4inch 6inch 8inch SiC Crystal Growth Rauv rau CVD txheej txheem

Lus piav qhia luv luv:

XKH's SiC Crystal Growth Rauv CVD Chemical Vapor Deposition system siv lub ntiaj teb ua cov tshuaj vapor deposition thev naus laus zis, tshwj xeeb tsim los rau SiC ib qho kev loj hlob zoo. Los ntawm kev tswj hwm cov txheej txheem tsis suav nrog cov roj ntws, qhov kub thiab txias, nws ua kom tswj tau SiC siv lead ua kev loj hlob ntawm 4-8 nti substrates. Qhov CVD no tuaj yeem tsim ntau hom SiC siv lead ua suav nrog 4H / 6H-N hom thiab 4H / 6H-SEMI insulating hom, muab cov kev daws teeb meem los ntawm cov khoom siv rau cov txheej txheem. Lub kaw lus txhawb nqa kev loj hlob ntawm 2-12 nti wafers, ua rau nws tshwj xeeb tshaj yog tsim rau kev tsim hluav taws xob hluav taws xob thiab RF.

Xa email rau peb

Nta

Txoj Cai Ua Haujlwm

Lub hauv paus ntsiab lus tseem ceeb ntawm peb cov CVD muaj xws li thermal decomposition ntawm silicon-muaj (piv txwv li, SiH4) thiab carbon-muaj (piv txwv li, C3H8) precursor gases ntawm qhov kub thiab txias (feem ntau 1500-2000 ° C), tso SiC ib qho crystals ntawm substrates los ntawm roj-theem tshuaj tiv thaiv. Cov tshuab no yog tshwj xeeb tshaj yog tsim rau kev ua kom muaj siab dawb huv (> 99.9995%) 4H / 6H-SiC ib leeg muaju uas tsis muaj qhov tsis xws luag (<1000 / cm²), ua tau raws li cov khoom siv nruj rau cov khoom siv hluav taws xob thiab RF. Los ntawm kev tswj cov roj muaj pes tsawg leeg, tus nqi ntws thiab qhov kub thiab txias, lub kaw lus ua kom muaj kev tswj hwm ntawm cov siv lead ua conductivity hom (N / P hom) thiab tiv taus.

System Hom thiab Technical Parameters

System Hom	Qhov kub thiab txias	Cov yam ntxwv tseem ceeb	Daim ntawv thov
High-Temp CVD	1500-2300 ° C	Graphite induction cua sov, ± 5 ° C kub uniformity	Bulk SiC siv lead ua kev loj hlob
Kub-filament CVD	800-1400 ° C	Tungsten filament cua sov, 10-50μm / h deposition tus nqi	SiC tuab epitaxy
VPE CVD	1200-1800 ° C	Ntau cheeb tsam kub tswj,> 80% kev siv roj	Loj epi-wafer ntau lawm
PECVD	400-800 ° C	Plasma txhim kho, 1-10μm / h deposition tus nqi	Tsawg-temp SiC nyias zaj duab xis

Cov yam ntxwv tseem ceeb

1. Advanced Temperature Control System
Lub tshuab hluav taws xob muaj ntau thaj tsam tiv thaiv cua sov uas muaj peev xwm tswj tau qhov kub txog li 2300 ° C nrog ± 1 ° C uniformity thoob plaws tag nrho cov kev loj hlob chamber. Qhov no precision thermal tswj yog ua tiav los ntawm:
12 ntawm nws tus kheej tswj cov cua sov zones.
Kev saib xyuas cov thermocouple rov qab (Hom C W-Re).
Real-time thermal profile hloov algorithms.
Dej-txias chamber phab ntsa rau thermal gradient tswj.

2. Kev xa khoom roj thiab kev sib xyaw tshuab
Peb cov khoom siv hluav taws xob faib hluav taws xob ua kom ntseeg tau qhov kev pom zoo ua ntej sib xyaw thiab xa khoom sib xws:
Mass flow controllers nrog ± 0.05sccm raug.
Multi-point gas txhaj tshuaj manifold.
In-site gas composition monitoring (FTIR spectroscopy).
Tsis siv neeg txaus them nyiaj thaum lub sij hawm kev loj hlob.

3. Crystal Quality Enhancement
Lub kaw lus suav nrog ntau qhov kev tsim kho tshiab los txhim kho cov khoom siv lead ua kom zoo:
Rotating substrate yas dhos (0-100rpm programmable).
Advanced ciam txheej txheej tswj technology.
In-situ defect saib xyuas qhov system (UV laser scattering).
Tsis siv neeg kev nyuaj siab them nyiaj thaum loj hlob.

4. Txheej txheem Automation thiab tswj
Fully automated daim ntawv qhia ua tiav.
Real-time kev loj hlob parameter optimization AI.
Tej thaj chaw deb saib xyuas thiab kuaj mob.
1000+ parameter cov ntaub ntawv logging (tso rau 5 xyoos).

5. Cov yam ntxwv ntawm kev nyab xeeb thiab kev ntseeg siab
Triple-redundant over-temperature tiv thaiv.
Tsis siv neeg ceev ceev tshem tawm qhov system.
Seismic-rated structural tsim.
98.5% uptime guarantee.

6. Scalable Architecture
Modular tsim tso cai rau kev hloov kho lub peev xwm.
Tau tshaj 100mm txog 200mm wafer qhov ntau thiab tsawg.
Txhawb nqa ob qho tib si ntsug thiab kab rov tav configurations.
Ceev-hloov Cheebtsam rau kev tu.

7. Kev Siv Hluav Taws Xob
30% kev siv hluav taws xob qis dua li qhov sib piv.
Thaum tshav kub kub rov qab system captures 60% ntawm pov tseg tshav kub.
Optimized gas noj algorithms.
LEED-raws li qhov yuav tsum tau muaj.

8. Khoom siv ntau yam
Loj hlob txhua yam loj SiC polytypes (4H, 6H, 3C).
Txhawb ob qho tib si conductive thiab semi-insulating variants.
Ua raws li ntau yam kev siv tshuaj doping (N-hom, P-hom).
Tau tshaj lwm cov precursors (piv txwv li, TMS, TES).

9. Lub tshuab nqus tsev ua haujlwm
Lub hauv paus siab: <1 × 10⁻⁶ Torr
Tus nqi ntws: <1 × 10⁻⁹ Torr·L/sec
Pumping ceev: 5000L / s (rau SiH₄)

Tsis siv neeg siab tswj thaum lub sij hawm kev loj hlob
Qhov kev qhia dav dav no qhia tau hais tias peb lub cev muaj peev xwm los tsim cov kev tshawb fawb-qib thiab kev tsim khoom-zoo SiC crystals nrog kev lag luam-kev sib luag thiab cov txiaj ntsig. Kev sib xyaw ua ke ntawm kev tswj xyuas qhov tseeb, kev saib xyuas siab heev, thiab kev ua haujlwm ruaj khov ua rau qhov CVD system yog qhov kev xaiv zoo tshaj plaws rau R & D thiab ntim cov ntawv thov hauv hluav taws xob hluav taws xob, RF khoom siv, thiab lwm yam kev siv semiconductor siab heev.

Qhov Zoo Tshaj Plaws

1. High-Quality Crystal loj hlob
• Tsis muaj qhov ceev tsawg li <1000/cm² (4H-SiC)
• Doping uniformity <5% (6-nti wafers)
• Crystal purity> 99.9995%

2. Loj-loj ntau lawm muaj peev xwm
• Txhawb nqa txog li 8-nti wafer loj hlob
• Diameter uniformity> 99%
• Thickness variation < ± 2%

3. Precise Process Control
• Kev tswj qhov kub thiab txias ± 1 ° C
• Gas ntws tswj qhov tseeb ± 0.1sccm
• Kev tswj xyuas qhov tseeb ± 0.1Torr

4. Kev Siv Hluav Taws Xob
• 30% siv zog ntau dua li cov qauv siv
• Kev loj hlob mus txog 50-200μm / h
• Cov khoom siv sijhawm ua haujlwm> 95%

Cov ntawv thov tseem ceeb

1. Cov khoom siv hluav taws xob fais fab
6-nti 4H-SiC substrates rau 1200V + MOSFETs / diodes, txo kev hloov pauv los ntawm 50%.

2. 5G Kev sib txuas lus
Semi-insulating SiC substrates (resistivity> 10⁸Ω·cm) rau lub hauv paus chaw nres tsheb PAs, nrog rau qhov poob <0.3dB ntawm> 10GHz.

3. Lub Tsheb Hluav Taws Xob Tshiab
Automotive-qib SiC fais fab modules txuas EV ntau yam los ntawm 5-8% thiab txo lub sijhawm them los ntawm 30%.

4. PV Inverters
Low-defect substrates boost conversion efficiency tshaj 99% thaum txo qhov system loj los ntawm 40%.

XKH's Services

1. Kev Pabcuam Customization
4-8 nti CVD tshuab.
Txhawb kev loj hlob ntawm 4H / 6H-N hom, 4H / 6H-SEMI insulating hom, thiab lwm yam.

2. Kev pab txhawb nqa
Kev cob qhia dav dav ntawm kev ua haujlwm thiab kev ua kom zoo tshaj plaws.
24/7 technical teb.

3. Turnkey Solutions
Cov kev pabcuam kawg-rau-kawg los ntawm kev teeb tsa mus rau txheej txheem validation.

4. Khoom siv
2-12 nti SiC substrates/epi-wafers muaj.
Txhawb 4H / 6H / 3C polytypes.

Cov kev sib txawv tseem ceeb muaj xws li:
Txog li 8-nti siv lead ua kev loj hlob muaj peev xwm.
20% kev loj hlob sai dua li kev lag luam nruab nrab.
98% kev ntseeg tau.
Tag nrho cov ntse tswj system pob.