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4H-N 8 nti SiC substrate wafer Silicon Carbide Dummy Tshawb fawb qib 500um thickness

4H-N 8 nti SiC substrate wafer Silicon Carbide Dummy Tshawb fawb qib 500um thickness Featured duab
  • 4H-N 8 nti SiC substrate wafer Silicon Carbide Dummy Tshawb fawb qib 500um thickness
  • 4H-N 8 nti SiC substrate wafer Silicon Carbide Dummy Tshawb fawb qib 500um thickness

Lus piav qhia luv luv:

Silicon carbide wafers tau siv hauv cov khoom siv hluav taws xob xws li lub zog diodes, MOSFETs, cov khoom siv hluav taws xob microwave siab, thiab RF transistors, ua kom muaj zog hloov pauv thiab kev tswj fais fab. SiC wafers thiab substrates kuj pom siv nyob rau hauv automotive electronics, aerospace systems, thiab renewable zog technologies.


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Khoom cim npe

Yuav Ua Li Cas Koj Xaiv Silicon Carbide Wafers & SiC Substrates?

Thaum xaiv silicon carbide (SiC) wafers thiab substrates, muaj ntau yam los xav txog. Nov yog qee yam tseem ceeb:

Hom Khoom: Txiav txim siab hom SiC cov khoom uas haum rau koj daim ntawv thov, xws li 4H-SiC lossis 6H-SiC. Cov qauv siv lead ua feem ntau yog 4H-SiC.

Doping Hom: Txiav txim siab seb koj puas xav tau ib qho doped lossis undoped SiC substrate. Cov hom doping feem ntau yog N-hom (n-doped) lossis P-hom (p-doped), nyob ntawm koj qhov kev xav tau tshwj xeeb.

Crystal Quality: Ntsuas cov khoom siv lead ua zoo ntawm SiC wafers lossis substrates. Qhov xav tau zoo yog txiav txim siab los ntawm qhov tsis xws li tus naj npawb ntawm qhov tsis xws luag, crystallographic orientation, thiab nto roughness.

Wafer Diameter: Xaiv qhov wafer loj raws li koj daim ntawv thov. Qhov ntau thiab tsawg muaj xws li 2 nti, 3 nti, 4 nti, thiab 6 nti. Qhov loj ntawm txoj kab uas hla, qhov ntau yield koj tuaj yeem tau txais ib wafer.

Thickness: Xav txog qhov xav tau thickness ntawm SiC wafers lossis substrates. Cov kev xaiv tuab tuab li ntawm ob peb micrometers mus rau ntau pua micrometers.

Kev taw qhia: Txiav txim siab qhov kev taw qhia crystallographic uas haum rau koj daim ntawv thov cov cai. Cov kev taw qhia muaj xws li (0001) rau 4H-SiC thiab (0001) lossis (0001̅) rau 6H-SiC.

Surface Finish: Ntsuas qhov ua tiav ntawm SiC wafers lossis substrates. Qhov saum npoo yuav tsum du, polished, thiab tsis muaj khawb los yog kab mob.

Tus neeg muab khoom lub npe hu ua: Xaiv ib tus neeg muag khoom muaj npe nrov nrog kev paub dhau los hauv kev tsim cov khoom zoo SiC wafers thiab substrates. Xav txog yam xws li kev tsim muaj peev xwm, kev tswj kom zoo, thiab kev txheeb xyuas cov neeg siv khoom.

Tus nqi: Xav txog qhov cuam tshuam rau tus nqi, suav nrog tus nqi ntawm wafer lossis substrate thiab lwm yam kev siv nyiaj ntxiv.

Nws yog ib qho tseem ceeb kom ua tib zoo soj ntsuam cov xwm txheej no thiab sab laj nrog cov kws tshaj lij hauv kev lag luam lossis cov neeg muag khoom kom ntseeg tau tias SiC wafers thiab substrates tau xaiv raws li koj qhov kev thov tshwj xeeb.

Daim duab qhia ntxaws

4H-N 8 nti SiC substrate wafer Silicon Carbide Dummy Tshawb fawb qib 500um thickness (1)
4H-N 8 nti SiC substrate wafer Silicon Carbide Dummy Tshawb fawb qib 500um thickness (2)
4H-N 8 nti SiC substrate wafer Silicon Carbide Dummy Tshawb fawb qib 500um thickness (3)
4H-N 8 nti SiC substrate wafer Silicon Carbide Dummy Tshawb fawb qib 500um thickness (4)
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  • Tom ntej:
    • Sau koj cov lus ntawm no thiab xa tuaj rau peb

    Cov khoom qeb

    Ntaus nkag mus tshawb lossis ESC kom kaw