SiC
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12 nti SIC substrate silicon carbide prime qib txoj kab uas hla 300mm loj loj 4H-N Haum rau siab zog ntaus ntawv kub dissipation
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8 nti SiC silicon carbide wafer 4H-N hom 0.5 hli ntau lawm qib kev tshawb fawb qib kev cai polished substrate
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HPSI SiC wafer dia: 3inch thickness: 350um ± 25 µm rau fais fab Electronics
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3inch High purity Semi-Insulating (HPSI) SiC wafer 350um Dummy qib Prime qib
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P-hom SiC substrate SiC wafer Dia2inch khoom tshiab
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8inch 200mm Silicon Carbide SiC Wafers 4H-N hom Ntau lawm qib 500um thickness
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2 nti 6H-N Silicon Carbide Substrate Sic Wafer Ob Chav Polished Conductive Prime Qib Mos Qib
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HPSI SiC Wafer ≥90% Transmittance Optical Qib rau AI / AR tsom iav
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Semi-Insulating Silicon Carbide (SiC) Substrate High-Purity Rau Ar Glasses
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4H-SiC Epitaxial Wafers rau Ultra-High Voltage MOSFETs (100-500 μm, 6 nti)
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SICOI (Silicon Carbide ntawm Insulator) Wafers SiC Film ON Silicon
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Silicon Carbide (SiC) Ib-Crystal Substrate - 10 × 10mm Wafer