2 nti SiC ingot Dia50.8mmx10mmt 4H-N monocrystal

Lus piav qhia luv luv:

Ib lub 2-nti SiC (silicon carbide) ingot yog hais txog lub cylindrical los yog thaiv-zoo li tus siv lead ua ntawm silicon carbide nrog ib txoj kab uas hla lossis ntug ntev ntawm 2 ntiv tes. Silicon carbide ingots yog siv los ua cov khoom pib rau kev tsim khoom ntawm ntau yam khoom siv semiconductor, xws li cov khoom siv hluav taws xob hluav taws xob thiab cov khoom siv hluav taws xob optoelectronic.


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SiC Crystal Growth Technology

Cov yam ntxwv ntawm SiC ua rau nws nyuaj rau loj hlob ib leeg muaju. Qhov no yog vim qhov tseeb tias tsis muaj cov kua theem nrog stoichiometric piv ntawm Si: C = 1: 1 ntawm atmospheric siab, thiab nws tsis tuaj yeem loj hlob SiC los ntawm txoj kev loj hlob ntau dua, xws li kev kos duab ncaj qha thiab txoj kev poob crucible, uas yog lub hauv paus ntawm kev lag luam semiconductor. Txoj kev xav, kev daws teeb meem nrog qhov sib piv stoichiometric ntawm Si: C = 1: 1 tuaj yeem tau txais thaum lub siab siab tshaj 10E5atm thiab qhov kub siab tshaj 3200 ℃. Tam sim no, cov txheej txheem tseem ceeb suav nrog PVT txoj kev, cov txheej txheem ua kua-theem, thiab cov txheej txheem kub-kub vapor-theem tshuaj deposition txoj kev.

SiC wafers thiab crystals peb muab yog tsuas yog loj hlob los ntawm lub cev vapor thauj (PVT), thiab cov hauv qab no yog ib tug luv luv qhia rau PVT:

Lub cev vapor thauj (PVT) txoj kev pib los ntawm cov txheej txheem roj-theem sublimation tsim los ntawm Lely hauv xyoo 1955, uas SiC hmoov tau muab tso rau hauv lub raj graphite thiab ua rau kub kub kom ua rau SiC hmoov decompose thiab sublimate, thiab tom qab ntawd cov graphite. raj yog txias cia, thiab cov roj decomposed-theem Cheebtsam ntawm SiC hmoov yog tso thiab crystallized li SiC crystals nyob rau hauv ib ncig ntawm lub graphite raj. Txawm hais tias txoj kev no yog qhov nyuaj kom tau txais qhov loj-loj SiC ib leeg muaju thiab cov txheej txheem tso rau hauv lub raj graphite yog qhov nyuaj rau kev tswj, nws muab cov tswv yim rau cov neeg tshawb fawb tom qab.

YM Tairov et al. Nyob rau hauv Russia qhia lub tswv yim ntawm noob siv lead ua rau lub hauv paus no, uas daws teeb meem ntawm uncontrolled siv lead ua duab thiab nucleation txoj hauj lwm ntawm SiC muaju. Cov kws tshawb fawb tom qab txuas ntxiv txhim kho thiab thaum kawg tau tsim txoj kev hloov pauv lub cev vapor (PVT) uas tau siv niaj hnub no.

Raws li qhov ntxov tshaj SiC siv lead ua txoj kev loj hlob, PVT yog tam sim no txoj kev loj hlob tseem ceeb tshaj plaws rau SiC crystals. Piv nrog rau lwm txoj hauv kev, txoj kev no muaj cov kev xav tau tsawg rau cov cuab yeej loj hlob, cov txheej txheem kev loj hlob yooj yim, muaj zog tswj, kev txhim kho thiab kev tshawb fawb, thiab twb tau ua lag luam.

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