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2 nti 50.8mm Sapphire Wafer C-Plane M-plane R-plane A-plane Thickness 350um 430um 500um

2 nti 50.8mm Sapphire Wafer C-Plane M-plane R-plane A-plane Thickness 350um 430um 500um Featured duab
  • 2 nti 50.8mm Sapphire Wafer C-Plane M-plane R-plane A-plane Thickness 350um 430um 500um
  • 2 nti 50.8mm Sapphire Wafer C-Plane M-plane R-plane A-plane Thickness 350um 430um 500um
  • 2 nti 50.8mm Sapphire Wafer C-Plane M-plane R-plane A-plane Thickness 350um 430um 500um

Lus piav qhia luv luv:

Sapphire yog cov khoom siv tshwj xeeb ntawm kev sib xyaw ntawm lub cev, tshuaj thiab kho qhov muag, uas ua rau nws tiv taus kub, thermal shock, dej thiab xuab zeb yaig, thiab khawb.


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Khoom cim npe

Specification ntawm txawv orientations

Kev taw qhia

C(0001)-Axis

R(1-102)-Axis

M(10-10) -Axis

A(11-20)-Axis
Lub cev muaj zog

Lub C axis muaj lub teeb ci siv lead ua, thiab lwm cov axes muaj lub teeb tsis zoo. Plane C yog tiaj, nyiam dua txiav.

R-dav hlau me ntsis nyuaj dua A.

 M dav hlau yog stepped serrated, tsis yooj yim rau txiav, yooj yim txiav. Lub hardness ntawm A-dav hlau yog ho siab dua li ntawm C-plane, uas yog manifested nyob rau hauv hnav tsis kam, khawb kuj thiab siab hardness; Sab A-dav hlau yog lub dav hlau zigzag, uas yooj yim txiav;
Daim ntawv thov

C-oriented sapphire substrates yog siv los loj hlob III-V thiab II-VI tso cov yeeb yaj kiab, xws li gallium nitride, uas tuaj yeem tsim cov khoom siv xiav LED, laser diodes, thiab daim ntawv thov infrared detector.
Qhov no feem ntau yog vim hais tias cov txheej txheem ntawm sapphire siv lead ua kev loj hlob raws C-axis yog mature, tus nqi kuj tsis tshua muaj, lub cev thiab tshuaj lom neeg muaj zog, thiab cov cuab yeej ntawm epitaxy ntawm C-dav hlau yog paub tab thiab ruaj khov.

R-oriented substrate kev loj hlob ntawm txawv deposited silicon extrasystals, siv nyob rau hauv microelectronics integrated circuits.
Tsis tas li ntawd, high-speed integrated circuits thiab siab sensors kuj tuaj yeem tsim nyob rau hauv cov txheej txheem ntawm kev tsim cov yeeb yaj kiab ntawm epitaxial silicon kev loj hlob. R-hom substrate kuj tseem siv tau rau hauv kev tsim cov hlau lead, lwm yam khoom siv superconducting, siab resistors, gallium arsenide.

 Nws yog tsuas yog siv los loj hlob tsis-polar / semi-polar GaN epitaxial films los txhim kho lub luminous efficiency. A-oriented rau lub substrate ua ib tug uniform permittivity / nruab nrab, thiab ib tug high degree ntawm rwb thaiv tsev yog siv nyob rau hauv hybrid microelectronics technology. Cov kub kub superconductors tuaj yeem tsim los ntawm A-puag elongated crystals.
Kev muaj peev xwm ua tau Qauv Sapphire Substrate (PSS): Nyob rau hauv daim ntawv ntawm Kev Loj Hlob lossis Etching, nanoscale tshwj xeeb microstructure qauv yog tsim thiab ua rau ntawm sapphire substrate los tswj lub teeb pom kev zoo ntawm LED, thiab txo qhov sib txawv ntawm GaN loj hlob ntawm sapphire substrate. , txhim kho lub epitaxy zoo, thiab txhim khu lub internal quantum efficiency ntawm lub LED thiab ua rau kom lub efficiency ntawm lub teeb extraction.
Tsis tas li ntawd, sapphire prism, daim iav, lens, qhov, lub khob hliav qab thiab lwm yam khoom siv tuaj yeem kho raws li cov neeg siv khoom xav tau.

Daim ntawv tshaj tawm

 Qhov ntom Hardness melt point Refractive index (pom thiab infrared) Kev xa tawm (DSP) Dielectric tsis tu ncua
3,98g 3 9 (hli) 2053 ℃ 1.762-1.770 Nws ≥85% 11.58 @ 300K ntawm C axis (9.4 ntawm A axis)

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