4H-semi HPSI 2inch SiC substrate wafer Ntau Lawm Dummy Kev Tshawb Fawb Qib

Silicon carbide substrate feem ntau yog muab faib ua conductive thiab semi-insulating hom, conductive silicon carbide substrate rau n-hom substrate yog tsuas yog siv rau epitaxial GaN-raws li LED thiab lwm yam optoelectronic li, SiC-raws li lub hwj chim electronics, thiab lwm yam., thiab semi- insulating SiC silicon carbide substrate yog tsuas yog siv rau epitaxial tsim ntawm GaN high-power xov tooj cua zaus li. Nyob rau hauv tas li ntawd, high-purity ib nrab rwb thaiv tsev HPSI thiab SI ib nrab rwb thaiv tsev yog txawv, high-purity ib nrab rwb thaiv tsev cab kuj concentration ntawm 3.5 * 1013 ~ 8 * 1015 / cm3 ntau, nrog high electron txav; semi-rwb thaiv tsev yog cov ntaub ntawv ua haujlwm siab, tiv taus siab heev, feem ntau yog siv rau cov khoom siv microwave substrates, tsis yog conductive.

Semi-insulating Silicon Carbide substrate ntawv SiC wafer

SiC siv lead ua qauv txiav txim siab nws lub cev, txheeb ze rau Si thiab GaAs, SiC muaj rau lub cev; txwv tsis pub band dav yog loj, ze rau 3 npaug ntawm Si, kom ntseeg tau tias cov cuab yeej ua haujlwm ntawm qhov kub thiab txias nyob rau hauv lub sij hawm ntev kev cia siab; tawg teb lub zog yog siab, yog 1O zaus ntawm Si, kom ntseeg tau tias cov cuab yeej voltage muaj peev xwm, txhim kho cov cuab yeej voltage nqi; saturation electron tus nqi yog loj, yog 2 npaug ntawm Si, kom cov cuab yeej zaus thiab lub zog ceev; thermal conductivity siab, ntau dua Si, thermal conductivity siab, thermal conductivity siab, thermal conductivity siab, thermal conductivity siab, ntau dua Si, thermal conductivity siab, thermal conductivity siab. High thermal conductivity, ntau dua 3 npaug ntawm Si, ua rau kom muaj peev xwm ua kom sov ntawm lub cuab yeej thiab ua kom paub txog cov khoom siv me me.