2 nti 6H-N Silicon Carbide Substrate Sic Wafer Ob Chav Polished Conductive Prime Qib Mos Qib

Lus piav qhia luv luv:

Lub 6H n-hom Silicon Carbide (SiC) ib leeg-crystal substrate yog ib qho tseem ceeb ntawm cov khoom siv semiconductor feem ntau siv hauv high-power, high-frequency, thiab high-temperature electronic applications. Renowned rau nws cov qauv siv lead ua hexagonal, 6H-N SiC muaj qhov dav bandgap thiab siab thermal conductivity, ua rau nws zoo tagnrho rau qhov xav tau ib puag ncig.
Cov khoom siv hluav taws xob tawg siab thiab kev txav hluav taws xob ua kom muaj kev txhim kho ntawm cov khoom siv hluav taws xob zoo, xws li MOSFETs thiab IGBTs, uas tuaj yeem ua haujlwm ntawm qhov kub thiab txias dua li cov khoom siv los ntawm silicon ib txwm muaj. Nws cov thermal conductivity zoo ua kom cov cua sov ua kom zoo, tseem ceeb rau kev tswj xyuas kev ua tau zoo thiab kev ntseeg siab hauv cov ntawv siv hluav taws xob siab.
Hauv kev siv xov tooj cua (RF), 6H-N SiC cov khoom txhawb nqa cov khoom siv uas muaj peev xwm ua haujlwm ntawm ntau zaus nrog kev ua haujlwm zoo dua qub. Nws cov tshuaj lom neeg ruaj khov thiab tsis kam tiv thaiv hluav taws xob kuj ua rau nws tsim nyog siv rau hauv qhov chaw hnyav, suav nrog aerospace thiab kev tiv thaiv sectors.
Tsis tas li ntawd, 6H-N SiC substrates yog ib qho tseem ceeb rau optoelectronic li, xws li ultraviolet photodetectors, qhov twg lawv qhov dav bandgap tso cai rau kom pom lub teeb pom kev zoo UV. Kev sib xyaw ua ke ntawm cov khoom no ua rau 6H n-hom SiC yog cov khoom siv ntau yam thiab tseem ceeb hauv kev nce qib hluav taws xob niaj hnub thiab optoelectronic technologies.

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Product Detail

Khoom cim npe

Cov hauv qab no yog cov yam ntxwv ntawm silicon carbide wafer:

· Khoom npe: SiC Substrate
· Hexagonal Structure: Cov khoom siv hluav taws xob tshwj xeeb.
· High Electron Mobility: ~ 600 cm²/V·s.
· Chemical Stability: Resistant rau corrosion.
· Radiation Resistance: Haum rau qhov chaw hnyav.
· Low Intrinsic Carrier Concentration: Ua haujlwm ntawm qhov kub thiab txias.
· Durability: Muaj zog mechanical zog.
· Optoelectronic Capability: Siv tau UV teeb pom kev zoo.

Silicon carbide wafer muaj ntau daim ntawv thov

SiC wafer daim ntawv thov:
SiC (Silicon Carbide) substrates yog siv rau hauv ntau yam kev ua haujlwm siab vim lawv cov khoom tshwj xeeb xws li thermal conductivity, siab hluav taws xob lub zog, thiab dav bandgap. Nov yog qee qhov kev siv:

1.Power Electronics:
· High-voltage MOSFETs
· IGBTs (Insulated Gate Bipolar Transistors)
· Schottky diodes
· Lub zog inverter

2.High-Frequency Devices:
· RF (Xov tooj cua zaus) amplifiers
· Microwave transistors
· millimeter-yoj cov khoom siv

3.High-kub Electronics:
· Sensors thiab circuits rau ib puag ncig hnyav
· Aerospace hluav taws xob
· Automotive electronics (piv txwv li, cav tswj units)

4. Optoelectronics:
· Ultraviolet (UV) photodetectors
· Lub teeb-emitting diodes (LEDs)
· Laser diodes

5.Renewable Energy Systems:
· Hnub ci inverter
· Cua turbine converters
· Hluav taws xob tsheb powertrains

6.Industrial thiab Defense:
· Radar systems
· Kev sib txuas lus satellite
· Nuclear reactor instrumentation

SiC wafer Customization

Peb tuaj yeem kho qhov loj ntawm SiC substrate kom tau raws li koj cov kev xav tau tshwj xeeb. Peb kuj muab 4H-Semi HPSI SiC wafer nrog qhov loj ntawm 10x10mm lossis 5x5mm.
Tus nqi yog txiav txim los ntawm rooj plaub, thiab cov ntsiab lus ntim tuaj yeem ua raws li koj nyiam.
Lub sij hawm xa tuaj yog nyob rau hauv 2-4 lub lis piam. Peb lees txais kev them nyiaj los ntawm T / T.
Peb lub Hoobkas muaj cov cuab yeej tsim khoom siab heev thiab pab pawg ua haujlwm, uas tuaj yeem hloov kho ntau yam tshwj xeeb, tuab thiab cov duab ntawm SiC wafer raws li cov neeg siv khoom tshwj xeeb.