12 Nti Sic subicon carrime Prime qeb diam 300 hli loj loj 4H-n tsim nyog rau siab zog ntaus kub dissipation
Cov yam ntxwv khoom
1. Siab thermal conductivity: Lub thermal conductivity ntawm silicon carbide yog ntau dua 3 zaug uas ntawm silicon, uas haum rau siab zog ntaus kub kub dissipation.
2. Kev siab siab tawg teb lub zog: Lub zog tawg yog 10 zaug uas ntawm silicon, haum rau cov ntawv thov siab siab.
3.Tiamsis bandgap: bandgap yog 3.26ev (4H-SIC), haum rau cov kev siv kub siab thiab qib siab.
4. Lub Hardness Siab: Mohs Hardness yog 9.2, thib ob tsuas yog pob zeb diamond, zoo hnav tsis kam thiab kho tshuab zog.
5.
6. Loj loj: 12 nti (300 hli) substrate, txhim kho ntau lawm, txo tus nqi.
7.Low kho qhov tsis zoo: Zoo Siab Ib Leeg Crystal Kev Loj Hlob Technology los xyuas kom ntseeg tau qhov tsis zoo ntom ntom ntom thiab muaj kev sib xws.
Kev Siv Lub Ntsiab Lus Tseem Ceeb
1. Fais fab hluav taws xob:
Mosfets: siv hauv cov tsheb hluav taws xob, muaj lub cev muaj zog tsav tsheb thiab cov hluav taws xob hloov dua siab tshiab.
Dailes: Xws li Schottky Diodes (SBD), siv rau kev siv tau zoo thiab hloov cov khoom siv fais fab.
2. RF li:
RF lub zog hluav taws xob: siv hauv 5g kev sib txuas lus hauv paus thiab satellite sib txuas lus.
Microwave Devices: Haum rau Radar thiab wireless sib txuas lus.
3. Cov Tsheb Hluav Taws Xob:
Cov Hluav Taws Xob Tsav Hluav Taws Xob: Cov Khoom Siv Hluav Taws Xob thiab Cov Thawv Hluav Taws rau Cov Tsheb Hluav Taws Xob.
Them pawg: Fais module rau cov khoom siv ceev ceev.
4. Muaj cov ntawv thov:
High voltage inverter: rau kev tsim lub cev muaj zog tswj thiab hluav taws xob tswj hwm.
Cov kab sib chaws ntse: rau tus mob HVDC kis thiab lub zog hluav taws xob hloov khoom siv.
5. AERSOSPACE:
Kev kub siab hluav taws xob: haum rau cov khoom siv kub siab ntawm iberospace khoom.
6. Kev Tshawb Fawb:
Dav Bandgap Kev Tshawb Fawb Semiconductor: Rau kev txhim kho cov ntaub ntawv tshiab semiconductor thiab khoom siv.
Lub 12-nti Silicon Carbide substrate yog ib hom kev ua tau zoo semiconductor cov khoom siv nrog cov khoom muaj zog thiab sib txawv txuas pab laib. Nws yog dav siv nyob rau hauv lub zog hluav taws xob, cov xov tooj cua kom muaj zog, kev tswj hwm lub zog tshiab, thiab yog cov khoom tseem ceeb los txhawb kev txhim kho ntawm cov khoom siv hluav taws xob tom ntej ntawm cov khoom siv hluav taws xob tom ntej.
Thaum Silicon Carbide substrates tam sim no muaj tsawg dua kev siv hluav taws xob xws li kev ua haujlwm hluav taws xob zoo li cov kev daws teeb meem rau yav tom ntej ar / vr li. Tam sim no, kev loj hlob ntawm silicon carbide substrate yog feeb los hauv kev lag luam tsheb loj thiab kev txhawb nqa cov kev lag luam hauv lub zog tshiab los tsim kho cov kev taw qhia ntau dua thiab txhim khu kev qha.
XKH tau cog lus los muab cov txiaj ntsig zoo 12 "Sic substrates nrog cov kev pab txhawb nqa thiab cov kev pabcuam, suav nrog:
1. Mekas Ntau Lawm: Raws li cov neeg siv khoom yuav tsum muab ntau cov kev tiv thaiv sib txawv, cov kev qhia ua lead ua thiab kev kho deg.
2. Txheej Txheem Optimization: muab cov neeg siv khoom nrog kev txhim kho kev loj hlob ntawm kev loj tuaj, ntaus ntawv tsim thiab lwm cov txheej txheem los txhim kho cov khoom lag luam.
3. Kuaj thiab ntawv pov thawj: Muab cov kev nruj nruj ua kom pom tseeb thiab muaj ntawv pov thawj ua tiav los xyuas kom meej tias cov txheej txheem kev ua raws li cov qauv kev lag luam.
4.R & D kev koom tes: sib koom tes tsim tshiab Silicon Carbide cov khoom siv nrog cov neeg siv los txhawb thev naus laus zis thev naus laus zis.
Cov ntaub ntawv qhia cov ntaub ntawv
| 1 2 nti silicon carbide (sic) substrate specification | |||||
| Teem nqi | Zerompd ntau lawm Qib (Z qib) | Tus txheem ntau lawm Qib (P Qib) | DUMMY Qib (D Qib) | ||
| Qhov dav | 3 0 0 hli ~ 1305mm | ||||
| Qhov tuab | 4h-n | 750 kÄd ± 15 μm | 750 mX ± 25 μm | ||
| 4H-SI | 750 kÄd ± 15 μm | 750 mX ± 25 μm | |||
| Kev cia siab | Tawm Axis: 4.0 ° rau <1120> ° rau 4H-N, Rau Axis: <000 0.5 ° rau 4H-Si | ||||
| Lub micropipe ceev | 4h-n | I≤0.4CM-2 | ≤4CM-2 | I≤25CM-2 | |
| 4H-SI | A CENT5CM-2 | ≤10CM-2 | I≤25CM-2 | ||
| Resiveivity | 4h-n | 0.015 ~ 0.024 ω ω ω ω | 0.015 ~ 0.025 ω ω.. | ||
| 4H-SI | ≥1K00 ω10 ω 1 ω 1 ω 1 | ≥1. ω ω ω ω ω ω ≥ ≥ ≥ ≥ ≥ | |||
| Thawj kab ke kev cob qhia | {10-10} ± 5.0 ° | ||||
| Lub Neej Puab Tswb | 4h-n | N / a | |||
| 4H-SI | Nthuav tawm | ||||
| Ntug kev cais tawm | 3 hli | ||||
| Ltv / ttv / hneev / warp | ≤5μm / ≤35 μm / 50 μm | ≤5μsμμm / ≤ μm / ≤55 □ μm | |||
| Kev ntxhib | Polish ra≤1 nm | ||||
| CMP RAUT0.2 NM | Ra≤0.5 nm | ||||
| Ntug kab nrib pleb los ntawm kev siv lub teeb loj Hex daim hlau los ntawm kev siv lub teeb Polytype thaj chaw los ntawm kev siv lub teeb Visual Carbon Inclusions Silicon saum npoo khawb hlau los ntawm kev siv lub teeb | Tsis muaj Cumulative Cheeb Tsam ≤0.05% Tsis muaj Cumulative Cheeb Tsam ≤0.05% Tsis muaj | Cumulative ntev ≤ 20 hli, ib ntev ntev≤2 hli Cumulative Cheeb Tsam ≤0.1% Cumulative Cheeb Tsam ur3% Cumulative Cheeb Tsam ≤3% Cumulative ntev li dec1 × wafer taub | |||
| Ntug cov chips los ntawm kev siv lub teeb | Tsis muaj ib tus neeg tso cai ≥0.2mm dav thiab tob | 7 Cia, I≤1 hli txhua tus | |||
| (TSD) xov xwm zais ntsrocation | A≤500 CM-2 | N / a | |||
| (BPD) Base dav hlau dislocation | ≤1000 cm-2 | N / a | |||
| Silicon nto me me los ntawm kev siv lub teeb | Tsis muaj | ||||
| Ntim | Multi-Wafer Cassette lossis ib qho wafer thawv | ||||
| Sau ntawv: | |||||
| 1 tsis xws luag txwv rau tag nrho wafer deg tsuas yog cov ntug kev tshwj xeeb thaj chaw. 2Cov daim khawb yuav tsum tau kuaj ntawm si lub ntsej muag nkaus xwb. 3 Cov ntaub ntawv rho nyiaj tsuas yog los ntawm koh etched wafers. | |||||
XKH yuav txuas ntxiv kev nqis peev hauv kev tshawb fawb thiab kev nthuav dav los txhawb qhov kev sib tsoo ntawm 12-nti tawm tsam cov khoom siv hluav taws xob xws li cov khoom siv hluav taws xob ntau, xws li cov khoom siv hluav taws xob ntau, xws li cov khoom siv hluav taws xob ntau ntxiv rau AR / VR liquip) thiab Quanum suav. Los ntawm kev txo nqi thiab muaj peev xwm nce ntxiv, xkh yuav coj kev vam meej rau kev lag luam semiconductor.
Cov duab kos kom ntxaws
