4inch SiC Epi wafer rau MOS lossis SBD

Epitaxy yog hais txog kev loj hlob ntawm ib txheej ntawm cov khoom siv lead ua zoo dua rau ntawm qhov chaw ntawm silicon carbide substrate. Ntawm lawv, kev loj hlob ntawm gallium nitride epitaxial txheej ntawm ib semi-insulating silicon carbide substrate yog hu ua heterogeneous epitaxy; Txoj kev loj hlob ntawm silicon carbide epitaxial txheej ntawm ib tug conductive silicon carbide substrate yog hu ua homogeneous epitaxy.

Epitaxial yog raws li cov cuab yeej tsim cov kev cai ntawm kev loj hlob ntawm cov txheej txheem tseem ceeb, feem ntau txiav txim siab txog kev ua haujlwm ntawm cov nti thiab cov cuab yeej, tus nqi ntawm 23%. Cov txheej txheem tseem ceeb ntawm SiC nyias zaj duab xis epitaxy nyob rau theem no suav nrog: tshuaj vapor deposition (CVD), molecular beam epitaxy (MBE), kua theem epitaxy (LPE), thiab pulsed laser deposition thiab sublimation (PLD).

Epitaxy yog qhov txuas tseem ceeb heev hauv kev lag luam tag nrho. Los ntawm kev loj hlob GaN epitaxial khaubncaws sab nraud povtseg ntawm semi-insulating silicon carbide substrates, GaN epitaxial wafers raws li silicon carbide yog tsim, uas yuav ua tau ntxiv rau hauv GaN RF li xws li high electron mobility transistors (HEMTs);

Los ntawm kev loj hlob silicon carbide epitaxial txheej ntawm conductive substrate kom tau silicon carbide epitaxial wafer, thiab nyob rau hauv lub epitaxial txheej ntawm kev tsim khoom ntawm Schottky diodes, kub-oxygen ib nrab-field nyhuv transistors, insulated rooj vag bipolar transistors thiab lwm yam khoom siv fais fab, yog li qhov zoo ntawm lub epitaxial ntawm kev ua tau zoo ntawm cov cuab yeej yog qhov cuam tshuam loj heev rau kev txhim kho kev lag luam kuj tseem ua lub luag haujlwm tseem ceeb heev.