4H / 6H-P 6inch SiC wafer Zero MPD Qib Ntau Lawm Qib Dummy Qib

4H / 6H-P 6inch SiC wafer Zero MPD qib Qhuav Qib Dummy Qib Featured duab

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4H / 6H-P hom 6-nti SiC wafer yog cov khoom siv semiconductor siv hauv kev tsim khoom siv hluav taws xob, paub txog nws cov thermal conductivity zoo heev, siab tawg hluav taws xob, thiab tiv taus kub thiab corrosion. Qib ntau lawm thiab Zero MPD (Micro Pipe Defect) qib kom nws ntseeg tau thiab ruaj khov hauv cov khoom siv hluav taws xob ua haujlwm siab. Qib wafers ntau lawm yog siv rau kev tsim khoom loj nrog kev tswj xyuas nruj, thaum dummy-qib wafers feem ntau yog siv rau cov txheej txheem debugging thiab cov khoom siv kuaj. Cov khoom zoo ntawm SiC ua rau nws siv dav hauv qhov kub thiab txias, high-voltage, thiab high-frequency electronic devices, xws li cov khoom siv hluav taws xob thiab RF.

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4H/6H-P Hom SiC Composite Substrates Common parameter table

6 inch diameter Silicon Carbide (SiC) Substrate Specification

Qib			Zero MPD ProductionQib (Z Qib)	Txheem ntau lawmQib (P Qib)	Dummy Qib (D Qib)
Txoj kab uas hla			145.5mm ~ 150.0 hli
Thickness			350 μm ± 25 μm
Wafer Orientation			-Offaxis: 2.0 ° -4.0 ° rau [1120] ± 0.5 ° rau 4H / 6H-P, On axis: 〈111〉 ± 0.5 ° rau 3C-N
Micropipe ntom ntom			0 cm-2
Kev tiv thaiv	p-type 4H/6H-P		≤0.1 Ωꞏcm		≤0.3 Ωꞏcm
	N-type 3C-N		≤ 0.8 mΩ ꞏcm		≤1m Ωꞏcm
Thawj Txoj Kev Ncaj Ncees		4H/6H-P	-{1010} ± 5.0°
		3 C-N	-{110} ± 5.0°
Qhov Loj Loj Loj			32.5 hli ± 2.0 hli
Secondary Flat Length			18.0 hli ± 2.0 hli
Secondary Flat Orientation			Silicon lub ntsej muag: 90 ° CW. los ntawm Prime tiaj tus ± 5.0 °
Ntug Exclusion			3 hli		6 hli
LTV/TTV/How/Warp			≤ 2.5 μm / ≤5 μm / ≤ 15 μm / ≤ 30 μm		≤ 10 μm / ≤ 15 μm / ≤ 25 μm / ≤ 40 μm
Roughness			Polish Ra≤1nm
			CMP Ra≤0.2nm		Ra≤0.5nm
Ntug Cracks Los ntawm High Intensity Light			Tsis muaj		Qhov ntev ≤ 10 hli, ib qhov ntev ≤ 2 hli
Hex Phaj Los Ntawm Lub Teeb Siab Siab			Thaj tsam ≤ 0.05%		Cov cheeb tsam sib sau ≤0.1%
Polytype Areas Los Ntawm Lub Teeb Siab Siab			Tsis muaj		Thaj tsam ≤ 3%
Visual Carbon suav nrog			Thaj tsam ≤ 0.05%		Qhov loj me ≤ 3%
Silicon Surface Scratches Los ntawm High Intensity Light			Tsis muaj		Qhov ntev ≤1 × wafer txoj kab uas hla
Ntug Chips Siab Los Ntawm Kev Siv Lub Teeb			Tsis muaj kev tso cai ≥0.2mm dav thiab qhov tob		5 tso cai, ≤1mm txhua
Silicon Surface Contamination Los Ntawm Kev Siv Siab			Tsis muaj
Ntim			Multi-wafer Cassette lossis Ib Lub Thawv Wafer

Nco tseg:

※ Cov kev txwv tsis raug siv rau tag nrho wafer nto tsuas yog rau thaj tsam ntawm ntug kev cais tawm. # Cov khawb yuav tsum tau kuaj xyuas ntawm Si ntsej muag o

4H / 6H-P hom 6-nti SiC wafer nrog Zero MPD qib thiab ntau lawm lossis qib dummy yog siv dav hauv kev siv hluav taws xob siab heev. Nws zoo heev thermal conductivity, siab tawg voltage, thiab tsis kam mus rau hnyav ib puag ncig ua rau nws zoo tagnrho rau lub hwj chim electronics, xws li high-voltage keyboards thiab inverters. Qib Zero MPD ua kom muaj qhov tsis xws luag, tseem ceeb rau cov khoom siv muaj kev ntseeg siab. Cov wafers qib ntau lawm yog siv rau hauv kev tsim khoom loj ntawm cov khoom siv hluav taws xob thiab RF daim ntawv thov, qhov kev ua tau zoo thiab qhov tseeb yog qhov tseem ceeb. Dummy-qib wafers, ntawm qhov tod tes, yog siv rau cov txheej txheem calibration, kuaj cov cuab yeej, thiab prototyping, ua kom muaj kev tswj xyuas zoo nyob rau hauv ib puag ncig tsim khoom semiconductor.

Qhov zoo ntawm N-hom SiC composite substrates suav nrog

High Thermal conductivity: Lub 4H / 6H-P SiC wafer zoo dissipates cua sov, ua rau nws haum rau high-temperature thiab high-power electronic applications.
High Breakdown Voltage: Nws lub peev xwm los tswj cov hluav taws xob siab tsis ua haujlwm ua rau nws zoo tagnrho rau kev siv hluav taws xob hluav taws xob thiab kev siv hluav taws xob hloov hluav taws xob.
Zero MPD (Micro Pipe Defect) Qib: Tsawg qhov tsis xws luag ua kom muaj kev ntseeg siab dua thiab ua haujlwm tau zoo, tseem ceeb rau kev xav tau cov khoom siv hluav taws xob.
Qhuav-qib rau pawg Manufacturing: Haum rau kev tsim khoom loj ntawm cov khoom siv semiconductor nrog cov qauv nruj nruj.
Dummy-Qib rau Kev Ntsuas thiab Kev Ntsuas: Ua kom cov txheej txheem ua kom zoo dua qub, ntsuas cov cuab yeej siv, thiab kev tsim qauv yam tsis siv cov khoom siv hluav taws xob ntau-qib wafers.

Zuag qhia tag nrho, 4H / 6H-P 6-nti SiC wafers nrog Zero MPD qib, qib ntau lawm, thiab qib dummy muaj txiaj ntsig zoo rau kev txhim kho cov khoom siv hluav taws xob ua tau zoo. Cov wafers no tau txais txiaj ntsig tshwj xeeb hauv cov ntawv thov uas yuav tsum tau ua haujlwm kub, muaj zog ceev ceev, thiab hloov hluav taws xob zoo. Zero MPD qib ua kom muaj qhov tsis xws luag rau kev ua haujlwm ruaj khov thiab ruaj khov, thaum cov qib qib wafers txhawb kev tsim khoom loj nrog kev tswj xyuas nruj. Dummy-qib wafers muab cov kev daws teeb meem zoo rau cov txheej txheem optimization thiab cov cuab yeej calibration, ua rau lawv indispensable rau high-precision semiconductor fabrication.