsim cov LEDs thiab laser diodes.

Khoom Specifications

6-nti silicon carbide ib leeg siv lead ua substrate muaj txoj kab uas hla ntawm 6 ntiv tes (kwv yees li 152.4 hli).Qhov saum npoo roughness yog Ra <0.5 nm, thiab thickness yog 600 ± 25 μm.Lub substrate tuaj yeem hloov kho nrog N-hom lossis P-hom conductivity, raws li cov neeg siv khoom xav tau.Ntxiv mus, nws nthuav tawm tshwj xeeb txhua yam kev ruaj ntseg, muaj peev xwm tiv taus siab thiab kev co.

Txoj kab uas hla		150 ± 2.0mm (6 nti)
Thickness		350μm ± 25μm
Kev taw qhia		Ntawm axis: <0001> ± 0.5 °		Tawm axis: 4.0 ° rau 1120 ± 0.5 °
Polytype		4H
Kev tiv thaiv (Ω·cm)	4 H-N	0.015 ~ 0.028 Ω·cm / 0.015 ~ 0.025ohm·cm
	4/6 H-SI	> 1E5
Thawj qhov chaw tiaj tiaj		{10-10} ± 5.0°
Thawj lub tiaj tiaj ntev (mm)		47.5 hli ± 2.5 hli
Ntug		Chamfer
TTV/How/Warp (um)		≤15 / ≤40 / ≤60
AFM Pem Hauv Ntej (Si-face)		Polish Ra≤1nm
		CMP Ra≤0.5nm
LTV		≤3μm (10mm * 10mm)	≤5μm (10mm * 10mm)		≤10μm (10mm * 10mm)
TTV		≤ 5μm	≤10μm		≤15μm
Txiv kab ntxwv tev / pits / cracks / contamination / stains / striations		Tsis muaj	Tsis muaj		Tsis muaj
indents		Tsis muaj	Tsis muaj		Tsis muaj

Lub 6-nti silicon carbide ib leeg siv lead ua substrate yog cov khoom siv ua haujlwm siab dav siv hauv semiconductor, kev tshawb fawb, andoptoelectronics industries.Nws muaj cov thermal conductivity zoo heev, mechanical stability, thiab high-temperature kuj, ua rau nws tsim nyog rau fabrication ntawm high-power hluav taws xob cov cuab yeej thiab cov ntaub ntawv tshiab tshawb fawb.Peb muab ntau yam specifications thiab customization xaiv kom tau raws li ntau haiv neeg xav tau.Tiv tauj peb kom paub meej ntxiv ntawm silicon carbide wafers!