SiC
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12 nti SIC substrate silicon carbide prime qib txoj kab uas hla 300 hli loj loj 4H-N Haum rau cov khoom siv hluav taws xob siab dissipation cua sov
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8 nti SiC silicon carbide wafer 4H-N hom 0.5 hli qib tsim khoom tshawb fawb qib kev cai polished substrate
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HPSI SiC wafer dia: 3 nti tuab: 350um ± 25 µm rau Fais Fab Electronics
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3 nti High purity Semi-Insulating (HPSI) SiC wafer 350um Dummy qib Prime qib
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P-hom SiC substrate SiC wafer Dia2inch khoom tshiab
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8 nti 200 hli Silicon Carbide SiC Wafers 4H-N hom Qib ntau lawm 500um tuab
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2Nti 6H-N Silicon Carbide Substrate Sic Wafer Ob Chav Polished Conductive Prime Qib Mos Qib
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12-Nti 4H-SiC wafer rau AR tsom iav
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HPSI SiC Wafer ≥90% Transmittance Optical Qib rau AI / AR Cov Tsom Iav
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Semi-Insulating Silicon Carbide (SiC) Substrate High-Purity Rau Ar Cov Iav
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4H-SiC Epitaxial Wafers rau Ultra-High Voltage MOSFETs (100–500 μm, 6 nti)
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SICOI (Silicon Carbide ntawm Insulator) Wafers SiC Zaj duab xis NTAWM Silicon