12 nti SiC Substrate N Hom Loj Loj Siab Ua Haujlwm RF Daim Ntawv Thov

Lus piav qhia luv luv:

Lub 12-nti SiC substrate sawv cev rau kev nce qib hauv cov khoom siv hluav taws xob semiconductor, muab cov txiaj ntsig hloov pauv rau hluav taws xob hluav taws xob thiab kev siv ntau zaus. Raws li kev lag luam cov khoom lag luam loj tshaj plaws uas muaj silicon carbide wafer hom, 12-nti SiC substrate ua rau muaj kev lag luam uas tsis tau muaj dhau los ntawm kev teev thaum tswj cov khoom siv qhov zoo ntawm cov khoom siv dav dav thiab cov khoom tshwj xeeb thermal. Piv rau cov pa 6-nti los yog me dua SiC wafers, 12-nti platform muab tshaj 300% ntau siv tau rau ib cheeb tsam wafer, ua rau kom tuag tawm los thiab txo cov nqi tsim khoom siv hluav taws xob. Qhov kev hloov pauv loj no tsom rau qhov kev hloov pauv keeb kwm ntawm silicon wafers, qhov twg txhua txoj kab uas hla nce coj tus nqi txo thiab txhim kho kev ua haujlwm. Lub 12-nti SiC substrate lub superior thermal conductivity (ze li ntawm 3 × ntawm silicon) thiab siab tseem ceeb heev tawg teb lub zog ua rau nws tshwj xeeb tshaj yog tseem ceeb rau tiam tom ntej 800V hluav taws xob tsheb systems, qhov uas nws enables ntau compact thiab npaum zog modules. Hauv 5G infrastructure, cov khoom siv hluav taws xob siab saturation tshaj tawm tso cai rau RF cov cuab yeej ua haujlwm ntawm ntau zaus nrog kev poob qis. Lub substrate kev sib raug zoo nrog kev hloov kho silicon cov cuab yeej tsim khoom kuj tseem ua kom yooj yim rau kev saws me nyuam los ntawm cov fab uas twb muaj lawm, txawm tias kev tuav tshwj xeeb yuav tsum tau vim yog SiC qhov hardness (9.5 Mohs). Raws li cov khoom ntim ntau ntxiv, 12-nti SiC substrate yuav tsum dhau los ua tus qauv kev lag luam rau kev siv hluav taws xob siab, tsav kev tsim kho tshiab thoob plaws tsheb, lub zog tauj dua tshiab, thiab cov tshuab hluav taws xob hloov hluav taws xob.

Xa email rau peb

Product Detail

Khoom cim npe

Technical parameters

12 nti Silicon Carbide (SiC) Substrate Specification
Qib		ZeroMPD Production Qib (Z Qib)	Txheem ntau lawm Qib (P Qib)		Dummy Qib (D Qib)
Txoj kab uas hla		300mm ~ 1305mm
Thickness	4 H-N	750μm ± 15μm	750μm ± 25μm
	4 H-SI	750μm ± 15μm	750μm ± 25μm
Wafer Orientation		Tawm axis: 4.0 ° mus rau <1120> ± 0.5 ° rau 4H-N, On axis: <0001> ± 0.5 ° rau 4H-SI
Micropipe ntom ntom	4 H-N	≤0.4cm-2	≤4cm-2		≤25cm-2
	4 H-SI	≤5cm-2	≤10cm-2		≤25cm-2
Kev tiv thaiv	4 H-N	0.015 ~ 0.024 Ω·cm			0.015 ~ 0.028 Ω·cm
	4 H-SI	≥1E10 Ω·cm			≥1E5 Ω·cm
Thawj Txoj Kev Ncaj Ncees		{10-10} ± 5.0°
Qhov Loj Loj Loj	4 H-N	N/A
	4 H-SI	Ntsig
Ntug Exclusion		3 hli
LTV/TTV/How/Warp		≤5μm / ≤15μm / ≤35μm / ≤55μm			≤ 5μm / ≤15μm / ≤35 □ μm / ≤55 □ μm
Roughness		Polish Ra≤1nm
		CMP Ra≤0.2nm			Ra≤0.5nm
Ntug Cracks Los ntawm High Intensity Light Hex Phaj Los Ntawm Lub Teeb Siab Siab Polytype Areas Los Ntawm Lub Teeb Siab Siab Visual Carbon suav nrog Silicon Surface Scratches Los ntawm High Intensity Light		Tsis muaj Thaj tsam ≤ 0.05% Tsis muaj Thaj tsam ≤ 0.05% Tsis muaj			Qhov ntev ≤ 20 hli, ib qhov ntev ≤ 2 hli Qhov loj me ≤0.1% Thaj tsam ≤ 3% Qhov loj me ≤ 3% Qhov ntev ≤1 × wafer txoj kab uas hla
Ntug Chips Los ntawm High Intensity Light		Tsis muaj kev tso cai ≥0.2mm dav thiab qhov tob			7 tso cai, ≤1mm txhua
(TSD) Threading ntsia hlau dislocation		≤500cm-2		N/A
(BPD) Base dav hlau dislocation		≤1000cm-2		N/A
Silicon Surface Contamination Los ntawm High Intensity Light		Tsis muaj
Ntim		Multi-wafer Cassette lossis Ib Lub Thawv Wafer
Nco tseg:
1 Cov kev txwv tsis raug siv rau tag nrho wafer nto tshwj tsis yog rau thaj tsam ntawm ntug kev cais tawm. 2 Cov khawb yuav tsum tau kuaj xyuas ntawm Si ntsej muag nkaus xwb. 3 Cov ntaub ntawv dislocation tsuas yog los ntawm KOH etched wafers.

Ntsiab nta

1. Qhov Zoo Tshaj Loj Loj: 12-nti SiC substrate (12-nti silicon carbide substrate) muaj thaj tsam loj dua ib qho wafer, ua kom muaj ntau cov chips los tsim ib lub wafer, yog li txo cov nqi tsim khoom thiab nce yield.
2. Cov Khoom Siv Ua Haujlwm Zoo: Silicon carbide qhov kub thiab txias ua haujlwm siab ua rau 12-nti substrate zoo tagnrho rau high-voltage thiab high-frequency daim ntaub ntawv, xws li EV inverters thiab fast-charging systems.
3. Kev Ua Tau Zoo: Txawm tias muaj kev nyuaj siab thiab kev ua haujlwm nyuaj ntawm SiC, 12-nti SiC substrate ua tiav qhov tsis xws luag hauv qab ntawm cov txheej txheem txiav thiab polishing, txhim kho cov khoom tawm los.
4. Superior Thermal Management: Nrog rau cov thermal conductivity zoo dua li cov khoom siv silicon, 12-nti substrate ua haujlwm tau zoo thaum tshav kub kub dissipation hauv cov cuab yeej siv hluav taws xob siab, ua kom cov cuab yeej siv tau ntev.

Cov ntawv thov tseem ceeb

1. Lub Tsheb Hluav Taws Xob: Lub 12-nti SiC substrate (12-nti silicon carbide substrate) yog lub hauv paus tseem ceeb ntawm cov tshuab hluav taws xob txuas ntxiv mus, ua kom muaj txiaj ntsig zoo inverters uas txhim kho ntau yam thiab txo lub sijhawm them nyiaj.

2. 5G Base Stations: Loj-loj SiC substrates txhawb nqa cov khoom siv RF zaus, ua tau raws li qhov xav tau ntawm 5G hauv paus chaw nres tsheb rau lub zog siab thiab poob qis.

3.Industrial Power Supplies: Nyob rau hauv hnub ci inverters thiab cov phiajcim ntse, 12-nti substrate tuaj yeem tiv taus qhov hluav taws xob ntau dua thaum txo qis zog.

4.Consumer Electronics: Yav tom ntej ceev chargers thiab cov ntaub ntawv chaw fais fab khoom siv yuav siv 12-nti SiC substrates kom ua tau raws li qhov loj me thiab ua haujlwm zoo dua.

XKH's Services

Peb tshwj xeeb hauv kev pabcuam ua haujlwm rau 12-nti SiC substrates (12-nti silicon carbide substrates), suav nrog:
1. Dicing & Polishing: Tsawg-kev puas tsuaj, high-flatness substrate ua raws li cov neeg siv khoom xav tau, kom ntseeg tau tias cov cuab yeej ruaj khov.
2. Kev Txhawb Kev Loj Hlob Epitaxial: Cov kev pabcuam zoo epitaxial wafer kom ceev cov chips raug tsim.
3. Small-Batch Prototyping: Txhawb R & D validation rau kev tshawb fawb cov koom haum thiab kev lag luam, shortening txoj kev loj hlob mus.
4. Kev Pabcuam Kev Pabcuam: Cov kev daws teeb meem kawg-rau-kawg los ntawm kev xaiv cov khoom siv rau kev ua kom zoo dua qub, pab cov neeg siv khoom kov yeej SiC cov kev cov nyom.
Txawm hais tias yog rau kev tsim khoom loj lossis kev tsim tshwj xeeb, peb cov kev pabcuam 12-nti SiC substrate ua raws li koj qhov kev xav tau, txhawb kev ua haujlwm thev naus laus zis.