3inch High purity Semi-Insulating (HPSI) SiC wafer 350um Dummy qib Prime qib

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Lub HPSI (High-Purity Silicon Carbide) SiC wafer, nrog ib tug 3-nti inch thiab ib tug tuab ntawm 350 µm ± 25 µm, yog engineered rau tej-edge fais electronics daim ntaub ntawv. SiC wafers muaj npe nrov rau lawv cov khoom tshwj xeeb, xws li thermal conductivity, high voltage kuj, thiab tsawg zog poob, uas ua rau lawv xaiv rau cov khoom siv hluav taws xob semiconductor. Cov wafers no yog tsim los tswj cov xwm txheej huab cua, muab kev txhim kho kev ua tau zoo nyob rau hauv high-frequency, high-voltage, thiab high-temperature ib puag ncig, tag nrho thaum ua kom muaj zog ntau dua thiab ua haujlwm ntev.

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HPSI SiC wafers yog qhov tseem ceeb hauv kev ua kom cov khoom siv hluav taws xob txuas ntxiv mus, uas yog siv ntau yam kev ua haujlwm siab:
Fais fab Hloov Systems: SiC wafers ua cov khoom tseem ceeb rau cov khoom siv hluav taws xob xws li lub zog MOSFETs, diodes, thiab IGBTs, uas yog qhov tseem ceeb rau kev hloov hluav taws xob zoo hauv hluav taws xob circuits. Cov khoom no muaj nyob rau hauv high-efficiency fais fab mov, lub cev muaj zog tsav, thiab industrial inverters.

Electric Vehicles (EVs):Qhov kev thov loj zuj zus rau lub tsheb hluav taws xob xav tau kev siv hluav taws xob hluav taws xob ntau dua, thiab SiC wafers yog qhov ua ntej ntawm qhov kev hloov pauv no. Hauv EV powertrains, cov wafers no muab kev ua haujlwm siab thiab muaj peev xwm hloov tau sai, uas ua rau lub sijhawm them nyiaj sai dua, ntev dua, thiab txhim kho tag nrho lub tsheb ua haujlwm.

Renewable Zog:Hauv cov tshuab hluav taws xob tauj dua tshiab xws li hnub ci thiab cua zog, SiC wafers yog siv rau hauv inverters thiab converters uas ua kom muaj zog ntau dua kev ntes thiab xa tawm. Lub siab thermal conductivity thiab superior tawg voltage ntawm SiC xyuas kom meej tias cov tshuab no muaj kev ntseeg siab, txawm tias nyob rau hauv ib puag ncig huab cua.

Industrial Automation thiab Robotics:Cov khoom siv hluav taws xob ua tau zoo hauv kev lag luam automation thiab cov neeg hlau xav tau cov cuab yeej muaj peev xwm hloov tau sai, tuav lub zog loj, thiab ua haujlwm hauv kev ntxhov siab. SiC-based semiconductors ua tau raws li cov kev cai no los ntawm kev muab kev ua haujlwm siab dua thiab muaj zog, txawm tias nyob rau hauv qhov chaw ua haujlwm hnyav.

Telecommunication Systems:Hauv kev sib txuas lus hauv kev sib txuas lus, qhov twg muaj kev ntseeg siab thiab kev hloov pauv hluav taws xob zoo yog qhov tseem ceeb, SiC wafers yog siv rau hauv cov khoom siv hluav taws xob thiab DC-DC converters. SiC cov cuab yeej pab txo qis kev siv hluav taws xob thiab txhim kho kev ua haujlwm hauv cov chaw khaws ntaub ntawv thiab kev sib txuas lus.

Los ntawm kev muab lub hauv paus ruaj khov rau kev siv hluav taws xob siab, HPSI SiC wafer ua rau kev txhim kho cov khoom siv hluav taws xob zoo, pab kev lag luam hloov mus rau ntsuab, ntau dua kev daws teeb meem.

Cov khoom

kev ua haujlwm	Qib ntau lawm	Qib tshawb fawb	Dummy Qib
Txoj kab uas hla	75.0 hli ± 0.5 hli	75.0 hli ± 0.5 hli	75.0 hli ± 0.5 hli
Thickness	350 µm ± 25 µm	350 µm ± 25 µm	350 µm ± 25 µm
Wafer Orientation	Ntawm axis: <0001> ± 0.5°	Ntawm axis: <0001> ± 2.0°	Ntawm axis: <0001> ± 2.0°
Micropipe Density rau 95% ntawm Wafers (MPD)	≤ 1 cm⁻²	≤ 5 cm⁻²	≤ 15 cm⁻²
Hluav taws xob Resistivity	≥ 1E7 Ω·cm	≥ 1E6 Ω·cm	≥ 1E5 Ω·cm
Dopant	Undoped	Undoped	Undoped
Thawj Txoj Kev Ncaj Ncees	{11-20} ± 5.0°	{11-20} ± 5.0°	{11-20} ± 5.0°
Qhov Loj Loj Loj	32.5 hli ± 3.0 hli	32.5 hli ± 3.0 hli	32.5 hli ± 3.0 hli
Secondary Flat Length	18.0 hli ± 2.0 hli	18.0 hli ± 2.0 hli	18.0 hli ± 2.0 hli
Secondary Flat Orientation	Si lub ntsej muag: 90 ° CW los ntawm thawj lub tiaj tus ± 5.0 °	Si lub ntsej muag: 90 ° CW los ntawm thawj lub tiaj tus ± 5.0 °	Si lub ntsej muag: 90 ° CW los ntawm thawj lub tiaj tus ± 5.0 °
Ntug Exclusion	3 hli	3 hli	3 hli
LTV/TTV/Bow/Warp	3 µm / 10 µm / ± 30 µm / 40 µm	3 µm / 10 µm / ± 30 µm / 40 µm	5 µm / 15 µm / ± 40 µm / 45 µm
Nto Roughness	C-lub ntsej muag: Polished, Si-face: CMP	C-lub ntsej muag: Polished, Si-face: CMP	C-lub ntsej muag: Polished, Si-face: CMP
Cracks (tshuaj xyuas los ntawm kev siv lub teeb siab)	Tsis muaj	Tsis muaj	Tsis muaj
Hex Phaj (kuaj los ntawm kev siv lub teeb siab)	Tsis muaj	Tsis muaj	Thaj tsam 10%
Polytype Areas (tshuaj xyuas los ntawm lub teeb ci siab)	Thaj tsam 5%	Thaj tsam 5%	Thaj tsam 10%
Scratches (tshuaj xyuas los ntawm kev siv lub teeb ci siab)	≤ 5 khawb, cumulative ntev ≤ 150 mm	≤ 10 khawb, cumulative ntev ≤ 200 mm	≤ 10 khawb, cumulative ntev ≤ 200 mm
Ntug Chiping	Tsis muaj kev tso cai ≥ 0.5 mm dav thiab qhov tob	2 tso cai, ≤ 1 mm dav thiab qhov tob	5 tso cai, ≤ 5 mm dav thiab qhov tob
Surface Contamination (tshuaj xyuas los ntawm lub teeb ci siab)	Tsis muaj	Tsis muaj	Tsis muaj

Qhov Zoo Tshaj Plaws

Superior Thermal Performance: SiC's high thermal conductivity kom ntseeg tau tias muaj cua sov dissipation hauv cov khoom siv hluav taws xob, tso cai rau lawv ua haujlwm ntawm lub zog siab dua thiab zaus yam tsis muaj cua sov. Qhov no txhais tau tias me me, ua haujlwm tau zoo dua thiab ua haujlwm ntev dua.

High Breakdown Voltage: Nrog rau qhov dav bandgap piv rau silicon, SiC wafers txhawb cov kev siv hluav taws xob siab, ua rau lawv zoo tagnrho rau cov khoom siv hluav taws xob hluav taws xob uas xav tau los tiv thaiv cov hluav taws xob tawg, xws li hauv tsheb hluav taws xob, kab hluav taws xob hluav taws xob, thiab hluav taws xob txuas ntxiv mus.

Txo lub zog poob: Qhov qis ntawm qhov tsis kam thiab hloov pauv ceev ntawm SiC cov cuab yeej ua rau txo qis zog thaum lub sijhawm ua haujlwm. Qhov no tsis tsuas yog txhim kho kev ua tau zoo tab sis kuj tseem txhim kho kev txuag hluav taws xob tag nrho ntawm cov tshuab uas lawv tau siv.
Txhim khu kev ntseeg siab nyob rau hauv ib puag ncig hnyav: SiC cov khoom siv muaj zog tso cai rau nws ua haujlwm nyob rau hauv huab cua txias, xws li kub siab (txog 600 ° C), high voltages, thiab high zaus. Qhov no ua rau SiC wafers tsim nyog rau kev thov kev lag luam, tsheb, thiab kev siv hluav taws xob.

Zog Efficiency: SiC cov cuab yeej muab lub zog siab dua li cov khoom siv silicon-based, txo qhov loj thiab qhov hnyav ntawm lub zog hluav taws xob thaum txhim kho lawv cov kev ua tau zoo tag nrho. Qhov no ua rau kev txuag nqi thiab ib puag ncig me me hauv kev siv xws li lub zog tauj dua tshiab thiab hluav taws xob tsheb.

Scalability: 3-nti inch thiab precision manufacturing tolerances ntawm HPSI SiC wafer xyuas kom meej tias nws yog scalable rau huab hwm coj ntau lawm, ua tau raws li ob qho tib si kev tshawb fawb thiab kev lag luam raug cai.

Xaus

HPSI SiC wafer, nrog nws txoj kab uas hla 3-nti thiab 350 µm ± 25 µm thickness, yog cov khoom siv zoo tshaj plaws rau tiam tom ntej ntawm cov khoom siv hluav taws xob ua haujlwm siab. Nws qhov tshwj xeeb ua ke ntawm thermal conductivity, siab tawg voltage, tsis tshua muaj zog poob, thiab kev ntseeg siab nyob rau hauv huab cua ua rau nws yog ib qho tseem ceeb ntawm cov khoom siv rau ntau yam kev siv hluav taws xob hloov dua siab tshiab, lub zog tauj dua tshiab, hluav taws xob tsheb, kev lag luam, thiab kev sib txuas lus.

Qhov SiC wafer no tshwj xeeb tshaj yog haum rau kev lag luam nrhiav kom ua tau zoo dua, txuag hluav taws xob ntau dua, thiab txhim kho kev ntseeg tau. Raws li lub zog hluav taws xob tshuab hluav taws xob txuas ntxiv mus, HPSI SiC wafer muab lub hauv paus rau kev txhim kho cov tiam tom ntej, cov kev daws teeb meem siv hluav taws xob, tsav kev hloov mus rau kev hloov pauv mus rau yav tom ntej kom muaj kev ruaj ntseg, cov pa roj carbon tsawg.